APT56F60B2

APT56F60L
600V, 60A, 0.11Ω Max, trr ≤290ns

N-Channel FREDFET
T-Max®
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. TO-264

This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
APT56F60B2 APT56F60L
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
Single die FREDFET
at very high frequency.

FEATURES TYPICAL APPLICATIONS

• Fast switching with low EMI • ZVS phase shifted and other full bridge
• Low trr for high reliability • Half bridge
• Ultra low Crss for improved noise immunity • PFC and other boost converter
• Low gate charge • Buck converter
• Avalanche energy rated • Single and two switch forward
• RoHS compliant • Flyback

Absolute Maximum Ratings

Symbol Parameter Ratings Unit
Continuous Drain Current @ TC = 25°C 60
ID
Continuous Drain Current @ TC = 100°C 38 A
IDM Pulsed Drain Current 1
210
VGS Gate-Source Voltage ±30 V
EAS Single Pulse Avalanche Energy 2 1580 mJ
IAR Avalanche Current, Repetitive or Non-Repetitive 28 A

Thermal and Mechanical Characteristics

Symbol Characteristic Min Typ Max Unit
PD Total Power Dissipation @ TC = 25°C 1040 W
RθJC Junction to Case Thermal Resistance 0.12
°C/W
RθCS Case to Sink Thermal Resistance, Flat, Greased Surface 0.11
TJ,TSTG Operating and Storage Junction Temperature Range -55 150
°C
TL Soldering Temperature for 10 Seconds (1.6mm from case) 300
04-2009

0.22 oz
WT Package Weight
6.2 g
Rev C

10 in·lbf
Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw
1.1 N·m
050-8154

MicrosemiWebsite-http://www.microsemi.com
 Static Characteristics TJ = 25°C unless otherwise specified APT56F60B2_L
Symbol Parameter Test Conditions Min Typ Max Unit
VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 600 V
ΔVBR(DSS)/ΔTJ Breakdown Voltage Temperature Coefficient Reference to 25°C, ID = 250µA 0.57 V/°C
RDS(on) Drain-Source On Resistance 3 VGS = 10V, ID = 28A 0.09 0.11 Ω
VGS(th) Gate-Source Threshold Voltage 2.5 4 5 V
VGS = VDS, ID = 2.5mA
ΔVGS(th)/ΔTJ Threshold Voltage Temperature Coefficient -10 mV/°C
VDS = 600V TJ = 25°C 250
IDSS Zero Gate Voltage Drain Current µA
VGS = 0V TJ = 125°C 1000
IGSS Gate-Source Leakage Current VGS = ±30V ±100 nA

Dynamic Characteristics TJ = 25°C unless otherwise specified

Symbol Parameter Test Conditions Min Typ Max Unit
gfs Forward Transconductance VDS = 50V, ID = 28A 55 S
Ciss Input Capacitance 11300
VGS = 0V, VDS = 25V
Crss Reverse Transfer Capacitance 115
f = 1MHz
Coss Output Capacitance 1040
4
pF
Co(cr) Effective Output Capacitance, Charge Related 550
VGS = 0V, VDS = 0V to 400V
Co(er) 5
Effective Output Capacitance, Energy Related 285
Qg Total Gate Charge 280
VGS = 0 to 10V, ID = 28A,
Qgs Gate-Source Charge 60 nC
VDS = 300V
Qgd Gate-Drain Charge 120
td(on) Turn-On Delay Time Resistive Switching 65
tr Current Rise Time VDD = 400V, ID = 28A 75
ns
td(off) Turn-Off Delay Time RG = 2.2Ω 6 , VGG = 15V 190
tf Current Fall Time 60

Source-Drain Diode Characteristics

Symbol Parameter Test Conditions Min Typ Max Unit
Continuous Source Current MOSFET symbol
IS 60
(Body Diode) showing the
integral reverse p-n A
Pulsed Source Current junction diode
ISM (body diode) 210
(Body Diode) 1
VSD Diode Forward Voltage ISD = 28A, TJ = 25°C, VGS = 0V 1.2 V
TJ = 25°C 255 290
trr Reverse Recovery Time ns
TJ = 125°C 450 540
ISD = 28A 3 TJ = 25°C 1.41
Qrr Reverse Recovery Charge µC
diSD/dt = 100A/µs TJ = 125°C 3.66
VDD = 100V TJ = 25°C 10.7
Irrm Reverse Recovery Current A
TJ = 125°C 15.8
ISD ≤ 28A, di/dt ≤1000A/µs, VDD = 400V,
dv/dt Peak Recovery dv/dt 20 V/ns
TJ = 125°C

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 4.03mH, RG = 25Ω, IAS = 28A.
04-2009

3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
Rev C

VDS less than V(BR)DSS, use this equation: Co(er) = -1.10E-7/VDS^2 + 4.60E-8/VDS + 1.72E-10.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
050-8154

Microsemi reserves the right to change, without notice, the specifications and information contained herein.
 APT56F60B2_L
250 90
V = 10V T = 125°C
GS J
80
V = 7&8V
GS
200 70
TJ = -55°C
ID, DRAIN CURRENT (A)

ID, DRIAN CURRENT (A)

60
150 6V
50
TJ = 25°C
40
100
30
5.5V

50 20
TJ = 150°C
10 5V
TJ = 125°C
4.5V
0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics Figure 2, Output Characteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

3.0 200
NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX.
VGS = 10V @ 28A 180 250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
2.5
160

ID, DRAIN CURRENT (A)

140
2.0
120
TJ = -55°C
1.5 100
TJ = 25°C
80
TJ = 125°C
1.0
60

40
0.5
20
0 0
-55 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8
TJ, JUNCTION TEMPERATURE (°C) VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 3, RDS(ON) vs Junction Temperature Figure 4, Transfer Characteristics
100 20,000
TJ = -55°C Ciss
10,000
TJ = 25°C
80
gfs, TRANSCONDUCTANCE

C, CAPACITANCE (pF)

TJ = 125°C

60 1000

Coss
40

100

20 Crss

0 10
0 10 20 30 40 50 60 70 0 100 200 300 400 500 600
ID, DRAIN CURRENT (A) VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5, Gain vs Drain Current Figure 6, Capacitance vs Drain-to-Source Voltage
16 200
ID = 28A
VGS, GATE-TO-SOURCE VOLTAGE (V)

14 180
ISD, REVERSE DRAIN CURRENT (A)

160
12
VDS = 120V 140
10
120
VDS = 300V TJ = 25°C
8 100

6 80
04-2009

VDS = 480V TJ = 150°C

60
4
40
2
Rev C

20
0 0
0 50 100 150 200 250 300 350 400 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (V)
050-8154

Figure 7, Gate Charge vs Gate-to-Source Voltage Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
 APT56F60B2_L
250 250

100 100
IDM IDM
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

13µs 13µs
10 10
100µs 100µs
1ms 1ms
Rds(on)
10ms 10ms
Rds(on)
100ms TJ = 150°C 100ms
1 1 TC = 25°C DC line
DC line
Scaling for Different Case & Junction
TJ = 125°C Temperatures:
TC = 75°C ID = ID(T = 25°C)*(TJ - TC)/125
C
0.1 0.1
1 10 100 800 1 10 100 800
VDS, DRAIN-TO-SOURCE VOLTAGE (V) VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area Figure 10, Maximum Forward Safe Operating Area

0.14

0.12
ZθJC, THERMAL IMPEDANCE (°C/W)

D = 0.9
0.10
0.7
0.08

0.5 Note:
0.06

PDM
t1

0.04 0.3 t2
t1 = Pulse Duration
t
SINGLE PULSE Duty Factor D = 1/t2
0.02 0.1 Peak TJ = PDM x ZθJC + TC
0.05
0
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration

T-MAX® (B2) Package Outline TO-264 (L) Package Outline

e3 100% Sn Plated
4.69 (.185) 4.60 (.181)
5.31 (.209) 15.49 (.610) 5.21 (.205) 19.51 (.768)
1.49 (.059) 16.26 (.640) 1.80 (.071) 20.50 (.807)
2.49 (.098) 2.01 (.079)
3.10 (.122)
5.38 (.212) 3.48 (.137)
6.20 (.244)
5.79 (.228)
20.80 (.819) 6.20 (.244)
Drain

21.46 (.845)
Drain

25.48 (1.003)
26.49 (1.043)

4.50 (.177) Max. 2.87 (.113)

3.12 (.123) 2.29 (.090)
2.29 (.090) 2.69 (.106)
0.40 (.016) 1.65 (.065) 2.69 (.106)
0.79 (.031) 19.81 (.780) 2.13 (.084)
20.32 (.800) 19.81 (.780) Gate
Gate 21.39 (.842)
1.01 (.040)
1.40 (.055) Drain Drain
04-2009

Source Source
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.21 (.087) 2.59 (.102) 2.79 (.110)
2.59 (.102) 5.45 (.215) BSC 3.00 (.118) 3.18 (.125)
2-Plcs. 5.45 (.215) BSC
Rev C

These dimensions are equal to the TO-247 without the mounting hole. 2-Plcs.
Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches)
050-8154

Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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APT56F60L APT56F60B2