Investigate different semiconductor devices, their construction, and the inventor involved in these devices

IMAGE SEMICONDUCTOR DEVICE DESCRIPTION

Resistor The resistor is a two-terminal
semiconductor device that was
invented by an American
inventor and Engineer Otis
Frank Boykin in 1959. It was
made out of carbon, metal, or
metal-oxide film.

Capacitor The capacitor is a two-

terminal semiconductor device
that was invented by Pieter
van Musschenbroek and
Ewald George von Kleist in
1745. It was created out of two
metal plates and an insulating
material known as a dielectric.

Zener Diode The Zener diode is a two-

terminal semiconductor device
that was invented by an
American Physicist Clarence
Melvin Zener. It was made out
of a metallic layer which is
used to form the cathode and
anode terminals. In addition,
the junction regions are
layered with Silicon oxide to
prevent contamination of the
junction.

Phototransistors The phototransistor is a two-

terminal semiconductor device
that was invented by
American Physicist John N.
Shive on March 30, 1950. In
ancient times it was made out
of germanium and silicon
materials. Hence, nowadays it
 was constructed using gallium
and arsenide.

Schottky Diode The Schottky Diode is a two-

terminal semiconductor device
that was invented in 1938 by
Walter H. Schottky. It is
constructed by joining a metal
electrode with a lightly doped,
n-type semiconductor.

Light Emitting Diode The Light Emitting Diode or

simply known as LED is a to-
terminal semiconductor device
that was invented by Nick
Holonyak and Oleg Losev in
1962. It is made out of three
layers, such as the P-type
semiconductor layer, the N-
type semiconductor, and the
active region. In which the P-
layer has a majority of holes
while the N-type has a
majority of electrons.

Photocell The photocell is a to-terminal

semiconductor device that was
invented by American
inventor Charles Fritts in
1883. This semiconductor
device was consisting of a
highly evacuated or gas-filled
glass tube, an emitter, and a
collector.

Bipolar Transistor (IGBT) The Bipolar Transistor (IGBT)

is a three-terminal
semiconductor material that
was invented by Jayant Baliga.
This device consists of a PN-
junction producing three
connecting terminals, such as
 Emitter (E), Base (Base), and
Collector (C).

Op-amps The op-amps is a three-

terminal semiconductor device
that was invented by Karl D.
Swartzel in 1967. The basic
construction of Op-amps is a
three-terminal device with 2-
inputs and 1-input.

Integrated Circuits The ICs or Integrated Circuits

is a three-terminal
semiconductor device that was
invented by multiple inventors
such as Jack Kilby, Robert
Noyce, Frank Wanlass, and
Edward Keonjian on April 25,
1961. Ics’ are built with
semiconducting components
like silicon. Subsequently, ICs
are small size components,
hence, a series of tiny gold and
aluminum wires are joined
together and molded as ell into
a flat block of plastic or
ceramic material.

Differentiate the three types of materials.

Characteristics Conductor Semiconductor Insulator

Resistance The conductor conducts Semiconductor The insulators do not
the electrical current materials conduct conduct any current,
electric current less than
conductors (mostly
metals) and greater than
 which results in low an insulator (generally therefore resistance is
resistance. ceramics). extremely high.

Valence Electron Conductor materials The semiconductor has Insulator materials have
have only one valence four valence electrons in eight valence electrons
electron on their its outermost orbit. A in their outermost orbit.
outermost orbit. In pure semiconductor Unlike conductors, it
addition, the atom tends doped in a pentavalent absorbs valence
to release valence atom creates N-type electrons.
electrons and flow freely material while a pure
from one atom to semiconductor doped in
another. a trivalent atom will
result in P-type material.

Bonding of Electrons The conductor is formed Semiconductors are The insulators are
using metallic bonding formed due to covalent formed due to ionic
which holds atoms bonding. bonding which locked
together. electrons so that the
current won’t flow.

Energy Gap The conduction and The valence and The valence and
valence bands conduction bands in conduction bands are
overlapped in conductor semiconductors are separated by the band
materials. separated by the gap which electrons are
forbidden energy gap of forbidden to occupy. In
1.1 electron volts (eV). which the forbidden
energy gap is
approximately equal to
15 electron volts (eV).
 Examples Gold, Copper, Steel, Transistors, Capacitor, Glass, Oil, Diamond,
Aluminum, Silver, Sea Resistor, Diodes, ICs, Dry wood, rubber,
Water Op-amps plastic, cloth, ceramic,
foam, paper

Compare the two types of semiconductor materials

Intrinsically pure semiconductors are those that are chemically pure, or free of impurities. These are gallium
arsenide, germanium, and silicon. While Extrinsic semiconductors are semiconductors that are doped with
specific impurities. While extrinsic semiconductors are semiconductors that are doped with specific
impurities. If a pentavalent atom is added to a pure semiconductor material, an N-type material will be
formed. However, if a trivalent atom is added to a pure semiconductor material, a P-type will be formed.

Sketch the covalent bonding of the P-type and N-type material.