May Jun 2019
May Jun 2019
May Jun 2019
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P5403 [Total No. of Pages : 2
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M.E. (E &TC) (VLSI & Embedded Systems)
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ANALOG CMOS DESIGN
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(2017 Pattern)
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Time : 3 Hours] [Max. Marks : 50
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Instructions to the candidates :
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C
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3) Assume suitable data if necessary.
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Q1) a) How does MOSFET behave as PN diode? What are its applications?
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Give the expressions for its DC current and dynamic resistance. [5]
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b) With the help of a diagram, explain small signal high frequency model for
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Q2) a) Explain the effect of channel length modulation and body effect on
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MOSFET & show how these are accounted in basic small signal model.
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[4]
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What is need of voltage/current references? Explain in detail the concept
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of BGR with its necessity. [4]
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Q3) a) What do you mean by large signal, small signal analysis? Draw the
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the expression for Gmd, ICMR, CMRR and 3dB frequency. [5]
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op amp. [3]
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Q4) a) Compare Active load, Current source load and Push-pull inverter with
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respect to important performance parameters. [4]
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b) What is CS-CG cascode amplifier, draw its schematic and discuss its
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advantages/disadvantages over single stage amplifier. [4]
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c) What is effect of source degeneration resistance on the voltage gain of
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CS amplifier? [2]
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Q5) a) 4/0 13
List and explain important static and dynamic characteristics of
comparator. [3]
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c) How propagation delay is related with slew rate, derive the relation. [2]
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Q6) a) Draw and Explain Following Analog Circuits (Any Two) : [5]
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ii) Single ended and double ended CMOS differential amplifiers.
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b) Write a note on stability of Op amp and its effect on slew rate. What are
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Q7) a) Explain differential LNA with neat circuit diagram. [4]
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b) With the help of schematic in detail, explore the design steps of single
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ended LNA. [4]
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