HW#1

Q1/ For each question, answer T for true and F for false.

1. Normally every atom contains more electrons than protons.

2. Whenever an electron is removed from its orbit it is known as a free electron.
3. Electricity is commonly defined as the flow of free electrons through an insulator.
4. Copper is the metal most commonly used as an electric conductor.
5. Plastic is a common semiconductor material.
6. The two basic types of semiconductors are the n-type and the p-type.
7. A semiconductor diode passes current in one direction only.
8. The valence orbit controls the electrical properties of the atom.
9. At room temperature, a silicon crystal acts like an insulator.
10.Thermal energy produces free electrons and holes in pairs.
11.Thermal energy produces free electrons and holes in pairs.
12.Each pair of positive and negative ions at the pn junction is called a dipole.
13.Reverse bias is achieved when the negative source terminal is connected to the n-type
material, and the positive terminal is connected to the p-type material.
14.The sum of the ohmic resistances of a diode is called the ideal resistance.
15.An ideal diode acts like a switch that closes when forward-biased and opens when
reverse-biased.
16.A diode that measures extremely low resistance in both directions is called a leaky
diode.
17.Much of the information on a manufacturer's data sheet is obscure and of use only to
circuit designers.
18.Manufacturer's data sheets generally list the value of bulk resistance.
19.The dc resistance of a diode is the same as the bulk resistance.

Q2/ choose correct answer:

1. Which of the following can be classified as a semiconductor?

A. diode
B. transistor
C. integrated circuit chip
D. all of these
2. How many valence electrons are there in a germanium semiconductor?
A. 1
B. 2
C. 4
D. None
3. The particles that can be found within an atom are:
A. electrons and protons.
B. protons and neutrons.
C. neutrons, protons, and electrons.
D. electrons, molecules, and protons.
4. Tiny particles called ______ rotate in orbits around the nucleus of an atom.
A. electrons
B. neutrons
C. protons
D. all of these
5. The particles that can be found within the nucleus of an atom are:
A. electrons and protons.
B. protons and neutrons.
C. neutrons, protons, and electrons.
D. electrons, molecules, and protons.
6. A good conductor of electricity is:
A. wood.
B. plastic.
C. glass.
D. silver
7. When silicon atoms combine to form a solid, they arrange themselves into an orderly
pattern called:
A. an orbit.
B. the valence shell.
C. a crystal.
D. a conductor.
8. How many electrons are in the valence orbit of a silicon crystal?
A. 2
B. 4
C. 8
D. None
9. When the departure of an electron creates a vacancy in the valence orbit, it is called a
A. hole.
B. vacant electron.
C. polarized electron.
D. negative ion.
10. The amount of time between the creation and disappearance of a free electron is called
A. light year.
B. millisecond.
C. lifetime.
D. work week.
11. What type of impurity is added to pure silicon to get an excess of holes?
A. pentavalent
B. trivalent
C. covalent
D. positive
12.What is the most popular and useful semiconductor material?
A. silver
B. copper
C. aluminum
D. silicon
13. In an n-type semiconductor, the free electrons are called the
A. minority carriers. B. majority carriers.
C. holes. D. ions.
14.The border between p-type and n-type crystal is called the
A. pn junction.
B. p-type border.
C. n-type margin.
D. p junction.
15. When a free electron enters the p region of a junction diode, it becomes a
A. majority carrier.
B. minority carrier.
C. hole.
D. depletion carrier.
16. A silicon diode will allow a continuous current in the forward direction, if the source
voltage is
A. greater than 0.7V
B. equal to 7.7V
C. less than 0.7V
D. zero
17. When reverse bias is increased
A. forward current increases.
B. depletion layer widens.
C. depletion layer becomes smaller.
D. the diode becomes polarized.
18. The limit to how much reverse voltage a diode can withstand before it is destroyed is
called
A. forward bias.
B. reverse bias.
C. breakup current.
D. breakdown voltage.
19. A diode is a nonlinear device because the graph of its current versus voltage is
A. a straight line.
B. not a straight line.
C. inversely proportional to the resistance.
D. exponential.
20. In a diode, after the barrier potential is overcome, all that impedes the current is the
A. ohmic resistance of the p and n regions.
B. bulk resistance.
C. dynamic resistance of the p region.
D. depletion resistance.
21. If the current in a diode is too large
A. the load resistor will short.
B. excessive heat may destroy the diode.
C. the diode becomes an amplifier.
D. bulk resistance becomes smaller.
22. All silicon (Si) diodes have a knee voltage of approximately ________.
A. 0.7 V
B. 0.4 V
C. 1.4 V
D. 1.7 V
23.When a more accurate value for diode load current and load voltage is required,
A. the first approximation is used.
B. the second approximation is used.
C. Ohm's Law is used.
D. Thevenin's Theorem is used.
24. In the third approximation of a diode,
A. the depletion layer is ignored.
B. the ohmic resistance is ignored.
C. the bulk resistance is ignored if greater than 1.
D. the bulk resistance is included.
25. A diode can be effectively checked by using
A. an oscilloscope.
B. a frequency counter.
C. a spectrum analyzer.
D. an ohmmeter.
26. Most electronic troubleshooters begin by measuring
A. voltages out of the power supply.
B. resistances of the diodes.
C. power of the diodes.
D. current out of the power supply.
27. With regard to reverse breakdown voltage, conservative design engineers generally use a
safety factor of ________.
A. 2
B. 5
C. 10
D. 100
28. When graphing the diode, the greater the slope of the diode curve
A. the smaller the bulk resistance.
B. the greater the bulk resistance.
C. the smaller the forward current.
D. the lower the power dissipated.
29. The point of intersection which is called the Q point, represents
A. the intersection of the diode curve and the load line.
B. the intersection of cutoff and the diode voltage.
C. the intersection of saturation and diode current.
D. the intersection of cutoff and diode current.
30. The two most popular basic styles of surface-mount packages are surface mount and
A. small outline transistor.
B. large outline transistor.
C. surface outline diode.
D. surface outline transistor.
31. The knee voltage of a germanium (Ge) diode is approximately ________.
A. 0.7 V B. 0.3 V C. 1.7 V D. 1.3 V
32. The forward voltage of a gallium arsenide (GaAs) diode is approximately ________.
A. 0.9 V B. 0.3 V C. 1.2 V D. 1.9 V
Q3/ in accordance with figure (1)
a) calculate VD, VR,ID, IR, and PD(use 2nd Approximation)
b) use 3rd Approximation to calculate the lR, VR, PR, diode power, and total power, given RB
0.23Ω (use 3rd).
c) If the diode polarity is reversed, calculate ID and VD

Figure (1)

Q4/a silicon diode has a forward current of 500 mA at 1V, use 3rd approximation to calculate
bulk resistance.
Q5/ what should R2 be in figure (2) to set up a diode current of 0.25mA?

Figure (2)