Transistor

2SB0970 (2SB970)
Silicon PNP epitaxial planer type

For low-voltage output amplification

Unit: mm

0.40+0.10
ñ0.05
0.16+0.10
-0.06

3
■ Features

1.50+0.25
-0.05
2.8+0.2
-0.3
● Low collector to emitter saturation voltage VCE(sat).

0.4±0.2
● Mini type package, allowing downsizing of the equipment and

5°
automatic insertion through the tape packing and the magazine 1 2

packing.

(0.65)
(0.95) (0.95)
1.9±0.1
2.90+0.20
-0.05

■ Absolute Maximum Ratings (Ta=25˚C) 10°

Parameter Symbol Ratings Unit

1.1+0.2

1.1+0.3
-0.1

-0.1
Collector to base voltage VCBO –15 V

0 to 0.1
Collector to emitter voltage VCEO –10 V
Emitter to base voltage VEBO –7 V
Peak collector current ICP –1 A 1:Base
Collector current IC – 0.5 A 2:Emitter EIAJ:SC–59
3:Collector Mini3-G1 Package
Collector power dissipation PC 200 mW
Junction temperature Tj 150 ˚C Marking symbol : 1R
Storage temperature Tstg –55 ~ +150 ˚C

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = –10V, IE = 0 –100 nA
Collector to base voltage VCBO IC = –10µA, IE = 0 –15 V
Collector to emitter voltage VCEO IC = –1mA, IB = 0 –10 V
Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V
hFE1*1 VCE = –2V, IC = –0.5A*2 130 350
Forward current transfer ratio
hFE2 VCE = –2V, IC = –1A*2 60
Collector to emitter saturation voltage VCE(sat) IC = –0.4A, IB = –8mA – 0.16 – 0.3 V
Base to emitter saturation voltage VBE(sat) IC = –0.4A, IB = –8mA – 0.8 –1.2 V
Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 130 MHz
Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 22 pF
*2 Pulse measurement

*1h Rank classification

FE1

Rank R S
hFE1 130 ~ 220 180 ~ 350
Marking Symbol 1RR 1RS
Note.) The Part number in the Parenthesis shows conventional
part number.

214
Transistor 2SB0970

PC — Ta IC — VCE VBE(sat) — IC
240 –1.2 –100
IC/IB=50

Base to emitter saturation voltage VBE(sat) (V)

Ta=25˚C
Collector power dissipation PC (mW)

IB=–10mA –30
200 –1.0
–9mA

Collector current IC (A)

–10
–8mA
160 – 0.8 –7mA
–6mA –3
25˚C
–5mA Ta=–25˚C
120 – 0.6 –1
–4mA 75˚C
–3mA – 0.3
80 – 0.4

–2mA – 0.1

40 – 0.2
–1mA
– 0.03

0 0 – 0.01
0 20 40 60 80 100 120 140 160 0 –1 –2 –3 –4 –5 –6 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A)

VCE(sat) — IC hFE — IC fT — I E
–100 600 200
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=50 VCB=–10V
VCE=–2V
Ta=25˚C
180
Forward current transfer ratio hFE

–30

Transition frequency fT (MHz)

500
160
–10
140
400
–3 Ta=75˚C
120
25˚C
–1 300 100

–25˚C 80
– 0.3
Ta=75˚C 200
60
– 0.1 25˚C
40
100
–25˚C
– 0.03 20

– 0.01 0 0
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 1 3 10 30 100
Collector current IC (A) Collector current IC (A) Emitter current IE (mA)

Cob — VCB
80
Collector output capacitance Cob (pF)

IE=0
70 f=1MHz
Ta=25˚C
60

50

40

30

20

10

0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)

215
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