VS-25F(R) Series

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Vishay Semiconductors
Standard Recovery Diodes
(Stud Version), 25 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Wide current range
• Types up to 1200 V VRRM
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-203AA (DO-4)
TYPICAL APPLICATIONS
• Battery charges
• Converters
PRODUCT SUMMARY • Power supplies
IF(AV) 25 A
• Machine tool controls
Package DO-203AA (DO-4)
Circuit configuration Single diode 


MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS
25 A
IF(AV)
TC 120 °C
IF(RMS) 40 A
50 Hz 356
IFSM A
60 Hz 373
50 Hz 636
I2t A2s
60 Hz 580
VRRM Range 100 to 1200 V
TJ - 65 to 175 °C

ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM VRSM, MAXIMUM VR(BR), MINIMUM
IRRM MAXIMUM
TYPE VOLTAGE REPETITIVE PEAK NON-REPETITIVE AVALANCHE
AT TJ = 175 °C
NUMBER CODE REVERSE VOLTAGE PEAK VOLTAGE VOLTAGE
mA
V V V (1)
10 100 150 -
20 200 275 -
40 400 500 500
VS-25F(R) 60 600 725 750 12
80 800 950 950
100 1000 1200 1150
120 1200 1400 1350
Note
(1) Avalanche version only available from V
RRM 400 V to 1200 V

Revision: 28-Jan-14 1 Document Number: 93506

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current  25 A
IF(AV) 180° conduction, half sine wave
at case temperature 120 °C
Maximum RMS forward current IF(RMS) 40 A
Maximum on-repetitive peak 
PR(1) 10 μs square pulse, TJ = TJ maximum 10 K/W
reverse power
t = 10 ms No voltage 356
Maximum peak, one-cycle forward, t = 8.3 ms reapplied 373
IFSM A
non-repetitive surge current t = 10 ms 100 % VRRM 300
t = 8.3 ms reapplied Sinusoidal half wave, 314
t = 10 ms No voltage initial TJ = TJ maximum 636
t = 8.3 ms reapplied 580
Maximum I2t for fusing I2t A2s
t = 10 ms 100 % VRRM 450
t = 8.3 ms reapplied 410
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 6360 A2s
Low level value of threshold voltage VF(TO)1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.80
V
High level value of threshold voltage VF(TO)2 (I >  x IF(AV)), TJ = TJ maximum 0.90
Low level value of forward 
rf1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 6.80
slope resistance
m
High level value of forward 
rf2 (I >  x IF(AV)), TJ = TJ maximum 5.70
slope resistance
Maximum forward voltage drop VFM Ipk = 78 A, TJ = 25 °C, tp = 400 μs rectangular wave 1.30 V
Note
(1) Available only for avalanche version, all other parameters the same as 25F

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
TJ - 65 to 175
temperature range
°C
Maximum storage temperature
TStg - 65 to 200
range
Maximum thermal resistance,
RthJC DC operation 1.5
junction to case
K/W
Maximum thermal resistance, 
RthCS Mounting surface, smooth, flat and greased 0.5
case to heatsink
1.5 + 0 - 10 % N·m
Not lubricated threads
(13) (lbf · in)
Allowable mounting torque
1.2 + 0 - 10 % N·m
Lubricated threads
(10) (lbf · in)
7 g
Approximate weight
0.25 oz.
Case style See dimensions - link at the end of datasheet DO-203AA (DO-4)

RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.28 0.24
120° 0.39 0.41
90° 0.50 0.54 TJ = TJ maximum K/W
60° 0.73 0.75
30° 1.20 1.21
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Revision: 28-Jan-14 2 Document Number: 93506

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-25F(R) Series
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180 180

Maximum Allowable Case Temperature (°C)

Maximum Allowable Case Temperature (°C)

25F(R) Series 25F(R) Series

170 RthJC (DC) = 1.5 K/W 170 RthJC (DC) = 1.5 K/W

160 160

150 150
Conduction Angle Conduction Period
140 140

130 130

120 120 90°

90°
110 60° 120° 110 60° 120°
30° 180° 30° 180° DC
100 100
0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 45

Average Forward Current (A) Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

35
Maximum Average Forward Power Loss (W)

180°

R th
3

2
120° K/

K/
30 W

SA
W
90° 4K

=1
/W
60°

K/
25

W
30°

-D
6K
/W

elt
20

aR
RMS Limit
8K
/W
15
12 K
/W
Conduction Angle
10 20 K/W
25F(R) Series
5 40 K/W
TJ = 175°C

0
0 5 10 15 20 25 30
0 25 50 75 100 125 150 175
Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 3 - Forward Power Loss Characteristics

25
Maximum Average Forward Power Loss (W)

DC R
th
180° SA
6K = 4K
20 120° /W /W
90° RMS Limit -D
elt
60° 8K aR
/W
30°
15 10 K
/W

15 K/W
10
Conduction Period 20 K/W

30 K/W
5 16F(R) Series
TJ = 175°C

0
0 5 10 15 20 25 30
0 25 50 75 100
Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 4 - Forward Power Loss Characteristics

Revision: 28-Jan-14 3 Document Number: 93506

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors

350 1000
Peak Half Sine Wave Forward Current (A)
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.

Instantaneous Forward Current (A)

300 Initial TJ = 175°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
250 100

TJ = 25°C
200

TJ = 175°C
150 10

100
25F(R) Series 25F(R) Series

50 1
1 10 100 0 0.5 1 1.5 2 2.5 3 3.5 4
Number Of Equal Amplitude Half Cycle Current Pulses (N) Instantaneous Forward Voltage (V)

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 7 - Forward Voltage Drop Characteristics

400 10
Peak Half Sine Wave Forward Current (A)

Maximum Non Repetitive Surge Current

Transient Thermal Impedance ZthJC (K/W)

Steady State Value
350 Versus Pulse Train Duration.
Initial TJ = 175°C RthJC = 1.5 K/W
No Voltage Reapplied (DC Operation)
300
Rated VRRM Reapplied
250

200 1

150

100
25F(R) Series
50 25F(R) Series

0 0.1
0.01 0.1 1 10 0.001 0.01 0.1 1 10
Pulse Train Duration (s) Square Wave Pulse Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 8 - Thermal Impedance ZthJC Characteristics

ORDERING INFORMATION TABLE

Device code VS- 25 F R 120 M

1 2 3 4 5 6

1 - Vishay Semiconductors product

2 - Current rating: Code = IF(AV)
3 - F = Standard device
4 - None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
5 - Voltage code x 10 = VRRM (see Voltage Ratings table)
6 - None = Stud base DO-203AA (DO-4) 10-32UNF-2A

M = Stud base DO-203AA (DO-4) M5 X 0.8

(not available for avalanche diodes)

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95311

Revision: 28-Jan-14 4 Document Number: 93506

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Outline Dimensions
Vishay Semiconductors

DO-203AA (DO-4)

DIMENSIONS in millimeters (inches)

3.30 (0.13) 0.8 ± 0.1

4.00 (0.16) (0.03 ± 0.004)
+ 0.3
2 0
+ 0.01
(0.08 0)

5.50 (0.22) MIN. R 0.40

Ø 1.80 ± 0.20 R (0.02)
(Ø 0.07 ± 0.01)

20.30 (0.80) MAX.

10.20 (0.40) Ø 6.8 (0.27)

MAX.
3.50 (0.14)

11.50 (0.45)
10.70 (0.42)

10/32" UNF-2A
For metric devices: M5 x 0.8

11 (0.43)

Document Number: 95311 For technical questions, contact: [email protected] www.vishay.com

Revision: 30-Jun-08 1
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Revision: 02-Oct-12 1 Document Number: 91000