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    CS13001 Cansheng

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    Games ELITE
    This document provides specifications for a TO-92 plastic-encapsulated transistor including maximum ratings, electrical characteristics, and typical characteristics. It lists parameters such as collector-base breakdown voltage, DC current gain, collector-emitter saturation voltage, and transition frequency.

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    CS13001 Cansheng

    Uploaded by

    Games ELITE
    16 views2 pages
    This document provides specifications for a TO-92 plastic-encapsulated transistor including maximum ratings, electrical characteristics, and typical characteristics. It lists parameters such as collector-base breakdown voltage, DC current gain, collector-emitter saturation voltage, and transition frequency.

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    CS13001-CANSHENG

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    This document provides specifications for a TO-92 plastic-encapsulated transistor including maximum ratings, electrical characteristics, and typical characteristics. It lists parameters such as collector-base breakdown voltage, DC current gain, collector-emitter saturation voltage, and transition frequency.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    16 views2 pages

    CS13001 Cansheng

    Uploaded by

    Games ELITE
    This document provides specifications for a TO-92 plastic-encapsulated transistor including maximum ratings, electrical characteristics, and typical characteristics. It lists parameters such as collector-base breakdown voltage, DC current gain, collector-emitter saturation voltage, and transition frequency.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    TO-92 Plastic-Encapsulate Transistors

    CS13001 TRANSISTOR (NPN )


    FEATURES
    power switching applications
    TO-92
    MAXIMUM RATINGS (TA=25
    (TA=25℃ unless otherwise noted)

    Symbol Parameter Value Units


    1. EMITER
    VCBO Collector -Base Voltage 600 V
    2. COLLECTOR
    VCEO Collector-Emitter Voltage 400 V
    3. BASE
    VEBO Emitter-Base Voltage 7 V
    IC Collector Current -Continuous 0.2 A 123
    PC Collector Power Dissipation 0.75 W
    TJ Junction Temperature 150 ℃
    Tstg Storage Temperature -55-150 ℃
    ELECTRICAL CHARACTERISTICS (Tamb=25
    (Tamb=25℃ unless otherwise specified)

    Parameter Symbol Test conditions MIN TYP MAX UNIT

    Collector-base breakdown voltage V(BR)CBO IC= 100μA , IE=0 600 V

    Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 400 V

    Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 7 V

    Collector cut-off current ICBO VCB= 600V , IE=0 100 μA

    Collector cut-off current ICEO VCE= 400V, IB=0 200 μA

    Emitter cut-off current IEBO VEB= 7V, IC=0 100 μA

    hFE(1) VCE= 20V, IC= 20mA 10 40


    DC current gain VCE= 10V, IC= 0.25
    hFE(2) 5
    mA
    Collector-emitter saturation voltage VCE(sat) IC= 50mA, IB= 10 mA 0.5 V

    Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 10mA 1.2 V

    VCE= 20V, IC=20mA f =


    Transition frequency fT 8 MHz
    1MHz

    Fall time tf VCC=45V, IC=50mA 0.3 μs

    Storage time tS IB1= -IB2=5mA 1.5 μs

    CLASSIFICATION OF hFE(1)
    Typical Characteristics CS13001

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