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    Mems 3

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    Upendra Kashniyal
    This document provides an introduction to sensing and actuation methods in microelectromechanical systems (MEMS), focusing on electrostatic techniques. It describes the operating principles of electrostatic sensing using capacitance changes and electrostatic actuation using electric fields. Parallel plate and interdigitated finger capacitor geometries are discussed. Example applications mentioned include accelerometers, pressure sensors, flow sensors, tactile sensors, motors, and optical switches. Fabrication processes for different device types like comb drives, parallel plates, and scratch drive actuators are also summarized.

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    © All Rights Reserved
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    Mems 3

    Uploaded by

    Upendra Kashniyal
    122 views51 pages
    This document provides an introduction to sensing and actuation methods in microelectromechanical systems (MEMS), focusing on electrostatic techniques. It describes the operating principles of electrostatic sensing using capacitance changes and electrostatic actuation using electric fields. Parallel plate and interdigitated finger capacitor geometries are discussed. Example applications mentioned include accelerometers, pressure sensors, flow sensors, tactile sensors, motors, and optical switches. Fabrication processes for different device types like comb drives, parallel plates, and scratch drive actuators are also summarized.

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    MEMS 3

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    This document provides an introduction to sensing and actuation methods in microelectromechanical systems (MEMS), focusing on electrostatic techniques. It describes the operating principles of electrostatic sensing using capacitance changes and electrostatic actuation using electric fields. Parallel plate and interdigitated finger capacitor geometries are discussed. Example applications mentioned include accelerometers, pressure sensors, flow sensors, tactile sensors, motors, and optical switches. Fabrication processes for different device types like comb drives, parallel plates, and scratch drive actuators are also summarized.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    122 views51 pages

    Mems 3

    Uploaded by

    Upendra Kashniyal
    This document provides an introduction to sensing and actuation methods in microelectromechanical systems (MEMS), focusing on electrostatic techniques. It describes the operating principles of electrostatic sensing using capacitance changes and electrostatic actuation using electric fields. Parallel plate and interdigitated finger capacitor geometries are discussed. Example applications mentioned include accelerometers, pressure sensors, flow sensors, tactile sensors, motors, and optical switches. Fabrication processes for different device types like comb drives, parallel plates, and scratch drive actuators are also summarized.

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    © All Rights Reserved
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    of 51

    Introduction to Sensing And

    Actuation Methods

    Sensing & Actuation Methods


    Sensing

    Actuation

    Electrostatic
    Thermal
    Magnetic
    Piezoelectric
    Piezoresistive

    Electrostatic
    Thermal
    Magnetic
    Piezoelectric
    Shape Memory Alloys

    Tunneling ,Optical, FET, RF Resonance Sensing

    Design considerations
    Sensor

    Sensitivity
    Linearity
    Responsivity
    SNR
    Dynamic Range
    Bandwidth
    Drift
    Reliability
    Cross talk
    Cost

    Actuator
    Torque or force output
    capacity
    Range of motion
    Dynamic response
    Ease of fabrication
    Power consumption &
    energy efficiency
    Linearity of displacement
    as a function of driving
    bias
    Cross sensitivity &
    environmental stability
    Foot Print

    Electrostatic Sensing and


    Actuation

    Principle of operation
    A capacitor is broadly defined as two conductors that can
    hold opposite charges
    If the distance/relative position or dielectric medium
    between two conductors change as a result of applied
    stimulus,the capacitance value will change.This forms
    the basis of capacitive (Electrostatic) sensing.
    If a voltage or electric field is applied across two
    conductors,an electrostatic force would develop between
    these two objects resulting in actuation. This is defined
    as electrostatic actuation.

    Principle of operation
    Two Types of capacitive electrode geometries
    * Parallel Plate Capacitors
    * Interdigitated Finger (Comb Drive) Capacitors

    Two Parallel plates can move with respect to each


    other
    * Normal Displacement
    * Parallel sliding displacement

    Electromechanical model of a // plate


    capacitor
    Equilibrium position of Electrostatic Actuator under Bias

    Electrostatic Actuation

    Electrostatic energy stored by a capacitor

    Maximum Energy stored is


    Where Eb is the breakdown electric field

    When a voltage V is applied, a force Felectric develops


    between the plates.The magnitude of force equals the
    gradient of the stored energy W

    The spatial gradient of Electric Force is


    defined as electrical spring constant, K e

    Ke changes with position (d) and the biasing voltage (V)


    Effective spring constant of the structure: Km-Ke

    Calculation of equilibrium displacement : x

    Mechanical restoring force is


    At equilibrium,

    Equilibrium distance x can be calculated by solving this quadratic equation


    with respect to x.

    Electrical and Mechanical Force as a


    Function of Spacing
    Graphical solution

    Amplitude of
    electrostatic &
    mechanical force

    Balance of Electrical and Mechanical Force


    Effect of different bias voltages on equilibrium
    distance, x

    Balance of Forces at the Pull-in voltage

    At tangent,Magnitude
    of Fe equals Fm
    Pull-in Voltage
    The // plate
    electrostatic actuator
    becomes unstable for V
    greater than Vp

    Analytical Solution
    At Pull in Voltage, magnitudes of electrical and mechanical
    balance forces are same.By equating these two forces

    We know
    Putting V2 from above

    Only solution for x when


    Ke=Km is satisfied:

    Independent of Vp &
    Spring constant

    Putting x = xo/3 in
    at V = V pull in or Vp
    We get

    And consequently we get


    For V>Vpull in, Snap in condition,
    There is no equilibrium position and the two plates
    snap in or come in contact
    Idealized case: Two sources of deviation
    - Fringe caps. & Restoring force considered linear

    Two Types
    -Transverse
    - Longitudinal

    Many Parallel
    plates can increase
    Actuation force.

    Perspective view of comb-drive sensors


    and actuators

    Transverse Comb drive

    Capacitance at Rest
    Csl=Csr=0 l0 t/x0
    Capacitance after movement x Csl= 0 l0 t/x0-x
    Csr= 0 l0 t/x0+x
    Total value of capacitance= Csl+Csr+Cf

    The displacement
    sensitivity Sx=Ct ot/
    x
    Magnitude of
    force(Actuator)

    Longitudianal Comb Drive

    With lateral movement y,the capacitance of


    single finger
    Csl=Csr=0 (l0 - y) t/x0
    The displacement sensitivity: Sy= Ct ot/ y
    Force (Actuator) Fy= E/ y= /y

    Applications
    Electrostatic Motor
    Inertia Sensor
    - Parallel plate- capacitive accelerometer
    - Torsional plate- capacitive accelerometer

    Pressure Sensor
    - Membrane parallel plate pressure sensor
    - Membrane capacitive condenser microphone

    Flow sensor
    Tactile sensor

    MEMS Electrostatic Actuators

    MEMS Electrostatic Actuators

    An out of plane accelerometer based on comb drive actuation

    Typical Calculations

    The force constant associated with the mass is twice that of each
    individual fixed-guided cantilever. The overall force constant is
    K= 24EI/L3

    The total capacitance at rest is contributed by eight fixed electrodes and


    therefore 16 vertical wall capacitors .The value of total capacitance is
    C(t)= 16 (o loto/d)

    The displacement in Z axis which is a function of the applied acceleration


    causes the effective thickness (t) to change. Upon displacement z,the
    capacitance becomes
    C(t)= 16 {o lo(to-z)/d} and
    z= ma/K= maL3/24EI
    The relative change of capacitance with respect to acceleration a is
    C/ a= 2 o lomL3/3dEI

    Fabrication Process of Torsional Acceleration Sensor

    Change in capacitance
    under angular displacement

    n r l f
    d

    (2lm l f )

    Where,
    lm :length of inertia mass
    lf: length of sensing finger
    d: gap distance
    n: number of sense fingers

    Example: Force Balanced ADXL-50

    ADXL50

    Accelerometer with Capacitive Sensing

    Bulk micromachined capacitive accelerometer. Inertial


    mass in the middle wafer forms the moveable electrode
    of a variable differential capacitive Circuit.

    Accelerometer with Capacitive Sensing


    Fabrication Process
    Steps:

    Parallel-Plate Capacitive Accelerometer

    Surface Micromachined Parallel Plate Capacitor


    as an Accelerometer

    RT Process

    Ni Plate Size
    1x0.6mm2 in area
    5um Thick

    Fabrication Process of Pressure Sensor


    with Sealed Cavity
    Thin B-Doping

    Oxidation +
    Patterning

    Dielectric +
    Patterning

    Anisotropic
    Etch ( 9um)

    Poly + Doping

    Oxide Etch
    Oxidation
    Patterning

    CMP + Cr/Au
    deposition+
    Oxide
    Dep+Pattern
    Flip chip
    Bonding

    B Diffusion
    15um
    Reoxidise
    +Pattern

    Silicon Etch

    Surface Micromachined Pressure Sensor

    Capacitance changes with deflecting membrane which


    can be measured using AC circuitry.

    Comb-Drive Actuator for Optical Sw itching

    Linearly graded comb teeth

    MEMS Electrostatic Actuators


    Electrostatic Optical Switch

    Bulk Micromachined Parallel-Plate Capacitor as


    Differential Mode Tactile Sensor

    Capacitance change
    under normal force

    r 0 L2
    C
    d
    2
    d
    Total Capacitance
    under shear force

    r 0 L2
    C
    d 0.5L

    Fabrication Process of Tactile Sensor

    Buried n type layer (3um)


    +
    6um thick n epi layer

    Scratch Drive Actuator

    Square Pulse

    SDA Supported by Elastic Beams

    Fabrication Process: SDA


    Oxidation+Poly Si+P
    Implant+Photolithography+
    Nitride deposition

    Sacrificial oxide+ Two


    step Lithography

    Poly Si ( Buckling beam)+


    P Implant +Photolith. + Dry
    Etch

    Stress Anneal with


    thin oxide+Sacrificial
    layer removal

    SDA Actuator and Linked Buckling Beam

    Maximum Deflection Vs Horizontal Displacement

    Generated Force By SDA and Applied Voltage

    3-D Self-Assembled Polysilicon Structure

    MEMS Electrostatic Actuators

    MEMS Electrostatic Actuators

    MEMS Electrostatic Actuators

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