FT25...

INSULATED HIGH COMMUTATION TRIAC

On-State Current Gate Trigger Current
25 Amp £ 50 mA (16)
INSULATED TO-220AB £ 35 mA (14)
Off-State Voltage
400 V ÷ 800 V
FEATURES
• Provides voltage insulated tab (rated at 2500V RMS)
• Glass/passivated die junctions
• High current Triac
• Low thermal resistance
• High commutation
• High surge current capability
1 • Low forward voltage drop
23 • Solder dip 260ºC, 10s
• Component in accordance to RoHS 2011/65/EU
and WEEE 2002/96/EC
• Meets MSL level 3, per J-STD-020, LF maximum
peak of 260º C
• Certified compliance of UL 1557 Standard for Electrically
Isolated Semiconductors. Fille reference E320541, Vol. 3
MECHANICAL DATA
MT1 (1) • Case: INSULATED TO-220AB. Epoxy meets UL 94V-0
flammability rating.
G (3)
• Polarity: As marked on the body.
• Terminals : Matte tin plated leads, solderable per
MIL-STD-750 Method 2026, J-STD-002 and JESD22-B102.
Consumer grade, meets JESD 201 class 1A whisker test.
TYPICAL APPLICATIONS
MT2 (2) • Used on inductive loads, thanks to their high commutation
performances.

Maximun Ratings and Electrical Characteristics at 25°C

SYMBOL PARAMETER CONDITIONS Value Unit
IT(RMS) RMS On-state Current (full sine wave) All Conduction Angle, Tc = 72 °C 25 A
ITSM Non-repetitive On-State Current Full Cycle, 60 Hz (t = 16.7 ms) 260 A
ITSM Non-repetitive On-State Current Full Cycle, 50 Hz (t = 20 ms) 250 A
2
It Fusing Current tp = 10 ms, Half Cycle 340 A 2s
IGM Peak Gate Current 20 µs max. Tj = 125 °C 4 A
PG(AV) Average Gate Power Dissipation Tj = 125 °C 1 W
dI/dt Critical rate of rise of on-state current IG = 2x IGT, tr £100ns 50 A/µs
f = 120 Hz, Tj = 125 °C
Tj Operating Temperature (-40 +125) °C
Tstg Storage Temperature (-40 +125) °C
Tsld Soldering Temperature 10s max 260 °C
Viso R.M.S. isolation voltage 50/60 Hz 2.500 Vac
sinusoidal waveform

VOLTAGE
SYMBOL PARAMETER Unit
D M N
VDRM/VRRM Repetitive Peak Off State Voltage 400 600 800 V

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Electrical Characteristics at Tamb = 25 °C

SENSITIVITY
SYMBOL PARAMETER CONDITIONS Quadrant Unit
14 16
IGT (1) Gate Trigger Current VD = 12 VDC, RL = 33W, Tj = 25 °C Q1÷Q3 MAX 35 50 mA
VGT Gate Trigger Voltage VD = 12 VDC, RL = 33W, Tj = 25 °C Q1÷Q3 MAX 1.3 V
VGD Gate Non Trigger Voltage VD = VDRM, RL = 3.3 KW, Tj = 125 °C Q1÷Q3 MIN 0.2 V
IH (2) Holding Current IT =100 mA,Gate open, Tj = 25 °C MAX 50 75 mA
IL Latching Current IG = 1.2 IGT, Tj = 25 °C Q1,Q3 MAX 70 80 mA
Q2 MAX 80 100 mA
dV/dt (2) Critical Rate of Voltage Rise VD = 0.67 x VDRM, Gate open MIN 500 1000 V/µs
Tj = 125 °C
(2)
(dI/dt)c Critical Rate of Current Rise (dv/dt)c = 0.1 V/µs Tj = 125 °C MIN - - A/ms
(dv/dt)c = 10 V/µs Tj = 125 °C MIN - -
without snubber Tj = 125 °C MIN 13 22
VTM (2) On-state Voltage IT = 35 Amp, tp = 380 µs, Tj = 25 °C MAX 1.55 V
Vt (o) (2) Threshold Voltage Tj = 125 °C MAX 0.85 V
(2)
rd Dynamic resistance Tj = 125 °C MAX 16 mW
IDRM/IRRM Off-State Leakage Current VD = VDRM, Tj = 125 °C MAX 3 mA
VR = VRRM, Tj = 25 °C MAX 5 µA
Rth(j-c) Thermal Resistance for AC 360° conduction angle 1.7 °C/W
Junction-Case
Rth(j-a) Thermal Resistance 60 °C/W
Junction-Ambient
(1) Minimum IGT is guaranted at 5% of IGT max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.

Part Number Information

F T 25 14 D J 00 TU
FAGOR PACKAGING
FORMING
TRIAC
CASE
VOLTAGE
CURRENT
SENSITIVITY

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Ordering information

PREFERRED P/N PACKAGE CODE DELIVERY MODE BASE QUANTITY UNIT WEIGHT (g)

FT2514MJ 00TU TU TUBE 1000 2.30

Package Outline Dimensions: (mm) INSULATED TO-220AB

Optional with chamfer

DIMENSIONS
REF. Milimeters
Min. Max.
A
øP A 4.32 4.62
E A1 A1 1.21 1.29
A2 2.40 2.70
b 0.80 0.83
Q
H1 b2 1.40 --
Marking code
Format type c 0.42 0.48
D
MC Year code D 15.5 15.68
D1 XXXJ 9.26 9.42
D1
WWY E 10.08 10.24
Test sort name L1 e 2.54 2.54
Week code e1 5.08 5.08
b2 L H1 6.24 6.26
L 12.81 13.81
L1 3.28 4.17
P 3.70 3.80
b c Q 2.75 2.85

e A2

e1

Mounting Torque 0.8 N.m

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Ratings and Characteristics (Ta 25 ºC unless otherwise noted)
Fig. 1: Maximum power dissipation versus Fig. 2: RMS on-state current versus case
RMS on-state current (full cycle) temperature (full cycle).

P (W) IT(RMS)(A)
35 30

30 25

25
20
20
15
15
10
10

5 5

IT(RMS)(A) Tc (°C)
0 0
0 5 10 15 20 25 0 25 50 75 100 125

Fig. 3: Relative variation of thermal Fig. 4: On-state characteristics (maximum

impedance versus pulse duration. values)

K=[Zth / Rth] ITM (A)

1E+0 200
Zth(j-c)
100

1E-1 10
Zth(j-a)

Tj max Tj = 25 °C

Tj max
Vto = 0.85 V
Rd = 16 mW
tp (s) VTM (V)
1E-2 1
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 6: Non repetitive surge peak on-state
Fig. 5: Surge peak on-state current current for a sinusoidal pulse with width:
versus number of cycles tp < 10 ms, and corresponding value of I2t.

I TSM (A) ITSM(A). I2t (A2s)

300 3000
Tj initial = 25 °C

t=20ms
250 1000 ITSM
One cycle

200
Non repetitive
Tj initial = 25 ºC
150 I2 t
100
100

50

Number of cycles tp(ms)

0 10
1 10 100 1000 1 10

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Ratings and Characteristics (Ta 25 ºC unless otherwise noted)

Fig. 7: Relative variation of gate trigger Fig. 8: Relative variation of critical rate of
current, holding current and latching versus decrease of main current versus junction
junction temperature (typical values) temperature

IGT,IH,IL[Tj]/IGT,IH,IL.[Tj=25°C] (dI/dt)c [Tj]/(dI/dc)c [Tj specified]

2.5 6

5
2.0
IGT

4
1.5
3
IH&IL
1.0
2

0.5 1

Tj(°C) 0 Tj(°C)
0
-40 -20 0 20 40 60 80 100120140 0 25 50 75 100 125

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Revision History
Date Revision Description of Changes

Nov-2012 0 Original Data Sheet

3-Apr-2017 1 200V eliminated

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