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    2N2369A Silicon NPN Transistor Description

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    ReymondJosuéArgüelloRojas
    The 2N2369A is a silicon NPN transistor designed for high-speed switching applications. It has a maximum collector-emitter voltage of 40V and can handle currents up to 200mA continuously or 500mA peak. Key specifications include a saturation voltage below 300mV at currents up to 30mA and a transition frequency above 500MHz. The device comes in a standard TO-18 metal can package.

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    2N2369A Silicon NPN Transistor Description

    Uploaded by

    ReymondJosuéArgüelloRojas
    28 views4 pages
    The 2N2369A is a silicon NPN transistor designed for high-speed switching applications. It has a maximum collector-emitter voltage of 40V and can handle currents up to 200mA continuously or 500mA peak. Key specifications include a saturation voltage below 300mV at currents up to 30mA and a transition frequency above 500MHz. The device comes in a standard TO-18 metal can package.

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    The 2N2369A is a silicon NPN transistor designed for high-speed switching applications. It has a maximum collector-emitter voltage of 40V and can handle currents up to 200mA continuously or 500mA peak. Key specifications include a saturation voltage below 300mV at currents up to 30mA and a transition frequency above 500MHz. The device comes in a standard TO-18 metal can package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    28 views4 pages

    2N2369A Silicon NPN Transistor Description

    Uploaded by

    ReymondJosuéArgüelloRojas
    The 2N2369A is a silicon NPN transistor designed for high-speed switching applications. It has a maximum collector-emitter voltage of 40V and can handle currents up to 200mA continuously or 500mA peak. Key specifications include a saturation voltage below 300mV at currents up to 30mA and a transition frequency above 500MHz. The device comes in a standard TO-18 metal can package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    2N2369A

    w w w. c e n t r a l s e m i . c o m
    SILICON
    NPN TRANSISTOR DESCRIPTION:
    The CENTRAL SEMICONDUCTOR 2N2369A is a
    silicon epitaxial planar NPN transistor designed for ultra
    high speed saturated switching applications.

    MARKING: FULL PART NUMBER

    TO-18 CASE

    MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS


    Collector-Base Voltage VCBO 40 V
    Collector-Emitter Voltage VCES 40 V
    Collector-Emitter Voltage VCEO 15 V
    Emitter-Base Voltage VEBO 4.5 V
    Continuous Collector Current IC 200 mA
    Peak Collector Current ICM 500 mA
    Power Dissipation PD 360 mW
    Power Dissipation (TC=25°C) PD 1.2 W
    Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
    Thermal Resistance ΘJA 486 °C/W
    Thermal Resistance ΘJC 146 °C/W

    ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)


    SYMBOL TEST CONDITIONS MIN MAX UNITS
    ICBO VCB=20V 400 nA
    ICBO VCB=20V, TA=150°C 30 μA
    BVCBO IC=10μA 40 V
    BVCES IC=10μA 40 V
    BVCEO IC=10mA 15 V
    BVEBO IE=10μA 4.5 V
    VCE(SAT) IC=10mA, IB=1.0mA 200 mV
    VCE(SAT) IC=10mA, IB=1.0mA, TA=125°C 300 mV
    VCE(SAT) IC=30mA, IB=3.0mA 250 mV
    VCE(SAT) IC=100mA, IB=10mA 500 mV
    VBE(SAT) IC=10mA, IB=1.0mA 700 850 mV
    VBE(SAT) IC=30mA, IB=3.0mA 1.15 V
    VBE(SAT) IC=100mA, IB=10mA 1.6 V
    hFE VCE=1.0V, IC=10mA 40 120
    hFE VCE=0.35V, IC=10mA, TA=–55°C 20
    hFE VCE=0.4V, IC=30mA 30
    hFE VCE=1.0V, IC=100mA 20

    R1 (23-June 2014)
    2N2369A

    SILICON
    NPN TRANSISTOR

    ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)


    SYMBOL TEST CONDITIONS MIN MAX UNITS
    fT VCE=10V, IC=10mA, f=100MHz 500 MHz
    Cob VCB=5.0V, IE=0, f=140kHz 4.0 pF
    ton VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA 12 ns
    toff VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA 18 ns
    ts VCC=10V, IC=10mA, IB1=IB2=10mA 13 ns

    TO-18 CASE - MECHANICAL OUTLINE

    LEAD CODE:
    1) Emitter
    2) Base
    3) Collector

    MARKING: FULL PART NUMBER

    R1 (23-June 2014)
    w w w. c e n t r a l s e m i . c o m
    OUTSTANDING SUPPORT AND SUPERIOR SERVICES

    PRODUCT SUPPORT
    Central’s operations team provides the highest level of support to insure product is delivered on-time.
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    • Consolidated shipping options

    DESIGNER SUPPORT/SERVICES
    Central’s applications engineering team is ready to discuss your design challenges. Just ask.
    • Free quick ship samples (2nd day air) • Special wafer diffusions
    • Online technical data and parametric search • PbSn plating options
    • SPICE models • Package details
    • Custom electrical curves • Application notes
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    • Customer specific screening • Custom product and package development
    • Up-screening capabilities

    REQUESTING PRODUCT PLATING


    1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
    ordering (example: 2N2222A TIN/LEAD).
    2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
    when ordering (example: 2N2222A PBFREE).

    CONTACT US

    Corporate Headquarters & Customer Support Team

    Central Semiconductor Corp.


    145 Adams Avenue Worldwide Field Representatives:
    Hauppauge, NY 11788 USA www.centralsemi.com/wwreps
    Main Tel: (631) 435-1110
    Main Fax: (631) 435-1824 Worldwide Distributors:
    Support Team Fax: (631) 435-3388 www.centralsemi.com/wwdistributors
    www.centralsemi.com

    For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER,
    which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms

    w w w. c e n t r a l s e m i . c o m (001)
    Mouser Electronics

    Authorized Distributor

    Click to View Pricing, Inventory, Delivery & Lifecycle Information:

    Central Semiconductor:
    PN2369A 2N2369A

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