NESS - Nano-Electronic Simulation Software
NESS - Nano-Electronic Simulation Software
NESS - Nano-Electronic Simulation Software
September 2021
1
Outline
1. Introduction
2. NESS Schematic Flowchart and Modules:
2.1. Structure Generator
2.2. Effective Mass Extractor
2.3. Drift-Diffusion Solver
2.4. Kubo-Greenwood Solver
2.5. Coupled Mode-space NEGF Solver
3. Examples
4. Conclusions
2
1. Introduction
§ Device Scaling:
§ Better performance
§ Larger integration
§ Lower power
consumption
§ Lower cost
4
2. NESS: Schematic
Flowchart
§ NESS: Nano-Electronic
Simulation Software
§ Open-ended simulation
environment
5
C. Medina-Bailon et al., Micromachines, 12(6), 2021
2.1. NESS Modules:
Structure Generator
Different Cross-Section shapes + Variability sources: Random Discrete Dopants (RDD),
Line Edge Roughness (LER), and Metal Gate Granularity (MGG)
Auto-correlation function
𝐶 𝑟 = < ∆ 𝑟! ∆ 𝑟 + 𝑟! >
= ∆#" 𝑒 $ #%/'!
Voronoi diagram:
each grain has different
work-functions
9
2.4. NESS Modules:
Kubo-Greenwood
§ Scattering rates Γi:
§ Directly derived from Fermi Golden
Rule
§ Accounts for the 1D Multi-Subband
effects:
§ Acoustic Phonon
§ Optical Phonon
§ Surface Roughness
§ Ionized Impurity
§ Alloy
C. Medina-Bailon et al., Materials, 2019 10
2.5. NESS Modules:
NEGF
§ Poisson-NEGF solver within coupled mode-space
representation
§ Effective mass (EM) and six-band k.p Hamiltonians
implemented
§ Acoustic and optical phonons: Self-consistent Born
approx. (SCBA), so far, within EM approx.
§ Efficiently parallelised using MPI
§ Variability sources, such RDD and LER, are easily
handled by NESS
§ 2D structures (DG-FETs) with periodicity in one-
direction can be also simulated
11
S. Berrada et al., J. Comput. Elec, 19, 1031,2020
-0.4
-2 -1 0 1 2 -1 -0.5 0 0.5 1
k x (1/a)
2.5. NESS Modules:
k x (1/a) Fig. 3. Simulated ON-state current-spectra of the Si-InAs nanowire
in Fig. 1, with uniform doping concentrations. The pink dashed-lines
Si
VGS = -0.8 V
14
C. Medina-Bailon et al., Micromachines, 12(6), 680, 2021
3. Examples:
Variability Using NEGF
(a) (b)
Bias = 0.29V
3nm 3nm
RDD Region
105
7
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Bias = 0.29V
without RDD Bias = 0.29V
Transmission T(E)
10 6 Bias = 0.31V
Current (A/cm )
2
Bias = 0.31V
8
2 ⇥ 1018 4 ⇥ 1018 6 ⇥ 1018 8.4 ⇥ 1018
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4.9 ⇥ 1014
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4
6
1st resonant peak
Bias = 0.31V
4 Bias = 0.29V
2
2
1st valley
Bias = 0.31V
7.2 ⇥ 1011 2 ⇥ 1018 5 ⇥ 1018 8 ⇥ 1018 1 ⇥ 1019
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0 0
0 0.1 0.2 0.3 0.4 0.5 -0.4 -0.2 0 0.2 0.4 0.6 0.8
Bias (Volt) Energy (nm)
15
C. Medina-Bailon et al., Micromachines, 12(6), 680, 2021
3. Examples:
Variability Using NEGF
RTD device with RDD No. 1 RTD device with RDD No. 2 RTD device with RDD No. 3
1075 1075 1057
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Current (A/cm 2)
Current (A/cm 2)
Current (A/cm 2)
v
8
1st resonant peak 3
4 Bias = 0.26V 6
1st resonant peak
Bias = 0.33V 2
4
2
1st valley 1 1st valley
2 Bias = 0.45V
1st valley Bias = 0.34V
Bias = 0.27V (a) (b) (c)
0 0 0
0 0.1 0.2 0.3 0.4 0.5 0 0.1 0.2 0.3 0.4 0.5 0 0.1 0.2 0.3 0.4 0.5
Bias (Volt) Bias (Volt) Bias (Volt)
16
C. Medina-Bailon et al., Micromachines, 12(6), 680, 2021
3. Examples:
NEGF Full-band k.p Method
p-type nanowire
17
H. Carrilo-Nunez et al., Nanotechnology, 32, 020001, 2020
3. Examples:
NEGF Full-band k.p Method
Current Spectrum
in μA/eV
19
Thank you!
[email protected]
@vihardabest
https://www.gla.ac.uk/schools/engineering/staff/vihargeorgiev/
http://web.eng.gla.ac.uk/groups/devmod/
/glasgowuniversity @UofGlasgow
@UofGlasgow UofGlasgow
This project has received funding from the European Union's Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No 860095