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Isc N-Channel MOSFET Transistor 60N06-14: Description

This document summarizes the specifications and characteristics of an N-channel MOSFET transistor from ISC. It has a maximum drain-source voltage of 60V, can handle continuous drain currents up to 60A at 25C and 50A at 100C, and has applications in regulators, high-current switching, solenoid and relay drivers. It provides key parameters including breakdown voltage, threshold voltage, on-resistance, leakage currents and maximum ratings.

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51 views

Isc N-Channel MOSFET Transistor 60N06-14: Description

This document summarizes the specifications and characteristics of an N-channel MOSFET transistor from ISC. It has a maximum drain-source voltage of 60V, can handle continuous drain currents up to 60A at 25C and 50A at 100C, and has applications in regulators, high-current switching, solenoid and relay drivers. It provides key parameters including breakdown voltage, threshold voltage, on-resistance, leakage currents and maximum ratings.

Uploaded by

DSaintCrow
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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isc N-Channel MOSFET Transistor 60N06-14

·DESCRIPTION
·High current capability
·Avalanche rugged technology
·Low gate charge
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation

·APPLICATIONS
·Regulator
·High current,high speed switching
·Solenoid and relay drivers

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL ARAMETER VALUE UNIT

VDSS Drain-Source Voltage (VGS=0) 60 V

VGS Gate-Source Voltage ±20 V

Drain Current-continuous@ TC=25℃ 60


ID A
Drain Current-continuous@ TC=100℃ 50

ID(puls) Pulse Drain Current 240 A

Ptot Total Dissipation@TC=25℃ 150 W

Tj Max. Operating Junction Temperature 175 ℃

Tstg Storage Temperature Range -55~175 ℃

·THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

1.0
Rth j-c Thermal Resistance, Junction to Case ℃/W

Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


isc N-Channel MOSFET Transistor 60N06-14

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA 60 V

VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V

VSD Diode Forward On-Voltage IS=60A ;VGS= 0 1.6 V

RDS(on) Drain-Source On-Resistance VGS= 10V; ID=30A 14 mΩ

IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA

IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS= 0 250 µA

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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