GD10PJK120L2S IGBT Module

STARPOWER
SEMICONDUCTOR IGBT

GD10PJK120L2S
1200V/10A PIM in one-package

General Description
STARPOWER IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.

Features
 Low VCE(sat) NPT IGBT technology
 Low switching losses
 10μs short circuit capability
 VCE(sat) with positive temperature coefficient
 Fast & soft reverse recovery anti-parallel FWD
 Al2O3 Substrate for low thermal resistance

Typical Applications
 Inverter for motor drive
 AC and DC servo drive amplifier
 Uninterruptible power supply

Equivalent Circuit Schematic

©2013 STARPOWER Semiconductor Ltd. 6/2/2013 1/12 Rev.A

GD10PJK120L2S IGBT Module

Absolute Maximum Ratings TC=25℃ unless otherwise noted

IGBT-inverter
Symbol Description Value Unit
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ±20 V
Collector Current @ TC=25℃ 20
IC A
@ TC=100℃ 10
ICM Pulsed Collector Current tp=1ms 20 A
PD Maximum Power Dissipation @ Tj=150℃ 93 W

Diode-inverter
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1200 V
IF Diode Continuous Forward Current 10 A
IFM Diode Maximum Forward Current tp=1ms 20 A

Diode-rectifier
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1600 V
IO Average Output Current 50Hz/60Hz,sine wave 10 A
IFSM Surge Forward Current VR=0V,tp=10ms,Tj=45℃ 150 A
I2t I2t-value,VR=0V,t p=10ms,Tj=45℃ 110 A2s

IGBT-brake
Symbol Description Value Unit
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ±20 V
Collector Current @ TC=25℃ 20
IC A
@ TC=100℃ 10
ICM Pulsed Collector Current tp=1ms 20 A
PD Maximum Power Dissipation @ Tj=150℃ 96 W

Diode-brake
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1200 V
IF Diode Continuous Forward Current 10 A
IFM Diode Maximum Forward Current tp=1ms 20 A

Module
Symbol Description Value Unit
Tjmax Maximum Junction Temperature 150 ℃
Tjop Operating Junction Temperature -40 to +125 ℃
TSTG Storage Temperature Range -40 to +125 ℃
VISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V
F Mounting Force Per Clamp 20 to 50 N

©2013 STARPOWER Semiconductor Ltd. 6/2/2013 2/12 Rev.A

GD10PJK120L2S IGBT Module

IGBT-inverter Characteristics TC=25℃ unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=10A,VGE=15V,
2.45 3.00
Collector to Emitter Tj=25℃
VCE(sat) V
Saturation Voltage IC=10A,VGE=15V,
2.75
Tj=125℃
Gate-Emitter Threshold IC=125μA,VCE=VGE,
VGE(th) 4.4 5.0 6.0 V
Vol tage Tj=25℃
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 1.0 mA
Current Tj=25℃
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 400 nA
Current Tj=25℃
RGint Internal Gate Resistance / Ω
Cies Input Capacitance 795 pF
VCE=30V,f=1MHz,
Reverse Transfer
Cres VGE=0V 25 pF
Capacitance
QG Gate Charge VGE=15V 48 nC
td(on) Turn-On Delay Time 172 ns
tr Rise Time 55 ns
td(off) Turn-Off Delay Time 189 ns
VCC=600V,IC=10A,
tf Fall Time RG=100Ω,VGE=±15V, 312 ns
Turn-On Switching
Eon Tj=25℃ 2.34 mJ
Loss
Turn-Off Switching
Eoff 0.74 mJ
Loss
td(on) Turn-On Delay Time 176 ns
tr Rise Time 58 ns
td(off) Turn-Off Delay Time 199 ns
VCC=600V,IC=10A,
tf Fall Time RG=100Ω,VGE=±15V, 443 ns
Turn-On Switching
Eon Tj=125℃ 2.71 mJ
Loss
Turn-Off Switching
Eoff 0.98 mJ
Loss
tP≤10μs,VGE=15 V,
ISC SC Data Tj=125℃,VCC=900V, 72 A
VCEM≤1200V

©2013 STARPOWER Semiconductor Ltd. 6/2/2013 3/12 Rev.A

GD10PJK120L2S IGBT Module

Diode-inverter Characteristics TC=25℃ unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
Diode Forward IC=10A,VGE=0V,T j=25℃ 1.85 2.30
VF V
Vol tage IC=10A,VGE=0V,T j=125℃ 2.05
Qr Recovered Charge 0.98 μC
Peak Reverse VR=600V,IF=10A,
IRM RG=100Ω,VGE=-15V 6.6 A
Recovery Current
Reverse Recovery Tj=25℃
Erec 0.36 mJ
Energy
Qr Recovered Charge 1.51 μC
Peak Reverse VR=600V,IF=10A,
IRM RG=100Ω,VGE=-15V 8.0 A
Recovery Current
Reverse Recovery Tj=125℃
Erec 0.53 mJ
Energy

Diode-rectifier Characteristics TC=25℃ unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
Diode Forward
VF IC=10A,VGE=0V,Tj=150℃ 1.00 V
Vol tage
IR Reverse Current Tj=150℃,VR=1600V 1.0 mA

©2013 STARPOWER Semiconductor Ltd. 6/2/2013 4/12 Rev.A

GD10PJK120L2S IGBT Module

IGBT-brake Characteristics TC=25℃ unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=10A,VGE=15V,
2.45 3.00
Collector to Emitter Tj=25℃
VCE(sat) V
Saturation Voltage IC=10A,VGE=15V,
2.75
Tj=125℃
Gate-Emitter Threshold IC=125μA,VCE=VGE,
VGE(th) 4.4 5.0 6.0 V
Vol tage Tj=25℃
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 1.0 mA
Current Tj=25℃
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 400 nA
Current Tj=25℃
RGint Internal Gate Resistance / Ω
Cies Input Capacitance 795 pF
VCE=30V,f=1MHz,
Reverse Transfer
Cres VGE=0V 25 pF
Capacitance
QG Gate Charge VGE=15V 48 nC
td(on) Turn-On Delay Time 172 ns
tr Rise Time 55 ns
td(off) Turn-Off Delay Time 189 ns
VCC=600V,IC=10A,
tf Fall Time RG=100Ω,VGE=±15V, 312 ns
Turn-On Switching
Eon Tj=25℃ 2.34 mJ
Loss
Turn-Off Switching
Eoff 0.74 mJ
Loss
td(on) Turn-On Delay Time 176 ns
tr Rise Time 58 ns
td(off) Turn-Off Delay Time 199 ns
VCC=600V,IC=10A,
tf Fall Time RG=100Ω,VGE=±15V, 443 ns
Turn-On Switching
Eon Tj=125℃ 2.71 mJ
Loss
Turn-Off Switching
Eoff 0.98 mJ
Loss
tP≤10μs,VGE=15 V,
ISC SC Data Tj=125℃,V CC=900V, 72 A
VCEM≤1200V

©2013 STARPOWER Semiconductor Ltd. 6/2/2013 5/12 Rev.A

GD10PJK120L2S IGBT Module

Diode-brake Characteristics TC=25℃ unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
Diode Forward IC=10A,VGE=0V,T j=25℃ 1.85 2.30
VF V
Vol tage IC=10A,VGE=0V,T j=125℃ 2.05
Qr Recovered Charge 0.98 μC
Peak Reverse VR=600V,IF=10A,
IRM RG=100Ω,VGE=-15V 6.6 A
Recovery Current
Reverse Recovery Tj=25℃
Erec 0.36 mJ
Energy
Qr Recovered Charge 1.51 μC
Peak Reverse VR=600V,IF=10A,
IRM RG=100Ω,VGE=-15V 8.0 A
Recovery Current
Reverse Recovery Tj=125℃
Erec 0.53 mJ
Energy

NTC Characteristics TC=25℃ unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
R25 Rated Resistance 5.0 kΩ
∆R/R Deviation of R100 TC=100℃,R100=493.3Ω -5 5 %
P25 Power Dissipation 20.0 mW
R2=R25exp[B25/50(1/T2-
B25/50 B-value 3375 K
1/(298.15K))]

Module Characteristics TC=25℃ unless otherwise noted

Symbol Parameter Min. Typ. Max. Unit
LCE Stray Inductance 30 nH
RCC’+EE’ Module Lead Resistance,Terminal to Chip 8.00
mΩ
RAA’+CC’ @ TC=25℃ 6.00
Junction-to-Case (per IGBT-inverter) 1.338
Junction-to-Case (per Diode-inverter) 2.077
RθJC Junction-to-Case (per Diode-rectifier) 2.094 K/W
Junction-to-Case (per IGBT-brake-chopper) 1.306
Junction-to-Case (per Diode-brake-chopper) 1.955
Case-to-Sink (per IGBT-inverter) 0.894
Case-to-Sink (per Diode-inverter) 1.387
RθCS Case-to-Sink (per Diode-rectifier) 1.399 K/W
Case-to-Sink (per IGBT-brake-chopper) 0.872
Case-to-Sink (per Diode-brake-chopper) 1.306
RθCS Case-to-Sink 0.058 K/W
G Weight of Module 24 g

©2013 STARPOWER Semiconductor Ltd. 6/2/2013 6/12 Rev.A

 GD10PJK120L2S IGBT Module

20 20

18 VGE=15V 18 VCE=20V

16 16

14 14
25℃
12 12
IC [A]

IC [A]
10 10
125℃
8 8 125℃

6 6

4 4 25℃
2 2

0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 5 6 7 8 9 10
VCE [V] VGE [V]

Fig 1. IGBT-inverter Output Characteristics Fig 2. IGBT-inverter Transfer Characteristics

7 4
VCC=600V VCC=600V
6 RG=100Ω 3.5 IC=10A
VGE=±15V VGE=±15V
Tj=125℃ 3 Tj=125℃
5
EON
2.5
4
E [mJ]

E [mJ]

2
EON
3
1.5
2
1
EOFF
1 0.5
EOFF

0 0
0 2.5 5 7.5 10 12.5 15 17.5 20 0 25 50 75 100 125 150 175 200
IC [A] RG [Ω]

Fig 3. IGBT-inverter Switching Loss vs. IC Fig 4. IGBT-inverter Switching Loss vs. RG

©2013 STARPOWER Semiconductor Ltd. 6/2/2013 7/12 Rev.A

 GD10PJK120L2S IGBT Module

22 10
20
Module
18
16
14 IGBT

ZthJC [K/W]
12
IC [A]

1
10
8
6
4 RG=100Ω
i: 1 2 3 4
VGE=±15V ri[K/W]: 0.0916 0.1786 0.5479 0.5199
τi[s]: 0.0005 0.005 0.05 0.2
2 Tj=125℃
0 0.1
0 350 700 1050 1400 0.001 0.01 0.1 1 10
VCE [V] t [s]

Fig 5. IGBT-inverter RBSOA Fig 6. IGBT-inverter Transient Thermal Impedance

20 0.8

18
0.7
16
0.6 EREC
14
0.5
12 25℃
E [mJ]
IF [A]

10 125℃ 0.4

8
0.3
6 VCC=600V
0.2 RG=100Ω
4 VGE=-15V
0.1 Tj=125℃
2

0 0
0 0.5 1 1.5 2 2.5 3 0 2.5 5 7.5 10 12.5 15 17.5 20
VF [V] IF [A]

Fig 7. Diode-inverter Forward Characteristics Fig 8. Diode-inverter Switching Loss vs. IF

©2013 STARPOWER Semiconductor Ltd. 6/2/2013 8/12 Rev.A

 GD10PJK120L2S IGBT Module

0.9 10

0.8

0.7
Diode
0.6 EREC

ZthJC [K/W]
0.5
E [mJ]

1
0.4

0.3
VCC=600V
0.2 IF=10A
i: 1 2 3 4
VGE=-15V ri[K/W]: 0.1422 0.2772 0.8507 0.8070
0.1 τi[s]: 0.0005 0.005 0.05 0.2
Tj=125℃
0 0.1
0 25 50 75 100 125 150 175 200 0.001 0.01 0.1 1 10
RG [Ω] t [s]

Fig 9. Diode-inverter Switching Loss vs. RG Fig 10. Diode-inverter Transient Thermal Impedance

20 20

18 18 VGE=15V

16 16

14 14
25℃
12 150℃ 12
IC [A]
IF [A]

10 10
125℃
8 25℃ 8

6 6

4 4

2 2

0 0
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 0.5 1 1.5 2 2.5 3 3.5 4
VF [V] VCE [V]

Fig 11. Diode-rectifier Forward Characteristics Fig 12. IGBT-brake Output Characteristics

©2013 STARPOWER Semiconductor Ltd. 6/2/2013 9/12 Rev.A

 GD10PJK120L2S IGBT Module

20 100

18

16

14
10
12 25℃

R [kΩ]
IF [A]

10 125℃
8
1
6

0 0.1
0 0.5 1 1.5 2 2.5 3 0 30 60 90 120 150
VF [V] TC [℃]

Fig 13. Diode-brake Forward Characteristics Fig 14. NTC Temperature Characteristic

©2013 STARPOWER Semiconductor Ltd. 6/2/2013 10/12 Rev.A

GD10PJK120L2S IGBT Module

Circuit Schematic

Package Dimensions
Dimensions in Millimeters

©2013 STARPOWER Semiconductor Ltd. 6/2/2013 11/12 Rev.A

GD10PJK120L2S IGBT Module

Terms and Conditions of Usage

The data contained in this product datasheet is exclusively intended for technically trained
staff. you and your technical departments will have to evaluate the suitability of the product
for the intended application and the completeness of the product data with respect to such
application.

This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the
supply agreement. There will be no guarantee of any kind for the product and its
characteristics.

Should you require product information in excess of the data given in this product data sheet
or which concerns the specific application of our product, please contact the sales office,
which is responsible for you (see www.powersemi.cc), For those that are specifically
interested we may provide application notes.

Due to technical requirements our product may contain dangerous substances. For
information on the types in question please contact the sales office, which is responsible for
you.

Should you intend to use the Product in aviation applications, in health or live endangering or
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If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.

©2013 STARPOWER Semiconductor Ltd. 6/2/2013 12/12 Rev.A