TPDVxx25

25 A high voltage Triacs

Features
■ On-state current (IT(RMS)): 25 A A2

■ Max. blocking voltage (VDRM/VRRM): 1200 V

■ Gate current (IGT): 150 mA
G
■ Commutation @ 10 V/µs: up to 88 A/ms
A1
■ Noise immunity: 2 kV/µs
■ Insulated package:
– 2,500 V rms (UL recognized: E81734).

Description
The TPDVxx25 series use high performance A1
alternistor technology. A2
G
Featuring very high commutation levels and high
TOP3 insulated
surge current capability, these devices are well
adapted to power control for inductive and
resistive loads (motor, transformer...) especially
on three-phase power grid. Targeted three-phase
applications include heating systems, motor
starters, and induction motor speed control
(especially for fans).

Table 1. Device summary

Parameter TPDV825RG TPDV1025RG TPDV1225RG

Blocking voltage VDRM/VRRM 800 V 1000 V 1200 V

On-state current IT(RMS) 25 A
Gate current IGT 150 mA

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Characteristics TPDVxx25

1 Characteristics

Table 2. Absolute maximum ratings (limiting values)

Symbol Parameter Value Unit

IT(RMS) On-state rms current (180° conduction angle) Tc = 85 °C 25 A

tp = 2.5 ms 390
Non repetitive surge peak on-state
ITSM tp = 8.3 ms Tj = 25 °C 250 A
current
tp = 10 ms 230
I2 t 2
I t value for fusing tp = 10 ms Tj = 25 °C 265 A2S
Critical rate of rise of on-state current
dI/dt F = 50 Hz 100 A/µs
IG = 500 mA, dIG/dt = 1 A/µs
TPDV825 800
VDRM
Repetitive peak off-state voltage TPDV1025 Tj = 125 °C 1000 V
VRRM
TPDV1225 1200
Tstg Storage junction temperature range - 40 to + 150
°C
Tj Operating junction temperature range - 40 to + 125
VINS(RMS)(1) Insulation rms voltage 2500 V
1. A1, A2, gate terminals to case for 1 minute

Table 3. Electrical Characteristics (Tj = 25 °C, unless otherwise specified)

Symbol Test conditions Quadrant Value Unit

IGT MAX. 150 mA

VD = 12 V DC, RL = 33 Ω I - II - III
VGT MAX. 1.5 V
VGD VD = VDRM RL = 3.3 kΩ Tj = 125 °C I - II - III MIN. 0.2 V
tgt VD = VDRM IG = 500 mA dIG/dt = 3 A/µs I - II - III TYP. 2.5 µs
IH (1) IT = 500 mA Gate open TYP. 50 mA
I - III 100
IL IG = 1.2 x IGT TYP. mA
II 200
dV/dt Linear slope up to: VD = 67% VDRM Gate open Tj = 125 °C MIN. 2000 V/µs
(1)
VTM ITM = 35 A tp = 380 µs MAX. 1.8 V
Vto (1) Threshold voltage Tj = 125 °C MAX. 1.1 V
Rd(1) Dynamic resistance Tj = 125 °C MAX. 19 mΩ

IDRM Tj = 25 °C 20 µA
VDRM = VRRM MAX.
IRRM Tj = 125 °C 8 mA
(dV/dt)c = 200 V/µs 20
(dI/dt)c (1) Tj = 125 °C MIN. A/ms
(dV/dt)c = 10 V/µs 88
1. For either polarity of electrode A2 voltage with reference to electrode A1.

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TPDVxx25 Characteristics

Table 4. Gate characteristics (maximum values)

Symbol Parameter Value Unit

PG(AV) Average gate power dissipation 1 W

PGM Peak gate power dissipation tp = 20 µs 40 W
IGM Peak gate current tp = 20 µs 8 A
VGM Peak positive gate voltage tp = 20 µs 16 V

Table 5. Thermal resistance

Symbol Parameter Value Unit

Rth(j-a) Junction to ambient 50 °C/W

Rth(j-c) DC Junction to case for DC 1.5 °C/W
Rth(j-c) AC Junction to case for 360 °Conduction angle (F = 50 Hz) 1.1 °C/W

Figure 1. Max. rms power dissipation versus Figure 2. Max. rms power dissipation and
on-state rms current (F = 50Hz). max. allowable temperatures
(curves limited by (dI/dt)c) (Tamb and Tcase) for various Rth
P(W) P(W) Tcase(°C)
40 40
Rth case to ambient - Rth = 1.5°C/W Rth = 1°C/W Rth = 0.5°C/W Rth = 0°C/W 85

30 30 95
α = 180°
α = 120°

20 20 105
α = 90°
α = 60°
180° 115
10 α = 30° α 10
α
IT(RMS)(A) Tamb(°C)
0 0 125
0 5 10 15 20 25 0 20 40 60 80 100 120 140

Figure 3. On-state rms current versus case Figure 4. Relative variation of thermal
temperature impedance versus pulse duration
IT(RMS)(A) K=[Zth(j-c)/Rth(j-c)]
30 1.00

α = 180°
Zth(j-c)
25

20 0.10

15
Zth(j-a)

10 0.01

Tcase(°C) tp(s)
0 0.0
0 25 50 75 100 125 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3

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Characteristics TPDVxx25

Figure 5. Relative variation of gate trigger Figure 6. Non repetitive surge peak on-state
current and holding current versus current versus number of cycles
junction temperature
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] ITSM(A)
2.5
200

2 t = 20 ms
150 One cycle

1.5 IGT
Tj initial=25°C
100
1 IH & IL

50
0.5

Tj(°C) Number of cycles

0 0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
1 10 100 1000

Figure 7. Non-repetitive surge peak on-state Figure 8. On-state characteristics (maximum

current for a sinusoidal pulse and values)
corresponding values of I2t

2
ITSM(A), I t (A s)
2 ITM(A)
1000
1000
Tj initial = 25°C

ITSM
100 Tj=max

I2t

Tj=25°C
10

Tj max.:
Vt0=1.1V
tp(ms) VTM(V)
Rd=19mΩ

100 1
1 2 5 10 1 2 3 4 5 6

Figure 9. Safe turn-off operating area

(dV/dt)c(V/µs)
1000

Tj initial = 25°C

100

10

(dI/dt)c(A/ms)
1
1 10 100

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TPDVxx25 Package information

2 Package information

● Epoxy meets UL94,V0

● Cooling method: C (by conduction)
● Recommended torque value: 0.9 to 1.2 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

Table 6. TOP3 insulated dimensions

Dimensions

Ref. Millimeters Inches

Min. Max. Min. Max.

H A
A 4.4 4.6 0.173 0.181
R B
ØL
B 1.45 1.55 0.057 0.061
C 14.35 15.60 0.565 0.614
K
D 0.5 0.7 0.020 0.028
F G
E 2.7 2.9 0.106 0.114
F 15.8 16.5 0.622 0.650
G 20.4 21.1 0.815 0.831
P
C H 15.1 15.5 0.594 0.610
J 5.4 5.65 0.213 0.222

J J
D K 3.4 3.65 0.134 0.144
E
ØL 4.08 4.17 0.161 0.164
P 1.20 1.40 0.047 0.055
R 4.60 typ. 0.181 typ.

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Ordering information TPDVxx25

3 Ordering information

Table 7. Ordering information

Order code Marking Package Weight Base qty Delivery mode

TPDV825RG TPDV825
TOP3
TPDV1025RG TPDV1025 4.5 g 30 Tube
insulated
TPDV1225RG TPDV1225

4 Revision history

Table 8. Document revision history

Date Revision Changes

30-Mar-2011 1 First issue.

13-Jan-2012 2 Updated dI/dt in Table 2 and added Vto and Rd to Table 3.

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TPDVxx25

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