NEET PATTERN TEST

MINOR TEST - 11
Time : 01:00 hour TOPIC- Semiconductor Maximum Marks: 180

Marking System 4. Which one is reverse-biased

fuEu esa ls dkSu lk mRØe vfHkur gS
(+4 for right answer, –1 for wrong)
10V – 5V
15V
– 10V
(a) (b)
1. The temperature coefficient of resistance of a
– 5V
semiconductor
v)Zpkydksa dk çfrjks/k rki xq.kkad
(a) Is always positive – 10V 10V
(c) (d)
ges’kk /kukRed gksrk gS
(b) Is always negative
ges’kk _.kkRed gksrk gS
5. The width of forbidden gap in silicon crystal is 1.1 eV.
(c) Is zero
'kwU; gksrk gS When the crystal is converted in to a N-type
(d) May be positive or negative or zero semiconductor the distance of Fermi level from
/kukRed _.kkRed ;k 'kwU; gks ldrk gS conduction band is
flfydkWu fØLVy esa oftZr ÅtkZ xSi dh pkSM+kbZ 1.1 eV gSA tc
2. Intrinsic semiconductor is electrically neutral. Extrinsic fØLVy dks N- çdkj ds v)Zpkyd esa :ikUrfjr fd;k tkrk gS
semiconductor having large number of current carriers
rks pkyu cS.M ls QehZ Lrj dh nwjh gksxh
would be
(a) Greater than 0.55 eV
uSt v)Zpkyd fo|qrh; #i ls mnklhu gksrk gSA cká
0.55 eV ls vf/kd
v)Zpkyd ftlesa /kkjkokgdska dh la[;k vR;f/kd gSA gksrk gS
(a) Positively charged (b) Equal to 0.55 eV
/kukosf'kr 0.55 eV ds cjkcj
(b) Negatively charged (c) Lesser than 0.55 eV
_.kkosf'kr 0.55 eV ls de
(c) Positively charged or negatively charged depending (d) Equal to 1.1 eV
upon the type of impurity that has been added
1.1 eV ds cjkcj
/kkukosf'kr ;k _.kkosf'kr tks feyk;h x;h v'kqf) dh izÑfr
ij fuHkZj djrk gS
6. Symbolic representation of photodiode is
(d) Electrically neutral
fo|qrh; #i ls mnklhu QksVksMk;ksM dh lkadsfrd igpku gS

(a) (b)
3. Which of the following statements is not true
fuEu esa ls dkSulk dFku vlR; gS
(a) The resistance of intrinsic semiconductors decrease (c) (d)
with increase of temperature
fut v)Zpkyd dk çfrjks/k rkiØe o`f) ds lkFk ?kVrk gS 7. The depletion layer in silicon diode is 1 m wide and the
(b) Doping pure Si with trivalent impurities give P-type knee potential is 0.6 V, then the electric field in the
semiconductors depletion layer will be
Si esa f=la;ksth v’kqf) dh Mksfiax ls P-çdkj dk v)Zpkyd flfydWku Mk;ksM esa vo{k; irZ (Depletion layer) dh eksVkbZ
curk gS 1m gS ,oa uh foHko (Knee potential) dk eku 0.6 V gS rks
(c) The majority carriers in N-type semiconductors are
holes
fo|qr {ks= dk eku gksxk
N-çdkj v)Zpkyd esa cgqla[;d okgd gksy gksrs gSa (a) Zero
(d) A PN-junction can act as a semiconductor diode (b) 0.6 Vm–1
,d PN lfU/k v)Zpkyd Mk;ksM ds tSlk O;ogkj dj (c) 6  104 V/m
ldrk gS (d) 6  105 V/m

1
8. The current through an ideal PN-junction shown in the 14. The most commonly used material for making transistor
following circuit diagram will be is
fp= esa fn[kk;s x;s ifjiFk esa yxs ,d vkn'kZ PN-lf/k ls VªkaftLVj cukus ds fy, eq[; mi;ksxh inkFkZ gksrk gS
çokfgr /kkjk gS (a) Copper
P N 100 rk¡ck
(b) Silicon
1V 2V flfydkWu
(c) Ebonite
(d) Silver
(a) Zero (b) 1 mA flYoj
(c) 10 mA (d) 30 mA
15. In a common base amplifier the phase difference between
9. If a full wave rectifier circuit is operating from 50 Hz the input signal voltage and the output voltage is
mains, the fundamental frequency in the ripple will be mHk;fu"B vk/kkj ço/kZd ds fy;s fuos'kh flXuy oksYVst ,oa
;fn ,d iw.kZ rjax fn"Vdkjh ifjiFk 50 Hz lIykbZ ls tqM+k gSA fuxZr oksYVst ds chp dk dkykUrj gksrk gS
blls çkIr fuxZr esa ÅfeZdkvkas dh vko`fÙk gksxh
(a) 0 (b)  / 4
(a) 50 Hz (b) 70.7 Hz
(c) 100 Hz (d) 25 Hz (c)  / 2 (d) 

10. In an NPN transistor the collector current is 24 mA. If 16. The combination of ‘NAND’ gates shown here under
80% of electrons reach collector its base current in mA is (figure) are equivalent to
,d NPN VªkaftLVj ds fy, laxzkgd /kkjk 24 mA gS ;fn 80% fp= esa fn[kk;s x;s ‘NAND’ xsVksa dk la;kstu fdl xsV ds
bysDVªkWu laxzkgd fljs rd igq¡prs gksa rks vk/kkj /kkjk dk eku lerqY; gS
¼mA esa ½ gksxk
A
(a) 36 (b) 26
C
(c) 16 (d) 6
B
11. For a common base configuration of PNP transistor
lC
 0 .98 then maximum current gain in common
lE C
A
emitter configuration will be B
lC
mHk;fu"B vk/kkj PNP VªkaftLVj ds fy,  0 .96 gS rks (a) An OR gate and an AND gate respectively
lE
Øe'k% ,d OR xsV ,oa ,d AND xsV
mHk;fu"B mRltZd ifjiFk ds fy, /kkjk yfC/k dk egÙke eku
(b) An AND gate and a NOT gate respectively
gksxk
Øe'k% ,d AND xsV ,oa ,d NOT xsV
(a) 12 (b) 24
(c) An AND gate and an OR gate respectively
(c) 6 (d) 5
Øe'k% ,d AND xsV ,oa ,d OR xsV
12. In a PNP transistor working as a common-base amplifier, (d) An OR gate and a NOT gate respectively.
current gain is 0.96 and emitter current is 7.2 mA. The Øe'k% ,d OR xsV ,oa ,d NOT xsV
base current is
,d PNP VªkaftLVj tks mHk;fu"B-vk/kkj ço/kZd dh rjg dk;Z 17. The truth table shown in figure is for
djrk gS] ds fy, /kkjk yfC/k 0.96 gS ,oa mRltZd /kkjk 7.2 mA fuEu lR;-lkfj.kh (Truth table) fdl xsV ds fy, gS
gS rks vk/kkj /kkjk dk eku gksxk A 0 0 1 1
(a) 0.4 mA (b) 0.2 mA B 0 1 0 1
(c) 0.29 mA (d) 0.35 mA Y 1 0 0 1
(a) XOR (b) AND
13. If l1 , l2 , l3 are the lengths of the emitter, base and collector (c) XNOR (d) OR
of a transistor then
;fn ,d VªkaftLVj ds mRltZd] vk/kkj ,oa laxzkgd dh yEckbZ 18. How many NAND gates are used to form an AND gate
Øe'k% l1 , l 2 ,oa l3 gS rc ,d AND xsV çkIr djus ds fy;s fdrus NAND xsVksa dh
(a) l1  l2  l3 (b) l3  l2  l1 vko';drk gksxh
(c) l3  l1  l2 (d) l3  l1  l2 (a) 1 (b) 2
(c) 3 (d) 4

2
19. What will be the input of A and B for the Boolean 23. In semiconductor the concentrations of electrons and
holes are 8  1018/m3 and 5  1018/m respectively. If the
expression ( A  B)  ( A  B)  1
mobilities of electrons and hole are 2.3 m2/volt-sec and
cwfy;u O;atd ( A  B)  ( A  B)  1 ds fy;s A rFkk B ds fuos'kh 0.01 m2/volt-sec respectively, then semiconductor is
,d v)Zpkyd esa bysDVªkWuksa ,oa gksyksa dk ?kuRo Øe'k% 8 
D;k gksaxs
1018/m3 ,oa 5  1018/m gS ,oa budh xfr'khyrk Øe'k% 2.3
(a) 0, 0 (b) 0, 1
m2/volt-sec ,oa 0.01 m2/volt-sec gS rks pkyd fdl çdkj dk
(c) 1, 0 (d) 1, 1
gS
(a) N-type and its resistivity is 0.34 ohm-metre
20. A silicon speciman is made into a P-type semi-conductor N-çdkj dk ,oa bldh çfrjks/kdrk 0.34 ohm-metre gS
by dopping, on an average, one Indium atom per (b) P-type and its resistivity is 0.034 ohm-metre
5  10 7 silicon atoms. If the number density of atoms in P-çdkj dk ,oa bldh çfrjks/kdrk 0.034 ohm-metre gS
(c) N-type and its resistivity is 0.034 ohm-metre
the silicon specimen is 5  10 28 atoms / m 3 then the
N-çdkj dk ,oa bldh çfrjks/kdrk 0.034 ohm-metre gS
number of acceptor atoms in silicon per cubic centimetre
(d) P-type and its resistivity is 3.40 ohm-metre
will be
P-çdkj dk ,oa bldh çfrjks/kdrk 3.40 ohm-metre gS
flfydkWu ds ,d uewus dks P–çdkj dk v/kZpkyd cuk;k x;k
gSA blds fy;s flfydkWu ds çR;sd 5  10 7 ijek.kqvksa esa vkSlru 24. A sinusoidal voltage of peak value 200 volt is connected to
a diode and resistor R in the circuit shown so that half
bf.M;e ds ,d ijek.kq dks feyk;k (doping) x;k gSA ;fn
wave rectification occurs. If the forward resistance of the
flfydkWu ds uewus dk ijek.kq la[;k ?kuRo 5  10 28 diode is negligible compared to R the rms voltage (in volt)
ijek.kq@ehVj3 gks rks flyhdkWu ds çfr ?ku lseh esa xzkgh across R is approximately
,d v)Zpkyd Mk;ksM v)Zrjax fn"Vdkjh ds :i esa dk;Zjr~ gS
ijek.kqvksa dh la[;k gksxh
ftlls ,d çfrjks/k R tqM+k gS ,oa 200V f'k[kj (Peak) eku dk
(a) 2 .5  10 30 atoms / cm 3 (b) 1 . 0  10 13 atoms / cm 3 ,d çR;korhZ oksYVst vkjksfir gSA ;fn Mk;ksM ds vxz çfrjks/k
(c) 1 . 0  10 15 atoms / cm 3 (d) 2 .5  10 36 atoms / cm 3 dk eku çfrjks/k R dh rqyuk esa de gks rks R ij mRié rms
oksYVst (oksYV esa) dk eku yxHkx gksxk
21. In the circuit, if the forward voltage drop for the diode is
0.5V, the current will be
fuEu ifjiFk esa] ;fn Mk;ksM ds fy, vxz vfHkufr oksYVst iru E0= 200 Volt R
0.5V gks] rks /kkjk gksxh
0.5V
(a) 200 (b) 100
200
(c) (d) 280
8V 2.2K 2

25. The circuit shown in following figure contains two diode

(a) 3.4 mA (b) 2 mA D1 and D2 each with a forward resistance of 50 ohms and
(c) 2.5 mA (d) 3 mA with infinite backward resistance. If the battery voltage is
6 V, the current through the 100 ohm resistance (in
22. A P-type semiconductor has acceptor levels 57 meV above amperes) is
the valence band. The maximum wavelength of light
fp= esa fn[kk;s x;s ifjiFk esa nks Mk;ksM D1 ,oa D2 tqM+s gSa ftudh
required to create a hole is (Planck’s constant h =
vxz vfHkufr vkSj i'p vfHkufr esa çfrjks/k Øe'k% 50  ,oa
vuUr gSA ;fn cSVjh oksYVst 6 V gks rks 100  çfrjks/k ls
6 .6  10 34 J-s)
çokfgr /kkjk ¼,fEi;j esa½ gksxh
,d P-çdkj ds v)Zpkyd esa xzkgh Lrj la;kstdrk cSaM ls 57 150
meV Åij fLFkr gSA ,d gksy mRié djus ds fy, vko';d
D1
çdk'k dh vf/kdre rjaxnS/;Z gksxhA ¼Iykad fLFkjkad h = 50

6 .6  10 34 J-s) D2
100
3
(a) 57 Å (b) 57  10 Å
6V
(c) 217100 Å (d) 11 .61  10 33 Å (a) Zero (b) 0.02
(c) 0.03 (d) 0.036

3
26. Find VAB 29. The resistance of a germanium junction diode whose
VAB dk eku Kkr djsa V  I is shown in figure is (Vk  0 . 3 V )
,d tesZfu;e ds lfU/k Mk;ksM ds fy, V  I oØ dks fp= esa
10 fn[kk;k x;k gSA rc bldk izfrjks/k gS (Vk  0. 3 V )
30V
I
VAB 10mA
10 10

(a) 10 V (b) 20 V
(c) 30 V (d) None of thes 
V
Vk 2.3V

27. Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. (a) 5 k (b) 0.2 k
In the following figure if Ge diode connection are  10 
(c) 2.3 k (d)  k 
 2 .3 
reversed, the valve of V0 changes by
tesZfu;e Mk;ksM ,oa flfydkWu Mk;ksM Øe'k% 0.3 V ,oa 0.7 V 30. In the half-wave rectifier circuit shown. Which one of the
oksYV ij pkyu djrs gSaA fn;s x;s fp= esa ;fn tesZfu;e Mk;ksM following wave forms is true for VCD , the output across C
ds dusD'ku ifjofrZr dj fn;s tk;sa rc V0 ds eku esa fdruk and D?
fn[kk;s x;s v)Z rjax fn"Vdkjh ifjiFk esa, VCD , (C ,oa D ds
ifjorZu gksxk
fljksa ij fuxZr½ ds fy, fuEu esa ls dkSulk rjax :i lgh gS
Ge
A C
V0
P Q VCD RL
12 V
Si 5 k
B D

(a) 0.2 V (b) 0.4 V

(c) 0.6 V (d) 0.8 V
(a) (b)
28. For the transistor circuit shown below, if  = 100, voltage
drop between emitter and base is 0.7 V then value of VCE
will be
fn;s x;s ifjiFk esa ç;qä VªkaftLVj dh /kkjk yfC/k  = 100, (c) (d)
mRltZd vkSj vk/kkj ds e/; foHko eas fxjkoV 0 .7 V gS rks VCE
31. The i-V characteristic of a P-N junction diode is shown
dk eku gksxk below. The approximate dynamic resistance of the P-N
junction when a forward bias of 2volt is applied
100  ,d P-N lfU/k Mk;ksM ds i-V vfHkyk{kf.kd dks uhps fn[kk;k x;k
C
gSA tc Mk;ksM dks 2volt ls vxz ok;flr fd;k tkrk gS rc
8.6 k
18 V bldk xfrd izfrjks/k gS, yxHkx
VCE
B i (mA)
E
800
5V
400

(a) 10 V (b) 5 V
(c) 13 V (d) 0 V 2 2.1 V (volt)

(a) 1  (b) 0.25 

(c) 0.5  (d) 5 

4
32. The given figure shows the wave forms for two inputs A (a) X is P-type, Y is N-type and the junction is
and B and that for the output Y of a logic circuit. The logic
forward biased.
circuit is
fp= esa ,d ykWftd ifjiFk ds fuos'k A rFkk B fuxZr ds fy, X , P-izdkj dk, Y, N-izdkj dk rFkk laf/k vxz
rjax :i esa fn[kk;s x;s gSa rc ykWftd ifjiFk gS ck;flr gSA
(b) X is N-type, Y is P-type and the junction is
(A)
forward biased.
O T1 T2 T3 T4 t X , N-izdkj dk, Y, P-izdkj dk rFkk laf/k vxz
ck;flr gSA
(B) (c) X is P-type, Y is N-type and the junction is
reverse biased.
O T1 T2 T3 T4 t
X , P-izdkj dk, Y, N-izdkj dk rFkk laf/k mRØe

(Y)
ck;flr gSA
(d) X is N-type, Y is P-type and the junction is
O T1 T2 T3 T4 t reverse biased.
(a) An AND gate X , N-izdkj dk, Y, P-izdkj dk rFkk laf/k mRØe
,d AND xsV
(b) An OR gate ck;flr gSA
,d OR xsV
(c) A NAND gate 35. In the following common emitter circuit if
,d NAND xsV
 = 100, vCE= 7V, VBE = Negligible, RC = 2k
(d) An NOT gate
,d NOT xsV then IB = ?

33. What will be the voltage gain of an amplifier

fuEu mHk;fu"B mRltZd ifjiFk esa] ;fn  = 100,
with 8% positive feedback if voltage gain vCE=7V, VBE= ux.;, RC = 2k gS] rks IB = ?
without feedback is 10 : iB iC
,d 8% /kukRed fQMcsd okys ,fEyQk;j dh foHkoyfC/k RC
15V

Kkr dhft,] ;fn fcuk fQMcsd ds foHkoyfC/k dk eku 10 RB

C
gSA
(a) 12.5 (b) 50 B

(c) 100 (d) none E

34. A semiconductor X is made by doping a germanium

crystal with arsenic (Z = 33). A second
semiconductor Y is made by doping germanium (a) 0.01 mA (b) 0.04 mA
with indium (Z = 49). The two are joined end to end (c) 0.02 mA (d) 0.03 mA
and connected to a battery as shown. Which of the
following statements is correct ?
36. In the circuit shown, the base current is 30 A.
,d v)Zpkyd X, tesZfu;e fØLVy dk vklsZfud
(Z = 33) ds lkFk vifefJr djds cuk;k x;k gS rFkk The value of R1 is : (VBE is negligible)
f}rh; v)Zpkyd Y dks bf.M;e (Z = 49) ds lkFk fn;s x;s ifjiFk esa] vk/kkj /kkjk 30 A gSA R1 dk eku
vifefJr djds cuk;k x;k gSA ;s nksuks fljs ls fljs ij
gS: (VBE ux.; gSA)
rFkk fp=kuqlkj cSVjh ls tqM+s gq, gS] rks fuEu esa ls dkSulk
dFku lgh gS \

(a) 3k  (b) 30k

(c) 300 k  (d) 3 × 104 k

5
37. A waveform shown when applied to the following 40. In the energy band diagram of a material shown
circuit will produce which of the following output below, the open circles and filled circles denote
waveform ? [Assuming ideal diode configuration holes and electrons respectively. The material is-
and R1 = R2]
,d inkFkZ dh bl ÅtkZ cSaM vkd`fr esa fNnzksa dks [kqys
,d rjax çk#i tks n'kkZ;s vuqlkj fuEu ifjiFkk esa
o`Ùkksa esa vkSj bysDVªkWuksa dks dkyk Hkjs o`Ùkksa ls fn[kk;k x;k
tksM+us ij dkSulk fuxZr rjaxçk#i mRikfnr djssxk ¼ekuk
Mk;ksM foU;kl vkn'kZ o R1 = R2 gS½ % gSA ;g inkFkZ gksxk -
EC

Eg

EV
(a)
(a) an n-type semiconductor
n-izdkj dk v)Zpkyd
(b) a p-type semiconductor
p-izdkj dk v)Zpkyd
(b) (c) an insulator
fo|qr jks/kh inkFkZ
(d) a metal
dksbZ /kkrq
(c)
41. A transistor is operated in common-emitter
configuration at Vc = 2V such that a change in the
base current from 100 µA to 200 µA produces a
change in the collector current from 5mA to
(d)
10mA. The current gain is-
38. What is the voltage gain in a common emitter ,d VªkaftLVj mHk;fu"B mRltZd vfHkfoU;kl esa
amplifier, where input resistance is 3  and load Vc = 2V ij bl izdkj dk;Zjr gS fd vk/kkj /kkjk esa
resistance RL = 24,  = 0.6 : 100 µA ls 200 µA rd ifjorZu djus ij laxzkgd èkkjk
,d mHk;fu"B mRltZd izo/kZd dk oksYVrk ykHk D;k esa 5mA ls 10mA rd ifjorZu gksrk gSA /kkjk ykHk gS -
gksxk] tgk¡ fuos'kh izfrjks/k 3 o yksM+ izfrjks/k RL = (a) 50 (b) 75
24 gS ( = 0.6) : (c) 100 (d)150
(a) 8.4 (b) 4.8
(c) 2.4 (d) 480
42. A zener diode, having breakdown voltage equal
39. In the following circuit the equivalent resistance to 15 V, is used in a voltage regulator circuit
between A and B is : shown in figure. The current through the diode is:
fuEu ifjiFk esa A rFkk B ds e/; rqY; izfrjks/k gS % 15 V ds cjkcj Hkatd oksYVrk okys ,d tsuj Mk;ksM dk
mi;ksx fp=kuqlkj oksYVst jsXkwysVj ifjiFk esa fd;k tkrk
gSA Mk;ksM ls /kkjk gS:
+
250 
20 20 V 1k
(a)  15 V
3
(b) 10  –
(c) 16  (a) 5 mA (b) 10 mA
(d) may be (1) may be (3) (c) 15 mA (d) 20 mA
(1) ;k (3) gks ldrk gS

6
43. A pure semiconductor has equal electron and 45. Which of the following is the correct graph
hole concentration of 1016 m–3. Doping by indium showing V - I characteristics for an ideal PN
increases nh to 4.5 × 1022 m–3, what is ne in the junction diode?

doped semiconductor ? fuEu esa ls dkSulk ,d vkn'kZ PN lfU/k Mk;ksM ds fy,

,d 'kq) v)Zpkyd esa bysDVªkWu rFkk gkWy lkUnzrk 1016 V-I vfHkyk{kf.kd dk lgh xzkQ gS \
m–3 ds lkFk leku gSA bf.M;e }kjk vifeJ.k ls nh, V V

4.5 × 1022 m–3 rd c<+ tkrk gS] vifefJr v)Zpkyd

I
esa ne D;k gS ?
(a) I (b)
(a) 106 m–3 (b) 1022 m–3. V
V
1022
(c) m –3 (d) 4.5 × 1022 m–3 I
4.5  1022 I

(c) (d)
44. In the network shown,

iznf'kZr ifjiFk esa]

D1
4

D2

+ –
5V

(i) the potential difference across D2 is 5 V

D2 ds fljksa ij foHkokUrj 5 V gksxkA

(ii) current through resistor equals 1.25 A

izfrjks/k esa ls izokfgr /kkjk 1.25 A gksxhA
(iii) current through diode D1 is 1.25 A

Mk;ksM D1 esa ls izokfgr /kkjk 1.25 A gksxhA

(iv) current through diode D2 is 1.25 A

Mk;ksM D2 esa ls izokfgr /kkjk 1.25 A gksxhA

(a) (i), (ii) (b) (ii), (iii)
(c) (iii), (iv) (d) (i), (iv)