SEMICONDUCTOR KTC9012

TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.
B C

FEATURES
ᴌExcellent hFE Linearity.

A
ᴌComplementary to KTC9013.
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
D 0.45

J
MAXIMUM RATING (Ta=25ᴱ) E
F
1.00
1.27
G 0.85
CHARACTERISTIC SYMBOL RATING UNIT H 0.45
H J _ 0.50
14.00 +
Collector-Base Voltage VCBO -40 V F F K 0.55 MAX
L 2.30
Collector-Emitter Voltage VCEO -30 V M 0.45 MAX
N 1.00
Emitter-Base Voltage VEBO -5 V 1 2 3

C
L

M
Collector Current IC -500 mA 1. EMITTER
2. BASE
Emitter Current IE 500 mA 3. COLLECTOR

Collector Power Dissipation PC 625 mW

Junction Temperature Tj 150 ᴱ TO-92
Storage Temperature Range Tstg -55ᴕ150 ᴱ

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -0.1 ỌA
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 ỌA
DC Current Gain hFE (Note) VCE=-1V, IC=-50mA 64 - 246
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - -0.1 -0.25 V
Base-Emitter Voltage VBE IC=-100mA, VCE=-1V -0.8 -1.0 V
Transition Frequency fT VCB=-6V, IC=-20mA, f=100MHz 150 - - MHz
Collector Output Capacitance Cob VCB=-6V, IE=0, f=1MHz - 7.0 - pF
Note : hFE Classification D:64ᴕ91, E:78ᴕ112, F:96ᴕ135, G:118ᴕ166, H:144ᴕ202, I:176ᴕ246

1994. 5. 11 Revision No : 0 1/1

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