ShenZhen LuGuang Electronic Technology. Co., Ltd.

Awarded ISO9001:2015; ISO14001:2015; IATF16949:2016;

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Features
12N65 • 12A, 650V, RDS(on)=0.54Ω @VGS=10 V
650V N-Channel MOSFET. • Low gate charge ( typical 50.5 nC)
• Low Crss ( typical 12pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
General Description
This Power MOSFET is produced by HSDQ using its own advanced planar stripe DMOS
technology.This advanced technology has been especially tailored to minimize on-state
resistance,provide superior switching performance,and withstand high energy pulse in the
avalanche and commutation mode.
mode These devices are well suited for high efficiency
switched mode power supplies,active power factor correction based on half bridge topology.

2
TO-220F Package

1
2
3
1. Gate 2. Drain 3. Source 3

Symbol
y Parameter Value Units
VDSS Drain-Source Voltage 650 V

Drain Current - Continuous (TC=25°C) 12 A

ID
- Continuous (TC=100°C) 7.6* A
IDM Drain Current - Pulsed (Note 1) 48* A
VGSS Gate-Source Voltage ± 30 V
EAS Single
g Pulsed Avalanche Energy gy ((Note 2)) 659 mJ
IAR Avalanche Current (Note 1) 12 A
EAR Repetitive Avalanche Energy (Note 1) 67 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5 V/ns

Power Dissipation (TC=25°C) 33.2 W

PD
- Derate above 25°C 0.27 W/°C
Tj ,Tstg Operating and Storage Temperature Range -55 to +150 oC

M i
Maximum llead
d ttemperature
t ffor soldering
ld i
TL 300 oC
purposes,1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature

Thermal Characteristics
Symbol Parameter Value Units
RθJC Thermal Resistance, Junction-to-Case 3.77 °C/W
RθJS Thermal Resistance, Case-to-Sink Typ. -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient 48.1 °C/W
 Electrical Characteristics T =25°C unless otherwise noted
C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
Table 2 Maximum ratings
BVDSS Drain-Source Breakdown Voltage VGS=0 V, ID=250 μA 650 V
ΔBVDSS Breakdown Voltage Temperature ID =250 μA, Referenced
0.64 V/°C
/ ΔTJ Coefficient to 25°C

IDSS Zero Gate Voltage Drain Current VDS=650 V, VGS=0 V 1 μA

VDS=520 V, TC=125°C 10 μA

IGSSF Gate Body Leakage Current,

Gate-Body Current Forward VGS=30 V
V, VDS=0 V 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS=-30 V, VDS=0 V -100 nA

On Characteristics
VGS(TH) Gate Threshold voltage VDS=VGS, ID=250 uA 2.0 4.0 V

RDS(On) VGS=10 V, ID=6 A,

Drain-Source on-state resistance 0.54 0.72 Ω
TJ=25°C
VDS=40 VV, ID=6 A
gFS Forward Transconductance 12 S
(Note 4)
Dynamic Characteristics
Ciss Input capacitance 2284 pF
VDS=25 V, VGS=0 V,
Coss Output capacitance 198 pF
f=1.0 MHz
Crss Reverse transfer capacitance 12 pF
Switching
g Characteristics
td(on) Turn On Delay Time 28 ns

tr Rising Time VDD=325 V, ID=12 A, 41 ns

RG=25 Ω
td(off) Turn Off Delay Time (Note 4, 5) 131 ns

tf Fall Time 48 ns

Qg Total Gate Charge 50.5 nC

VDS=520
520 VV, ID=12
12 A
A,
Qgs Gate-Source Charge VGS = 10 V 11.7 nC
(Note 4, 5)
Qgd Gate-Drain Charge 19.5 nC
3 Drain-Source
Thermal characteristics
Diode Characteristics and Maximum Ratings
TableIS3 Thermal
Maximum Continuous Drain-Source
characteristics TO-220 Diode Forward Current 10 A
ISM Maximum Pulsed Drain-Source Diode Forward Current 40 A

VSD Diode Forward Voltage VGS=0 V, IS=12 A 1.2 V

trr Reverse Recovery Time VGS=0 V, IS=12 A, 546 ns

dIF / dt=100 A/μs
Qrr Reverse Recovery Charge Note 4) 4.9 μC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=9.2 mH, IAS=12 A, VDD=50V, RG=25 Ω, Starting TJ=25°C
3 ISD≤12A,
3. ≤12A di/dt ≤200A/us,
≤200A/ VDD ≤ BVDSS, Starting
St ti TJ = 25°C
4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
 Typical Characteristics

Table 7 Reverse diode characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage

g
Drain Current and Gate Voltage Variation with Source Current
and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Typical Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs Temperature vs Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs Case Temperature

Figure 11
11. Transient Thermal Response Curve
Package Dimensions
TO220F