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Unit 2 Problems

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Unit 2 Problems

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vanshikasehrawat1085
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© © All Rights Reserved
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Anna University Solved Problems

Unit - 2: Semiconductor Physics

1. Find the resistance of an intrinsic germanium rod 1cm long, 1mm wide and 1mm
thick at 300K. For germanium ni =2.5 x 1019 m-3;e = 0.39 m2V-1S-1 and h = 0.19
m2V-1S-1 (DECEMBER 2014)

Given data(s): (i) Intrinsic carrier concentration (ni) =2.5 x 1019 m-3
(ii) Electron mobility (e) = 0.39 m2V-1S-1
(iii) Hole mobility (h) = 0.19 m2V-1S-1
(iv) Length of the rod (l) = 1 cm = 1 x 10-2m
(v) Area = breadth x thickness = (1x10-3)x(1x10-3) = 1 x 10-6m
(vi) charge of electron (e) = 1.6 x 10-19 C.

Formula(s): (i) Electrical conductivity of an intrinsic semiconductor  i  ni e( e  h )


l l
(ii) R  (or ) R 
A A
Calculation(s): (i)  i  2.5 10 1.6 1019  (0.39  0.19)  2.321m1 m-3
19

1102
(ii) R   4310
2.32  1106
Answer(s):
(i) Electrical conductivity (σ) = 2.32 Ω-1 m-1
(ii) Resistance (R) = 4310 Ω.

2. A silicon material is uniformly doped with phosphorus atoms at a concentration of


2 x 10-19 m-3. The Mobilities of electrons and holes are 0.05 and 0.12 m2V-1 S-1
respectively. Ni = 1.5 x 1016 m3. Find the electron and hole concentration and its
electrical conductivity. (June 2014).
Given data(s):
Carrier concentration (ni) = 1.5 x 1016 m3.
Donor concentration (ND) = 2 x 1019 m3.

ni 2
Formula(s): p 
ND
n = ND
  eN D  e

Calculations:
ni 2 (1.5 1016 ) 2
Hole concentration p    1.125 1013 m3
ND 2 10 19

Electron concentration n=ND = 2 x 1019 m-3


Electrical conductivity   1.6 1019  2 1019  0.12
σ = 0.384 σ-1 m-1
Result(s)
Hole concentration = 1.125 x 1013 m-3
Electron concentration n= 2 x 1019 m-3
Electrical conductivity σ = 0.384 σ-1 m-1

3. The hall coefficient of a specimen of a doped silicon is found to be 3.66 x 10-4 m3/C.
The resistivity of the specimen is 8.93 x 10-3 Ω m. Find the mobility and density of
the charge carriers (April 2015).
Given data (s):
Hall coefficient (RH) = 3.66 x 10-4 m3/C
Resistivity () =8.93 x 10-3 Ω m

Formula (s):
1
Density of charge carriers n  m-3
RH e

1 R
Mobility e  (or ) e  H
 eni 

Calculation(s):
1
ne  4 19
 1.708 1022 m3
3.66 10 1.6 10

3.66  104
e  3
 0.041m 2V 1S 1
8.93 10
Results:
Carrier concentration (ne) = 1.708 x 1022 m-3
Mobility (e) = 0.041 m2 V-1 S-1.

4. For an intrinsic semiconductor with a band gap of 0.7 eV, determine the position of
EF at T = 300 K if mh* = 6me* (Nov. 2003).
Given data (s):
Eg = 0.7 eV (or) 1.12 x 10-19 J (to convert eV to J multiply by 1.6 x 10-19C)
T = 300 K
mh*
6
me*

Formula (s):

Eg 3kT  m* 
EF   log e  h* 
2 4  me 
Calculation(s):
1.12 1019 3 1.38 10 23  300
EF   log e  6 
2 4

EF  2.41616 1021  5.6 1020 J

2.41616 1021  5.6 10 20


EF  eV
1.6 1019
EF = 0.365 eV
Results:
Fermi Energy EF = 0.365 eV
5. A copper strip 2 cm wide and 1 mm thick is placed in a magnetic field with B = 1.5
Wb/m2 perpendicular to the strip. Suppose a current of 200 A is set up in the strip.
What Hall potential difference would appear across the strip? (N = 8.4 x 10 28
electrons / m3) (May. 2015).
Given data (s):
Current (Ix) = 200 A
Magnetic field (BZ) = 1.5 Wbm-2
No. of electrons / volume (n) = 8.4 x 1028 m-3
Thickness of the sample (t) = 1 x 10-3 m

Formula (s):
RH I X BZ
Hall voltage VH 
t
I X BZ
(or) VH  (Since RH = 1 / ne)
net

Calculation(s):
200 1.5
VH   2.2 105V
8.4 10  (1.6 10 )(110 )
28 19 3

Result(s):
Hall voltage VH = 2.2 x 10-5V

6. Find the Hall coefficient and electron mobility of germanium for a given sample
( length 1 cm, breadth 5mm, thickness 1mm). A current of 5 mA flows from a 1.35 V
supply and develops a Hall voltage of 20 mV across the specimen in a magnetic field
of 0.45 Wb/m2 (May. 2015).

Given data (s):


Current (Ix) = 5mA = 5 x 10-3 A
Magnetic field (BZ) = 0.45 Wbm-2
Hall voltage (VH) = 20 mV = 20 x 10-3 V
Length of the sample (l) = 1 cm = 1 x 10-2 m
Breadth of the sample (b) = 5 mm = 5 x 10-3 m
Thickness of the sample (t) = 1 mm = 1 x 10-3 m

Formula (s):
RA
(i) Resistivity  
l
(ii) Resistance (R) = V / I
(iii) Hall field (EH) = VH / t
(iv) Current density (J) = I / A (or) J = current / (breadth x thickness)
EH
(v) Hall coefficient RH 
J X BZ

RH
(vi) Electron mobility  e 

Calculation(s):
1.35
(i) R   270
(5  103 )

(ii) A  5 103 1103  5 106 m2

270  5 10 6
(iii)    0.135m
1 10 2

20 103
(iv) EH   20Vm 1
1103

5  103
(v) J X  6
 103 Am 2
5  10
20
(vi) RH   0.044m3C 1
10  0.45
3

0.044
(vii) e   0.33m 2V 1S 1
0.135
Result(s):
(i) Resistivity () = 0.135 Ω m
(ii) Hall field (EH) = 20 Vm-1
(iii) Current density (JX) = 103 A/m2
(iv) Hall coefficient (RH) = 0.044 m3 C-1
(v) Mobility (e) = 0.33 m2 V-1 S-1.

7. A semiconductor has a mobility of 500 cm2 V-1 S-1 at T = 300 K. Calculate the
diffusion coefficient.

Given data (s):


Mobility (e) = 500 cm2 V-1 S-1
Temperature (T) = 300 K
Boltzmann constant (k) = 1.38 x 10-23 J K-1
Charge of electron (e) = 1.6 x 10-19 C
Formula(s):
 kT 
D 
 e 
Calculations(s):

 1.38 1023  300 


D 19   500  12.94 cm /sec
2
 1.6  10 
Result:
Diffusion coefficient = 12.94 cm2/sec.

8. A metal-semiconductor contact is formed between gold and n type silicon doped to a


level Nd = 5 x 1016 cm-3 at 300 K. Calculate the ideal Schottky barrier height,
difference between Fermi level and conduction band of semiconductor and built in
potential of the Schottky diode? Assume the work function of gold is 5.1 eV. The
electron affinity in semiconductor is 4.01 eV. The effective density of states function
Nc = 2.8 x 1019 cm-3

Given data(s):
Nc = 2.8 x 1019 cm-3
Nd = 5 x 1016 cm-3
T = 300 K
m = 5.1eV
semi = 4.01 eV
Boltzmann constant (k) = 1.38 x 10-23 J K-1
Charge of electron (e) = 1.6 x 10-19 C

Formula (s):
(i) Ideal Schottky barrier height Bh  m   semi
kT  N c 
(ii) Difference between EF and conduction band of semiconductor n  ln  
e  Nd 
Bh  n
(iii) Build in potential barrier Vbuildin 
e
Calculation(s)

(i) Bh  5.1  4.01  1.09eV

1.38 1023  300  2.8  1019 


(ii) n  ln  16 
 0.164V
1.6 1019  5  10 

1.09  0.164
(iii) Vbuildin   0.926V
1
Result(s):
Ideal Schottky barrier height = 1.09 eV
Difference between EF and conduction band of semiconductor = 0.164 V
Build in potential Vbuild = 0.926 V

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