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    2SC3990 InchangeSemiconductor

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    Fiaz Ahmad

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    © All Rights Reserved
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    2SC3990 InchangeSemiconductor

    Uploaded by

    Fiaz Ahmad
    3 views3 pages

    Original Title

    2SC3990-InchangeSemiconductor

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    © © All Rights Reserved

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    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    3 views3 pages

    2SC3990 InchangeSemiconductor

    Uploaded by

    Fiaz Ahmad

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    isc Silicon NPN Power Transistor 2SC3990

    DESCRIPTION
    ·High Collector-Emitter Breakdown Voltage-
    : V(BR)CEO= 500V(Min)
    ·High Switching Speed
    ·Wide Area of Safe Operation
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    APPLICATIONS
    ·Designed for switching regulator and general purpose
    applications.

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage 800 V

    VCEO Collector-Emitter Voltage 500 V

    VEBO Emitter-Base voltage 7 V

    IC Collector Current-Continuous 35 A

    ICM Collector Current-Peak 50 A

    IB Base Current-Continuous 12 A

    Collector Power Dissipation


    PC 250 W
    @ TC=25℃

    TJ Junction Temperature 150 ℃

    Tstg Storage Temperature Range -55~150 ℃

    isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


    isc Silicon NPN Power Transistor 2SC3990

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 500 V

    V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 800 V

    V(BR)EBO Emitter-Base Breakdown Voltage IE= 1m A; IC= 0 7 V

    VCE(sat) Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A 1.0 V

    VBE(sat) Base-Emitter Saturation Voltage IC= 16A; IB= 3.2A 1.5 V

    ICBO Collector Cutoff Current VCB= 500V ; IE= 0 10 μA

    IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA

    hFE-1 DC Current Gain IC= 3.2A ; VCE= 5V 15 50

    hFE-2 DC Current Gain IC= 16A ; VCE= 5V 8

    fT Current-Gain—Bandwidth Product IC= 2.4A ; VCE= 10V 18 MHz

    COB Output Capacitance IE= 0 ; VCB= 10V 400 pF

     hFE-1 Classifications

    L M N

    15-30 20-40 30-50

    isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark


    isc Silicon NPN Power Transistor 2SC3990

    NOTICE：
    ISC reserves the rights to make changes of the content herein the datasheet at any time without
    notification. The information contained herein is presented only as a guide for the applications of
    our products.
    ISC products are intended for usage in general electronic equipment. The products are not
    designed for use in equipment which require specialized quality and/or reliability, or in equipment
    which could have applications in hazardous environments, aerospace industry, or medical
    field. Please contact us if you intend our products to be used in these special applications.
    ISC makes no warranty or guarantee regarding the suitability of its products for any particular
    purpose, nor does ISC assume any liability arising from the application or use of any products, and
    specifically disclaims any and all liability, including without limitation special, consequential or
    incidental damages.

    isc website：www.iscsemi.com 3 isc & iscsemi is registered trademark

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