This document contains SPICE model parameters for an n-type MOSFET (cmosn) and a p-type MOSFET (cmosp) fabricated in a process with a gate oxide thickness of 4.4nm at a temperature of 27C. It includes parameters such as threshold voltage, transconductance, mobility, and noise that characterize the electrical behavior of the transistors.
This document contains SPICE model parameters for an n-type MOSFET (cmosn) and a p-type MOSFET (cmosp) fabricated in a process with a gate oxide thickness of 4.4nm at a temperature of 27C. It includes parameters such as threshold voltage, transconductance, mobility, and noise that characterize the electrical behavior of the transistors.
This document contains SPICE model parameters for an n-type MOSFET (cmosn) and a p-type MOSFET (cmosp) fabricated in a process with a gate oxide thickness of 4.4nm at a temperature of 27C. It includes parameters such as threshold voltage, transconductance, mobility, and noise that characterize the electrical behavior of the transistors.
This document contains SPICE model parameters for an n-type MOSFET (cmosn) and a p-type MOSFET (cmosp) fabricated in a process with a gate oxide thickness of 4.4nm at a temperature of 27C. It includes parameters such as threshold voltage, transconductance, mobility, and noise that characterize the electrical behavior of the transistors.