1.

According to classical free electron theory,

(A) Electrons move around nucleus randomly

(B) Electrons move around nucleus in an orderly
fashion
(C) Electrons never move
(D) Concept of electron does not exist in classical free
electron theory.
1. According to classical free electron theory,

(A) Electrons move around nucleus randomly

(B) Electrons move around nucleus in an orderly
fashion
(C) Electrons never move
(D) Concept of electron does not exist in classical free
electron theory.
2. According to Drude-Lorentz theory of metals,

(A) Electrons follow quantum chromodynamics

(B) Electrons behaviors could be predicted by
quantum mechanics
(C) Electron velocities obeys the classical Maxwell –
Boltzmann distribution.
(D) Electrons move around randomly but do not follow
any particular law and its velocity can not be predicted.
2. According to Drude-Lorentz theory of metals,

(A) Electrons follow quantum chromodynamics

(B) Electrons behaviors could be predicted by
quantum mechanics
(C) Electron velocities obeys the classical Maxwell –
Boltzmann distribution.
(D) Electrons move around randomly but do not follow
any particular law and its velocity can not be predicted.
3. Wiedemann – Franz law gives us,

(A) Relationship between mass of an electron and its

charge
(B) Relationship between electrical conductivity and
thermal conductivity of a metal
(C) Distribution energy density of electrons in a
conductor
(D) None of the above
3. Wiedemann – Franz law gives us,

(A) Relationship between mass of an electron and its

charge
(B) Relationship between electrical conductivity and
thermal conductivity of a metal
(C) Distribution energy density of electrons in a
conductor
(D) None of the above
4. Mean free path is,

(A) Average distance travelled by an electron in a

minute inside a metal
(B) Average distance travelled by a free electron inside
a conductor before gets bound to a nucleus
(C) The average distance traveled by an electron
between two successive collisions inside a metal in
the presence of applied electric field
(D) None of the above
4. Mean free path is,

(A) Average distance travelled by an electron in a

minute inside a metal
(B) Average distance travelled by a free electron inside
a conductor before gets bound to a nucleus
(C) The average distance traveled by an electron
between two successive collisions inside a metal in
the presence of applied electric field
(D) None of the above
5. The time taken by the electron to reach
equilibrium position from its disturbed
position in the presence of an electric field is
called,

(A)Time of equilibrium
(B) Electro-striation time
(C) Field effect time
(D)Relaxation time
5. The time taken by the electron to reach
equilibrium position from its disturbed
position in the presence of an electric field is
called,

(A)Time of equilibrium
(B) Electro-striation time
(C) Field effect time
(D)Relaxation time
6. Drift velocity is,

(A) The maximum velocity attains by an electron in an

electric field inside a metal
(B) The velocity at which electron hit any nucleus of an
atom
(C) The average velocity of electrons in a metal in
presence of an electric field
(D) None of the above
6. Drift velocity is,

(A) The maximum velocity attains by an electron in an

electric field inside a metal
(B) The velocity at which electron hit any nucleus of an
atom
(C) The average velocity of electrons in a metal in
presence of an electric field
(D) None of the above
 7. The Expression of Effective mass is,
∗ ℏ
(A) 𝐦 = 𝐝𝟐 𝐄
𝐝𝐤 𝟐

∗ ℏ
(B) 𝐦 = − 𝐝𝟐𝐄
𝐝𝐤 𝟐

∗ ℏ𝟐 ∗ ℏ𝟐
(C) 𝒎 = 𝒅𝟐 𝑬
(D) 𝒎 = − 𝒅𝟐𝑬
𝒅𝒌𝟐 𝒅𝒌𝟐
 7. The Expression of Effective mass is,
∗ ℏ
(A) 𝐦 = 𝐝𝟐 𝐄
𝐝𝐤 𝟐

∗ ℏ
(B) 𝐦 = − 𝐝𝟐𝐄
𝐝𝐤 𝟐

∗ ℏ𝟐 ∗ ℏ𝟐
(C) 𝒎 = 𝒅𝟐 𝑬
(D) 𝒎 = − 𝒅𝟐𝑬
𝒅𝒌𝟐 𝒅𝒌𝟐
8. Resistivity of a conductor,

(A) Decreases with the increase of temperature

(B) Unaffected by the change in temperature

(C) Increases with the increase of temperature

(D) None of the above

8. Resistivity of a conductor,

(A) Decreases with the increase of temperature

(B) Unaffected by the change in temperature

(C) Increases with the increase of temperature

(D) None of the above

9. Conductivity of a semiconductor,

(A) Increases with the increase of temperature

(B) Decreases with the increase of temperature

(C) Remains unaffected

(D) None of the above

9. Conductivity of a semiconductor,

(A) Increases with the increase of temperature

(B) Decreases with the increase of temperature

(C) Remains unaffected

(D) None of the above

10. Insulator has the following property,

(A) Its Valence band is full

(B) Conduction band in almost empty

(C) It has a large forbidden band gap

(D) All of the above

10. Insulator has the following property,

(A) Its Valence band is full

(B) Conduction band in almost empty

(C) It has a large forbidden band gap

(D) All of the above

11. The current caused by the variation of
concentration of electron inside a metal is known
as,

(A) Drift Current

(B) Constant Current
(C) Carrier Current
(D) Diffusion Current
11. The current caused by the variation of
concentration of electron inside a metal is known
as,

(A) Drift Current

(B) Constant Current
(C) Carrier Current
(D) Diffusion Current
12. The direction of the drift current in an n-type
semiconductor under the influence of an electric field
is,

(A) Same as the direction of electric field

(B) Opposite to the direction of the electric field

(C) Perpendicular to the direction of the electric field

(D) There is no current in such a case

12. The direction of the drift current in an n-type
semiconductor under the influence of an electric field
is,

(A) Same as the direction of electric field

(B) Opposite to the direction of the electric field

(C) Perpendicular to the direction of the electric field

(D) There is no current in such a case

13. According to Fermi Dirac statistics, the probability of
electron occupation in an energy level E is given by,

𝟏
𝐀 𝐟 𝐄 = 𝐄−𝐄𝐅
𝟏+𝐞𝐱𝐩[ ]
𝐤𝐓

𝟏
𝐁 𝐟 𝐄 = 𝐄𝐅
𝟏+𝐞𝐱𝐩[𝐄− ]
𝐤𝐓
𝐄𝐅
(D) 𝐟 𝐄 = 𝐄−𝐄𝐅
𝟏 𝟏+𝐞𝐱𝐩[ ]
𝐂 𝐟 𝐄 = 𝐄+𝐄𝐅
𝐤𝐓
𝟏+𝐞𝐱𝐩[ ]
𝐤𝐓
13. According to Fermi Dirac statistics, the probability of
electron occupation in an energy level E is given by,

𝟏
𝐀 𝐟 𝐄 = 𝐄−𝐄𝐅
𝟏+𝐞𝐱𝐩[ ]
𝐤𝐓

𝟏
𝐁 𝐟 𝐄 = 𝐄𝐅
𝟏+𝐞𝐱𝐩[𝐄− ]
𝐤𝐓
𝐄𝐅
(D) 𝐟 𝐄 = 𝐄−𝐄𝐅
𝟏 𝟏+𝐞𝐱𝐩[ ]
𝐂 𝐟 𝐄 = 𝐄+𝐄𝐅
𝐤𝐓
𝟏+𝐞𝐱𝐩[ ]
𝐤𝐓
14. At 0K, according to Fermi-Dirac distribution, all the
energy levels above Fermi energy level are,

(A) Half occupied

(B) Completely Occupied
(C) Completely empty
(D) Half Empty
14. At 0K, according to Fermi-Dirac distribution, all the
energy levels above Fermi energy level are,

(A) Half occupied

(B) Completely Occupied
(C) Completely empty
(D) Half Empty
15. At T>0 K, the maximum probability of electron
occupation above Fermi level and minimum probability
of electron occupation bellow Fermi level are,

(A) Half at or below Fermi energy level

(B) Half above Fermi Energy level

(C) Both A & B

(D) None of the above

15. At T>0 K, the maximum probability of electron
occupation above Fermi level and minimum probability
of electron occupation bellow Fermi level are,

(A) Half at or below Fermi energy level

(B) Half above Fermi Energy level

(C) Both A & B

(D) None of the above

16. At T>0 K, the probability of occupation of electron
bellow fermi energy level ,

(A) Increases with the increase of temperature

(B) Independent of temperature

(C) Always remains Zero

(D) Decreases with the increase of temperature

16. At T>0 K, the probability of occupation of electron
bellow fermi energy level ,

(A) Increases with the increase of temperature

(B) Independent of temperature

(C) Always remains Zero

(D) Decreases with the increase of temperature

17. At T>0 K, the probability of occupation of electron
above fermi energy level ,

(A) Increases with the increase of temperature

(B) Independent of temperature
(C) Always remains Zero
(D) Decreases with the increase of temperature
17. At T>0 K, the probability of occupation of electron
above fermi energy level ,

(A) Increases with the increase of temperature

(B) Independent of temperature
(C) Always remains Zero
(D) Decreases with the increase of temperature
18. During the formation of Bands in solids, when the
interatomic distances between the atoms decrease,
the higher energy levels split,

(A) At last
(B) Both higher and lower energy levels split at the
same time
(C) At first
(D) None of the above
18. During the formation of Bands in solids, when the
interatomic distances between the atoms decrease,
the higher energy levels split,

(A) At last
(B) Both higher and lower energy levels split at the
same time
(C) At first
(D) None of the above
19. In solid state physics, the concept of hole is,

(A) The absence of an electron

(B) The concept never exist

(C) A quasi-particle which moves inside the lattice

(D) Both A & C

19. In solid state physics, the concept of hole is,

(A) The absence of an electron

(B) The concept never exist

(C) A quasi-particle which moves inside the lattice

(D) Both A & C

20. The forbidden band gap of a semiconductor is
around,

(A) 6 ev

(B) 1.2 ev

(C) 10 ev

(D) 12 ev
20. The forbidden band gap of a semiconductor is
around,

(A) 6 ev

(B) 1.2 ev

(C) 10 ev

(D) 12 ev
21. The resistivity of a semiconductor,

(A) Increases with the increase of temperature

(B) Decreases with the increase of temperature

(C) Does not change with temperature

(D) None of the above

21. The resistivity of a semiconductor,

(A) Increases with the increase of temperature

(B) Decreases with the increase of temperature

(C) Does not change with temperature

(D) None of the above

22. In an intrinsic semiconductor,

(A) The number of holes are equal to number of

electrons
(B) It is a pure semiconductor
(C) The Fermi level lies midway in the forbidden band
gap
(D) All of the above
22. In an intrinsic semiconductor,

(A) The number of holes are equal to number of

electrons
(B) It is a pure semiconductor
(C) The Fermi level lies midway in the forbidden band
gap
(D) All of the above
23. Assuming the mass of an electron is exactly equal to the mass of
a hole, what will the expression for the Fermi energy level of an
intrinsic semiconductor, (𝑬𝒗 , 𝑬𝑪 𝒂𝒏𝒅 𝑬𝑭 are energy of valence band,
conduction band and Fermi level respectively)

𝐄𝐯 −𝐄𝐜
(A) 𝐄𝐅 =
𝟐

𝟑 𝐄𝐯 −𝐄𝐜
(B) 𝐄𝐅 =
𝟐 𝟐 𝐄𝐯 +𝐄𝐜
(D) 𝐄𝐅 =
𝟑 𝐄𝐯 +𝐄𝐜 𝟐
(C) 𝐄𝐅 =
𝟐 𝟐
23. Assuming the mass of an electron is exactly equal to the mass of
a hole, what will the expression for the Fermi energy level of an
intrinsic semiconductor, (𝑬𝒗 , 𝑬𝑪 𝒂𝒏𝒅 𝑬𝑭 are energy of valence band,
conduction band and Fermi level respectively)

𝐄𝐯 −𝐄𝐜
(A) 𝐄𝐅 =
𝟐

𝟑 𝐄𝐯 −𝐄𝐜
(B) 𝐄𝐅 =
𝟐 𝟐 𝐄𝐯 +𝐄𝐜
(D) 𝐄𝐅 =
𝟑 𝐄𝐯 +𝐄𝐜 𝟐
(C) 𝐄𝐅 =
𝟐 𝟐
24. How many types of extrinsic semiconductors are
there?

(A) One
(B) Two
(C) Three
(D) Four
24. How many types of extrinsic semiconductors are
there?

(A) One
(B) Two
(C) Three
(D) Four
25. In N-type semiconductor, the Fermi energy level lies

(A) Exactly midway between conduction band and

valence band
(B) Near to the valence band
(C) Near to the conduction band
(D) None of the above
25. In N-type semiconductor, the Fermi energy level lies

(A) Exactly midway between conduction band and

valence band
(B) Near to the valence band
(C) Near to the conduction band
(D) None of the above
26. In P-type semiconductor, the Fermi level lies,

(A) Near to the valence band

(B) Near to the conduction band
(C) Halfway between conduction band and valence
band
(D) None of the above
26. In P-type semiconductor, the Fermi level lies,

(A) Near to the valence band

(B) Near to the conduction band
(C) Halfway between conduction band and valence
band
(D) None of the above
27. Which of the following is/are the indirect band gap
semiconductor,

(A) Si

(B) Ge

(C) InP

(D) A & B
27. Which of the following is/are the indirect band gap
semiconductor,

(A) Si

(B) Ge

(C) InP

(D) A & B
28. Hall voltage is directly proportional to,

(A) Current
(B) Electric field
(C) Magnetic flux density
(D) All of above
28. Hall voltage is directly proportional to,

(A) Current
(B) Electric field
(C) Magnetic flux density
(D) All of above
29. In Hall effect, voltage across probe is known as

(A) Hall voltage

(B) E.M.F
(C) Potential difference
(D) Hall potential
29. In Hall effect, voltage across probe is known as

(A) Hall voltage

(B) E.M.F
(C) Potential difference
(D) Hall potential
30. Which of the following parameters can’t be found
with Hall Effect?

(A) Polarity
(B) Conductivity
(C) Carrier concentration
(D) Area of the device
30. Which of the following parameters can’t be found
with Hall Effect?

(A) Polarity
(B) Conductivity
(C) Carrier concentration
(D) Area of the device
31. In the Hall Effect, the electric field is in x direction
and the velocity is in y direction. What is the
direction of the magnetic field?

(A) X
(B) Y
(C) Z
(D) XY plane
31. In the Hall Effect, the electric field is in x direction
and the velocity is in y direction. What is the
direction of the magnetic field?

(A) X
(B) Y
(C) Z
(D) XY plane
32. Calculate the hall voltage when the Electric Field is
5V/m and height of the semiconductor is 2 cm.

(A) 10V
(B) 1V
(C) 0.1V
(D) 0.01V
32. Calculate the hall voltage when the Electric Field is
5V/m and height of the semiconductor is 2 cm.

(A) 10V
(B) 1V
(C) 0.1V
(D) 0.01V
33. Measurement of Hall coefficient enables the
determination of:

(A) Mobility of charge carriers

(B) Type of conductivity and concentration of charge
carriers
(C) Temperature coefficient and thermal conductivity
(D) None of the above
33. Measurement of Hall coefficient enables the
determination of:

(A) Mobility of charge carriers

(B) Type of conductivity and concentration of charge
carriers
(C) Temperature coefficient and thermal conductivity
(D) None of the above
34. In a P-type silicon sample, the hole concentration
is 2.25 x 1015/cm3. If the intrinsic carrier concentration
1.5 x 1010/cm3, the electron concentration is

(A)1021/cm3
(B)1010/cm3
(C)1016/cm3
(D)None of the above
34. In a P-type silicon sample, the hole concentration is 2.25 x 1015/cm3. If the
intrinsic carrier concentration 1.5 x 1010/cm3, the electron concentration is
(A)1021/cm3
(B)1010/cm3
(C)1016/cm3
(D)None of the above
35. Hall Effect is observed in a specimen when it
(metal or a semiconductor) is carrying current and is
placed in a magnetic field. The resultant electric field
inside the specimen will be in:

(A) A direction normal to both current and magnetic

field
(B) The direction of current
(C) A direction anti parallel to magnetic field
(D) None of the above
35. Hall Effect is observed in a specimen when it
(metal or a semiconductor) is carrying current and is
placed in a magnetic field. The resultant electric field
inside the specimen will be in:

(A) A direction normal to both current and magnetic

field
(B) The direction of current
(C) A direction anti parallel to magnetic field
(D) None of the above
36. At room temperature, the current in an
intrinsic semiconductor is due to

(A) Holes
(B) Electrons
(C) Hole and Electrons
(D)None of the above
36. At room temperature, the current in an
intrinsic semiconductor is due to

(A) Holes
(B) Electrons
(C) Hole and Electrons
(D)None of the above
37. If the temperature of an extrinsic
semiconductor is increased so that the intrinsic carrier
concentration is doubled, then:

(A) The majority carrier density doubles

(B) The minority carrier density doubles
(C) Both majority and minority carrier densities double
(D) None of the above
37. If the temperature of an extrinsic
semiconductor is increased so that the intrinsic carrier
concentration is doubled, then:

(A) The majority carrier density doubles

(B) The minority carrier density doubles
(C) Both majority and minority carrier densities double
(D) None of the above
38. Consider the following statements: Compared to Silicon,
Gallium Arsenide (GaAs) has:
1. Higher signal speed since electron mobility is higher
2. Poorer crystal quality since stoichiometric growth difficult
3. Easier to grow crystals since the vapor pressure Arsenic is
high
4. Higher optoelectronic conversion efficiency

(A) 1, 2, 3 and 4 are correct

(B) 1, 2 and 3 are correct
(C) 3 and 4 are correct
(D) None of the above
38. Consider the following statements: Compared to Silicon,
Gallium Arsenide (GaAs) has:
1. Higher signal speed since electron mobility is higher
2. Poorer crystal quality since stoichiometric growth difficult
3. Easier to grow crystals since the vapor pressure Arsenic is
high
4. Higher optoelectronic conversion efficiency

(A) 1, 2, 3 and 4 are correct

(B) 1, 2 and 3 are correct
(C) 3 and 4 are correct
(D) None of the above
39.In an intrinsic semiconductor, the mobility of
electrons in the conduction band is:

(A)Less than the mobility of holes in the valence

band
(B) Zero
(C) Greater than the mobility of holes in the
valence band
(D)None of the above
39.In an intrinsic semiconductor, the mobility of
electrons in the conduction band is:

(A)Less than the mobility of holes in the valence

band
(B) Zero
(C) Greater than the mobility of holes in the
valence band
(D)None of the above