Progress In Electromagnetics Research Symposium Proceedings, Suzhou, China, Sept.

12–16, 2011 679

Design of an LNA with Ultra Low Noise and Model Noise

Temperature at 2.45 GHz
S. A. Burney and C. Qunsheng
College of Electronic Information Engineering
Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China

Abstract— This paper presents the design of a low-noise amplifier (LNA) that exhibits ultra low
noise figure (NF) and noise temperature. Emphasis was given to achieve the minimum noise figure
as offered by the device. The selected device uses E-PHEMT technology and has 0.25 micron gates
allowing ultra low noise figure; furthermore requiring minimum feedback for stability. The present
design of the LNA features simple structure, minimum NF and excellent overall performance.
Furthermore, the present LNA has improved S11 value near −10 dB and output VSWR of 1.073,
and obtained an excellent noise figure of 0.202 and model noise temperature of 13.8 K. This design
has potential to serve in civil marine radar applications.

1. INTRODUCTION
Low-noise Amplifier (LNA) is a key component used in the receiving end of almost every commu-
nication system. The required input signal of these communication systems is usually very weak
and needs to be amplified. The primary purpose of LNA is to amplify the input signal, but adding
as little additional noise as possible. The core of any LNA design is the selection of the right
transistor [1]. Among various LNA designs, the pseudomorphic high-electron mobility transistor
(PHEMT) device provides high trans-conductance gain and high efficiency characteristics simul-
taneously [2]. The enhancement mode technology provides superior performance while allowing a
DC grounded source amplifier with a single polarity power supply to be easily designed and built.
As opposed to the depletion-mode PHEMT, where the gate must be made negative with respect
to the source for proper operation, an enhancement-mode PHEMT requires that the gate be made
more positive than the source. Biasing an enhancement-mode PHEMT is as simple as biasing a
bipolar transistor [3].
Gawande et al. [1] designed an LNA with the lowest noise (achieved a simulated NF of 0.3) which
used a device fhx45x by EUDYNA Technologies. Our work employed another device VMMK-1218,
by Avago Technologies, that has a noise figure of approximately 0.2 at 2.45 GHz.
This paper focuses on the design of an LNA that achieves low noise figure and modal noise
temperature. The next sections discuss the main design equations and the design methodology.
The analytical treatment of complete design procedure has been expressed precisely. Various design
options have been discussed depending upon the design cases and criteria. The present design has
also been verified as shown in RF simulation results.
2. DESIGN METHODOLOGY
2.1. Transistor Selection
This is the most fundamental step in LNA design. Although many transistors could have been
suitable for this application but the chosen transistor for our design is an ultra low-noise amplifier
fabricated using Enhancement Mode PHEMT (EPHEMT) technology, the Avago Technologies
VMMK-1218. Assessing several parameters, it was found that this device exhibits comparatively
reasonable tradeoffs. The device VMMK-1218 characterizes high dynamic range, high gain and
low noise figure that generates off of a single position DC power supply. The use of 0.25 micron
gates allow ultra low noise figure. This device is intended for any 500 MHz to 18 GHz application
including 802.11abgn WLAN, WiMax, BWA 802.16 & 802.20 and military applications [4].
The Avago enhancement mode PHEMT devices do not require a negative gate bias voltage as
they are “normally off”. They can help simplify the design and reduce the cost of receivers and
transmitters in many applications from 500 MHz to 18 GHz [4].
2.2. Design Equations
Consider the amplifier block shown in Fig. 1, it highlights the reflection coefficients used to design
a microwave amplifier. In Fig. 1, Γs , Γopt , Γin , Γout , Γa and Γb are the reflection coefficients of the
source impedance, the optimum noise impedance, at the input of transistor, output of transistor,
680 PIERS Proceedings, Suzhou, China, September 12–16, 2011

50Ω

Input Matching Output Matching

50Ω
Vs Network Network

Γa Γs Γ in Γout Γl Γb

Figure 1: Microwave transistor amplifier.

input of matching network and output of matching network, respectively. It is by manipulating

these values that the goals are achieved. In this design we start with the noise figure and the
input VSWR. There exists a tradeoff between these two parameters. In LNA design noise has more
importance as it plays a critical role in determining the overall system NF. In a receiver an LNA is
the first element in the chain. The NF of the first element in the chain adds directly to the system
NF. The design equations used are presented as follows [5].

Γs = Γout As Γout depends on Γs , (1)

S12 S21 Γs
Γout = S22 + (2)
1 − S11 × Γs
Assuming output VSWR = 1, then
Γl = Γ∗out (3)
Else choose a suitable point on another VSWR circle. As Γin depends on Γl ,
S12 S21 Γl
Γin = S11 + (4)
1 − S22 × Γl
¯ ¯
¯ Γin − Γs ∗ ¯
¯
|Γa | = ¯ ¯ (5)
1 − Γin Γs ¯
1 + |Γa |
VSWRin = (6)
1 − |Γa |
1 + |Γb |
VSWRout = (7)
1 − |Γb |
³ ´
|Γout | 1 − |Γb |2
Cvo = (8)
1 − |Γb Γout |
³ ´
|Γb | 1 − |Γout |2
rvo = (9)
1 − |Γb Γout |2
4rn |Γs − ΓOP T |2
F = NFmin + (10)
(1 − |Γs |2 ) |1 + ΓOP T |2
where Cvo and rvo represents the centre and radius of the Γb or the output VSWR circle respectively,
rn is the normalized noise resistance. To express the noise temperature of a two port network the
following equations were used [1]. The noise temperature was calculated by [1, 6],

4Rn To |Γs − ΓOP T |2

Te = Tmin + (11)
Zo (1 − |Γs |2 ) |1 + ΓOP T |2
Tmin
NFmin = 1 + (12)
290
Progress In Electromagnetics Research Symposium Proceedings, Suzhou, China, Sept. 12–16, 2011 681

where Te is the effective input noise temperature. Tmin is the minimum noise temperature that
results if optimum impedance is presented to the transistor. Rn is the noise resistance, To is 290 K,
and Zo is the reference impedance (typically 50 Ω).
2.3. Stability and Matching Analysis Based on Design Equations
The object is to design an ultra low noise amplifier so it is best to consider the optimum point for
matching on the Smith chart. For proper matching circuit it is necessary to choose points for Γs
and Γl that lie in the stable region of the Smith chart. The basic chip package layout is designed
and simulated. This offers a noticeable advantage, the microstrip attached to the source acts as
inductance, thus giving a better view of the stability circles. Small changes in inductance added to
the source of an LNA can have large impacts on gain, NF and stability. As inductance increases,
stability increases at the expense of gain. However, continued increases in inductance can soon lead
to degraded gain and NF [7]. Γopt had a reasonable stability margin thus it was selected as Γs for
our design. The gain at that point was found to be less than the ‘maximum stable gain’. We can
thus use Equation (1) for our analysis and proceed. Using Equation (2) we obtained the value of
Γout .
Next the output stability circles were drawn together with the constant Γb circles or can also be
referred to as output VSWR circles. Here we assumed the value of output VSWR to be 1 and drew
the circles using Equations (7) to (9). Equations (8) and (9) provide the centre and the radius of
the circles to be drawn. To obtain the value of Γl output VSWR of 1 was assumed, the resulting
point is in the stable region, it had a considerable stability margin. Taking this value of Γl , the
input VSWR can be calculated using Equations (4) to (6). The resulting input VSWR was found
slightly higher. The value of output VSWR was increased to get a suitable input VSWR. To decide
these values both the above mentioned equations together and computer aided design softwares,
the solutions can be achieved quickly and accurately. This gives us an idea of the final results (such
as resulting VSWR, gain and NF) before the actual layout is designed.
2.4. Matching
Using these values of Γs and Γl , the input and output matching networks were designed. The
procedure requires the use of Smith chart, since the admittance of the shunt stub adds to the load
admittance, it is convenient to use the Y Smith chart [5].
The results were then optimized for further tuning. A harmonicCbalance (HB) simulation
was used for the non-linear analysis. HB was used for the simulations of 1 dB compression point
(P1 dB) and output third order intercept point (OIP3) [8]. The input signal driving the circuit in
HB simulation was kept in the linear range. The results show the OIP3 to be 22.08 dBm, and the
output 1 dB compression point at 8.28 dBm.
3. RESULTS
This section presents the co-simulations results of low noise amplifier. The substrate has a relative
permeability (²r ) of 2.55. The simulations were done using RF simulations. The RF mode uses
a quasi-static formulation. In the quasi-static formulation, the Green functions are low-frequency

3.5 6
NFmin
3.0
nf(2) 5
2.5
Output VSWR

2.0 4
NFmin
nf(2)

1.5
3

1.0

2
0.5

0.0 1
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
freq, GHz freq, GHz

Figure 2: Simulated noise figure of the low-noise am- Figure 3: Simulated output VSWR of the low noise
plifier over 2–3 GHz frequency range. amplifier over 2–3 GHz frequency range.
682 PIERS Proceedings, Suzhou, China, September 12–16, 2011

Table 1: Summarized important results.

Results at 2.45 GHz

Noise figure 0.202 dB
Modal Noise Temperature 13.8 K
Output VSWR 1.073
S (1, 1) −9.4 dB
S (2, 2) −29.4 dB
S (2, 1) 14.6 dB

20

15

10

-5
dB(S(2,2))
dB(S(2,1))
dB(S(1,1))

-10

-15

-20

-25

dB(S(1,1))
-30
dB(S(2,1))
-35
dB(S(2,2))
-40
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
freq, GHz

Figure 4: Simulated S-parameters of the low noise amplifier over 2–3 GHz frequency range.

approximations to the full-wave and more general Green functions. Because of the approximations
made in the RF mode, the simulations are more efficient [9].
The results shown in the Figures 2 to 4 specify that the LNA is optimized for ultra low noise at
2.45 GHz. The results also exhibit very good output VSWR, S-parameters and high OIP3. This
shows that the LNA is operable from 2.2 to 2.7 GHz for low noise and high performance, with the
lowest noise achieved at 2.45 GHz.

4. CONCLUSIONS
In this paper, an LNA with a model noise temperature of 13.8 K at 2.45 GHz, has been designed
using E-PHEMT VMMK-1218 by Avago technologies. The LNA design has shown very good overall
performance apart from the ultra low noise result. The frequency range from 2–4 GHz represents
the S-band (wavelength 8–15 cm); this wavelength is not easily attenuated [10], thus in adverse
weather conditions the S-band is preferred for marine radar applications. Nevertheless X-Band
(because of its higher frequency) provides a higher resolution and a sharper image making it useful
in normal conditions. Based on this experience and results it is intended to design a wideband
LNA for civil marine radar applications.

ACKNOWLEDGMENT
We would like to thank Prof. Zhou Yong Gang for his technical support and guidance; and
Mr. Ali Ahmed for his facilitation in the design process; especially in crucial bottle necks.
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