PHY 321, 2022F

Experiment 8
Transistor Characteristics
1 Motivation
Like diodes, transistors are a fundamental element of modern electronics. They are used as am-
plifiers in signal processing and as voltage-controlled switches. They are the building block for
operational amplifier integrated circuits used in a wide array of linear and nonlinear circuit appli-
cations. As switches, they are used to construct gates in digital logic circuitry.

2 Background
A transistor is a 3-terminal “active” electronic component, meaning one that behaves as if it has an
internal source (current or voltage). There are two main categories of transistors, bipolar-junction
(BJT) and field-effect (FET). Each is based on P-N semiconductor junctions. The BJT behaves as
a current-controlled current source, and the FET behaves as a voltage-controlled current source.
This makes them useful as voltage and current amplifiers. Both can be used as switches. The
MOSFET version of the FET has enormous input resistance and is preferred for constructing logic
gates.
In this experiment you will investigate the basic properties of the PNP version of the BJT and the
N-channel version of the junction field-effect transistor (JFET). The part schematics and package
illustrations for these are shown in Fig. 1.

CAUTION! It is easy to get confused when you turn the transistors over to install them in the
socket on the circuit board. You are now looking at the top.

E D
B
G
C S

Figure 1: Circuit schematics and lead diagrams for bipolar-junction PNP (2N3906) and
N-Channel JFET (2N5486). It is standard to show aa bottom view of the leads for transistors
(and vacuum tubes). Perversely, integrated circuits are always shown from the top.
3 Equipment
For this experiment, you will use:
• One Topward dual DC power supply, set for independent supplies (slide switches)
• Two DMM4020 digital multimeters
• Two Keithley digital multimeters
• One circuit board for testing transistors
• One ELC variable resistance box
• One 2N3906 PNP BJT transistor (parts cabinet)
• One 2N5486 N-CHAN JFET transistor (parts cabinet)

1 Page 1/10
Exp 8: Transistor Characteristics PHY 321, 2022F

C IB
VCE V B −
A 10 kΩ + V0
100 kΩ
E VBE
V IE
A

Figure 2: Circuit for characterizing a bipolar junction transistor. Note the polarity of the DC
voltage source, which is shown appropriate for a PNP transistor. The polarity would be opposite
when working with an NPN transistor.

4 Procedure
1. The Bipolar Junction Transistor (2N3906): The schematic for the circuit board for
testing transistors is shown in Fig. 2. To complete the circuit, you will first add the four
meters shown in the schematic before adding the DC voltage supply. Use a Keithley DMM
on the 200 µA scale to measure IB . Use the other Keithley DMM to measure IE . Use the two
Tektronix DMM’s to measure VCE and VBE (via the VΩ HI-LO inputs on the left). Please
be careful setting up the meters! A current meter has very low (ideally zero) resistance
and must be connected in series within a branch of a circuit. If you accidentally place an
ammeter across two points in a circuit, the short circut can cause large current to flow that
damages components.

(a) Begin by measuring IE and VBE as a function of the base current, IB , for a fixed value
of VCE . To do this, complete the circuit as follows: (1) turn the 10 kΩ potentiometer all
the way counter-clockwise until the knob stops, which moves the wiper to ground. (2)
Connect the ammeters noting their polarity for direction of the current. (3) Connect
the voltmeters and the DC voltage supply, being careful to observe polarities. (4) The
circuit is mostly prewired (look at the underside of the board), but you need to add one
banana patch cable between the terminals for V0 and the transistor’s collector. After
double checking your connections, (5) insert the transistor into the socket on the circuit
board and then turn on the source and adjust V0 until VCE = −12 V.
(b) Turning the potentiometer will change the base-to-emitter voltage, VBE , and therefore
the base current IB . Measure and tabulate IE and VBE as a function of IB . Increase IB
in 2 µA steps from 0 < IB < 10 µA and then 10 µA steps from 10 < IB < 50 µA. You
will notice that VBE drifts slowly when IB is increased or decreased. This drift is caused
by heating of the transistor’s P-N junctions, which are sensitive to temperature. Pause
briefly after each change in IB to allow the temperature to stabilize before taking your
readings. Calculate β (aka hf e ) for your data using β = IC /IB and make a graph of β
versus IE .
(c) Measure the input resistance, rin (hie ), as follows: keeping VCE constant (e.g, VCE =
−8 V), set IB = 6 µA and measure IE and VBE then repeat for IB = 10 µA. Calculate

2 Page 2/10
Exp 8: Transistor Characteristics PHY 321, 2022F

the input resistance using Eq. 1. (A typical value is hie = 3.5 kΩ.)
 
δVBE
hie = (1)
δIB VCE =constant

(d) Table 8.1 in Sprott summarizes a comparison of the models for the “ideal” and “real”
transistor with the more complete T -network shown in Fig. 8.5(a). For the “real” transis-
tor, the input resistance, rin , is related to the “transresistance” by rin = (β+1)rtr ≈ βrtr ,
where β = hf e is the current gain. The first row in Table 8.1 gives the equivalents for
hie (the input resistance you found above). In the entry under “T -network”, the base
resistance, rB , is typically small and can be ignored. Also, since rC  rE , the parallel
combination rC ||rE ≈ rE , so hie ≈ βrE . In this approximation, the transresistance,
rtr , is the same as rE . These are used interchangeably in Sprott’s text. Calculate
β = hf e = δIE /δIB for your measurements in step (c) and then determine rtr . Compare
your result with the expected value, rtr ≈ rd ≈ 26 mV/hIE i, where hIE i is the average
of the two values from step (c), and rd is the “dynamic resistance” (Sprott Eq. 8.3).
(e) (Optional, come back if time remains) For signal transistors like the 2N3906, the rela-
tionship between VBE and IE is given approximately by
 
IE = I0 eeVBE /kT − 1 . (2)

The I-V characteristic depends on (absolute) temperature, T , because the electron ther-
mal velocity affects diffusion across the P-N junction. Technically, parameter I0 also
depends on T , but Eq. 2 is a good approximation for fixed T . Make a semi-log plot of IE
vs VBE and verify that the low-current region is linear (in semi-log). You can determine
eVBE /kT from the slope of a linear fit to your data, assuming that eVBE /kT  1. How
does your result compare with the expected value, e/kT ≈ 26 mV for room tempera-
ture? This temperature dependence is interesting physics, but it is rarely important in
transistor applications.

RD =1 kΩ

D
VDS IG
V
G +
A 10 kΩ − − V1
S 100 kΩ + V0
VGS
V
IS
A

Figure 3: Circuit for characterizing a field-effect transistor. Note the polarity of the DC voltage
sources, which are shown appropriate for an N-Channel FET. The polarities would be opposite
when testing a P-Channel FET.

3 Page 3/10
Exp 8: Transistor Characteristics PHY 321, 2022F

2. The Field-Effect Transistor (2N5486): You will now measure the properties of an N-
channel junction field-effect transistor (JFET). The setup is shown in Fig. 3, which is almost
the same as before but with two additions. For a JFET, the potentials between the gate and
drain relative to the source have opposite signs, so you need to add a second DC supply, V1 , to
provide (positive) voltage at the drain. You also need to add resistor RD . Note that the lead
order of the 2N5486 package is different than the 2N3906 package. (In actual applications, the
DC operating point can be established using one DC voltage supply and additional resistors.)

(a) Make sure you ground the negative terminal of the V1 supply and the positive terminal of
the V0 supply. The DMMs measure the source current, IS , the gate current, IG , and the
voltages, VDS and VGS . From Kirchhoff’s current rule, the drain current ID = IS − IG .
After double checking the connections and polarities, turn on the power supplies and set
V0 = −5 V and V1 = 0 V.
(b) An FET can be used as a voltage-controlled variable resistor. The resistance of the drain-
source channel is adjusted by varying the gate voltage, VGS . (Internally this changes the
width of the depletion region.) Turn the potentiometer fully CCW so that VGS = 0.
Now vary VDS (by adjusting V1 ) from 0 V to +2.0 V in 0.2 V steps and from +2.0 V to
+10.0 V in 2.0 V steps. You should see that IG is always very small, hence ID = IS .
Why is IG small? Tabulate your data and make a plot of ID versus VDS . Determine the
resistance of the drain-source channel, RDS , from the ohmic (linear) region of the plot.
(c) Now measure the characteristics of the JFET in the “pinch-off” region where ID is nearly
independent of VDS , i.e., the transistor acts like a current source. This is the region where
a JFET is used as an amplifier. Set VGS = −1.5 V by adjusting the potentiometer, and
then vary VDS from +2.0 V to +20 V in 2.0 V steps. Tabulate your data and make a plot
of ID versus VDS .
(d) In the “pinch-off” region, the JFET behaves like a voltage-controlled current source.
Use your data from steps (b) and (c) for VDS = +10 V to determine the “forward
transconductance”. (A typical value is gf s = 5 mf.)
 
δID
gf s = (3)
δVGS VDS =constant
(e) As a nearly ideal current source, a JFET has a large but finite output resistance, ros (see
the equivalent circuit in Sprott Fig. 7.16). Evalutate the output resistance in the pinch-
off region, ros = δVDS /δID , using your measurements from step (c) with VDS = +10 V
and +20 V.
(f) FET’s (usually MOSFETs) are very useful as switches and gates. The “switch” is closed
when VGS = 0 and open when |VGS | > |VP |, the critical pinch-off voltage (also called
VGS(off) ). With VDS = +12 V, vary the potentiometer to change the gate-source voltage,
VGS . Measure and tabulate ID as a function of VDS by varying VGS = 0 V in −0.5 V
steps up to the critical pinch-off voltage. (You can adjust V1 to maintain VDS = +12 V.)
Plot ID versus VGS and determine the “off” voltage for the JFET. The plot should look
roughly parabolic as VGS approaches VP .

4 Page 4/10
 2N3906 / MMBT3906 / PZT3906
2N3906 MMBT3906 PZT3906

C C

E E
C
C TO-92 B
B B
E SOT-23 SOT-223
Mark: 2A

PNP General Purpose Amplifier

This device is designed for general purpose amplifier and switching
applications at collector currents of 10 µA to 100 mA.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage -40 V
VCBO Collector-Base Voltage -40 V
VEBO Emitter-Base Voltage -5.0 V
IC Collector Current - Continuous -200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N3906 *MMBT3906 **PZT3906
PD Total Device Dissipation 625 350 1,000 mW
Derate above 25°C 5.0 2.8 8.0 mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

© 2010 Fairchild Semiconductor Corporation 2N3906/MMBT3906/PZT3906, Rev A1

 2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = -1.0 mA, IB = 0 -40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = -10 µ A, IE = 0 -40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = -10 µ A, IC = 0 -5.0 V
IBL Base Cutoff Current VCE = -30 V, V BE= -3.0 V -50 nA
ICEX Collector Cutoff Current VCE = -30 V, V BE= -3.0 V -50 nA

ON CHARACTERISTICS
hFE DC Current Gain * IC = -0.1 mA, VCE= -1.0 V 60
IC = -1.0 mA, VCE = -1.0 V 80
IC = -10 mA, VCE = -1.0 V 100 300
IC = -50 mA, VCE = -1.0 V 60
IC = -100 mA, VCE = -1.0 V 30
VCE(sat) Collector-Emitter Saturation Voltage IC = -10 mA, I B = -1.0 mA -0.25 V
IC = -50 mA, I B = -5.0 mA -0.4 V
VBE(sat) Base-Emitter Saturation Voltage IC = -10 mA, IB = -1.0 mA -0.65 -0.85 V
IC = -50 mA, IB = -5.0 mA -0.95 V

SMALL SIGNAL CHARACTERISTICS

fT Current Gain - Bandwidth Product IC = -10 mA, VCE = -20 V, 250 MHz
f = 100 MHz
Cobo Output Capacitance VCB = -5.0 V, IE = 0, 4.5 pF
f = 100 kHz
Cibo Input Capacitance VEB = -0.5 V, IC = 0, 10.0 pF
f = 100 kHz
NF Noise Figure IC = -100 µA, VCE = -5.0 V, 4.0 dB
RS =1.0 kΩ, f=10 Hz to 15.7 kHz

SWITCHING CHARACTERISTICS
td Delay Time VCC = -3.0 V, VBE = -0.5 V, 35 ns
tr Rise Time IC = -10 mA, IB1= -1.0 mA 35 ns
ts Storage Time VCC = -3.0 V, IC = -10 mA 225 ns
tf Fall Time IB1 = IB2 = -1.0 mA 75 ns

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
 2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
(continued)

Typical Characteristics

Typical Pulsed Current Gain Collector-Emitter Saturation

V CESAT - COLLECTOR EMITTER VOLTAGE (V)

vs Collector Current Voltage vs Collector Current
h F E - TYPICAL PULSED CURRENT GAIN

250 0.3
V CE = 1 .0V β = 10
0.25
125 °C
200
0.2

150 0.15 25 °C
25 °C
0.1
100 125°C
- 40 °C
0.05
- 40 °C

50 0
0.1 0.2 0.5 1 2 5 10 20 50 100 1 10 100 200
I C - COLLECTOR CURRE NT (mA) I C - COLLECTOR CURRENT (mA)

Base-Emitter Saturation Base Emitter ON Voltage vs

Voltage vs Collector Current Collector Current
VBE( ON)- BASE EMITTER ON VOLTAGE (V)
V BESAT - BASE EM ITTE R VOLTAGE (V)

1
1 β = 10
- 40 °C
0.8
0.8
- 40 °C
25 °C
125 °C 0.6 25 °C
0.6
125 °C
0.4 0.4

V CE = 1V
0.2 0.2

0 0
1 10 100 200 0.1 1 10 25
I C - COLLECTOR CURRE NT (mA) I C - COLLECTOR CURRENT (mA)

Collector-Cutoff Current Common-Base Open Circuit

vs Ambient Temperature Input and Output Capacitance
100
I CBO - COLLE CTOR CURRENT (nA)

vs Reverse Bias Voltage

V = 25V
CB 10
C obo
10
CAPACITANCE (pF)

1 6

4 C ibo
0.1
2

0.01 0
25 50 75 100 125 0.1 1 10
TA - AMBIE NT TEMP ERATURE (° C) REVERSE BIAS VOLTAGE (V)
 2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
Discrete POWER & Signal
Technologies

2N5484 MMBF5484
2N5485 MMBF5485
2N5486 MMBF5486

D
G TO-92
S SOT-23 S
D
Mark: 6B / 6M / 6H

N-Channel RF Amplifier
This device is designed primarily for electronic switching
applications such as low On Resistance analog switching.
Sourced from Process 50.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

VDG Drain-Gate Voltage 25 V
VGS Gate-Source Voltage - 25 V
IGF Forward Gate Current 10 mA
TJ ,Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N5484 *MMBF5484
PD Total Device Dissipation 350 225 mW
Derate above 25°C 2.8 1.8 mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

ã 1997 Fairchild Semiconductor Corporation

 2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
N-Channel RF Amplifier
(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

OFF CHARACTERISTICS
V(BR)GSS Gate-Source Breakdown Voltage IG = - 1.0 µA, VDS = 0 - 25 V
IGSS Gate Reverse Current VGS = - 20 V, VDS = 0 - 1.0 nA
VGS = - 20 V, VDS = 0, TA = 100°C - 0.2 µA
VGS(off) Gate-Source Cutoff Voltage VDS = 15 V, ID = 10 nA 2N5484 - 0.3 - 3.0 V
2N5485 - 0.5 - 4.0 V
2N5486 - 2.0 - 6.0 V

ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0 2N5484 1.0 5.0 mA
2N5485 4.0 10 mA
2N5486 8.0 20 mA

SMALL SIGNAL CHARACTERISTICS

gfs Forward Transfer Conductance VDS = 15, VGS = 0, f = 1.0 kHz
2N5484 3000 6000 µmhos
2N5485 3500 7000 µmhos
2N5486 4000 8000 µmhos
Re(yis) Input Conductance VDS = 15, VGS = 0, f = 100 MHz
2N5484 100 µmhos
VDS = 15, VGS = 0, f = 400 MHz
2N5485 / 2N5486 1000 µmhos
gos Output Conductance VDS = 15, VGS = 0, f = 1.0 kHz
2N5484 50 µmhos
2N5485 60 µmhos
2N5486 75 µmhos
Re(yos) Output Conductance VDS = 15, VGS = 0, f = 100 MHz
2N5484 75 µmhos
VDS = 15, VGS = 0, f = 400 MHz
2N5485 / 2N5486 100 µmhos
Re(yfs) Forward Transconductance VDS = 15, VGS = 0, f = 100 MHz
2N5484 2500 µmhos
VDS = 15, VGS = 0, f = 400 MHz
2N5485 3000 µmhos
2N5486 3500 µmhos
Ciss Input Capacitance VDS = 15, VGS = 0, f = 1.0 MHz 5.0 pF
Crss Reverse Transfer Capacitance VDS = 15, VGS = 0, f = 1.0 MHz 1.0 pF
Coss Output Capacitance VDS = 15, VGS = 0, f = 1.0 MHz 2.0 pF
NF Noise Figure VDS= 15 V, RG = 1.0 kΩ,
f = 100 MHz 2N5484 3.0 dB
VDS= 15 V, RG = 1.0 kΩ,
f = 400 MHz 2N5484 4.0 dB
VDS= 15 V , RG = 1.0 kΩ,
f = 100 MHz 2N5485 / 2N5486 2.0 dB
VDS= 15 V, RG = 1.0 kΩ,
f = 400 MHz 2N5485 / 2N5486 4.0 dB
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2%
 2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
N-Channel RF Amplifier
(continued)

Typical Characteristics

Transfer Characteristics Channel Resistance vs Temperature

20 1000
V GS(OFF) = -4.5V V DS = 15V

r DS - DRAIN ON RESISTANCE ( Ω)
TA = -55 C
O
500 V GS(OFF) = -1.0V
ID - DRAIN CURRENT (mA)

16
T A = +25 C
O
300
200 -2.5 V
12 T A = +125O C O
TA = -55 C -5.0V
O 100
T A = +25 C
8 -8.0 V
T A = +125O C 50
30
4
20 V DS = 100mV
-2.5 V V =0V
GS
0 10
0 -1 -2 -3 -4 -5 -50 0 50 100 150
VGS- GATE-SOURCE VOLTAGE(V) T A - AMBIENT TEMPERATURE (°C)

Transconductance Common Drain-Source

Characteristics Characteristics
gfs -- TRANSCONDUCTANCE (mmhos)

7 5
5V .0V
O
TA = -55 C V = 15V T A = +25 C
O
DS
-0. -1
I D -- DRAIN CURRENT (mA)

6 O
V
T A = +25 C
4 TYP V GS(OFF)
= -5.0V -1.5
5 T A = +125O C -2.0V
TA = -55 C
O
0V
=
4
3 -2.5V
GS
O
T A = +25 C V
3 T A = +125O C 2 -3.0V

2 -3.5V
V GS(OFF) = -4.5V 1
1 -2.5 V -4.0V

0 0
0 -1 -2 -3 -4 -5 0 0.2 0.4 0.6 0.8 1
VGS- GATE-SOURCE VOLTAGE(V) VDS - DRAIN-SOURCE VOLTAGE(V)

Output Conductance vs Transconductance

Drain Current Parameter Interactions
gos -- OUTPUT CONDUCTANCE (u mhos)

gfs --- TRANSCONDUCTANCE ( mmhos )

r DS -- DRAIN "ON" RESISTANCE ( Ω )

100
-- DRAIN CURRENT ( mA )

O
T A = +25 C gfs, I DSS @ V DS = 15 V, V GS = 0 PULSE
V GS(OFF)
= -5.5V
f = 1.0 kHz 5.0V r DS @ VDS= 100mV, V GS = 0 50
20
V = 5v 10V 30
10 DG 15V
5 20
5 10 20V
15 10
20 15 10
20
1 5
V GS(OFF)
= -3.5V
0.5 3
DSS

20 2
V GS(OFF)
= -1.5V VGS(OFF) @ VGS = 15V, I D= 1nA
I

0.1 10 1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 -1 -2 -3 -5 -7 - 10
I D -- DRAIN CURRENT (mA) V - GATE-SOURCE VOLTAGE(V)
GS