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    Pinfet: Ec 8252-Electronic Devices

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    Jothibasu Marappan
    PINFET is a monolithically integrated device that combines a PIN photodiode and field-effect transistor (FET) on a single chip. It functions as an optical receiver by converting received light signals into electrical signals. The PINFET has a layer structure consisting of a thick n-doped absorption layer sandwiched between a p-layer and an n-doped channel layer for the FET. This vertical integration allows the photodiode and FET to achieve optimized performance while being combined on a single substrate. PINFETs have applications in fiber optic communication systems and sensors due to their high sensitivity and wide dynamic range.

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    Pinfet: Ec 8252-Electronic Devices

    Uploaded by

    Jothibasu Marappan
    63 views15 pages
    PINFET is a monolithically integrated device that combines a PIN photodiode and field-effect transistor (FET) on a single chip. It functions as an optical receiver by converting received light signals into electrical signals. The PINFET has a layer structure consisting of a thick n-doped absorption layer sandwiched between a p-layer and an n-doped channel layer for the FET. This vertical integration allows the photodiode and FET to achieve optimized performance while being combined on a single substrate. PINFETs have applications in fiber optic communication systems and sensors due to their high sensitivity and wide dynamic range.

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    PINFET is a monolithically integrated device that combines a PIN photodiode and field-effect transistor (FET) on a single chip. It functions as an optical receiver by converting received light signals into electrical signals. The PINFET has a layer structure consisting of a thick n-doped absorption layer sandwiched between a p-layer and an n-doped channel layer for the FET. This vertical integration allows the photodiode and FET to achieve optimized performance while being combined on a single substrate. PINFETs have applications in fiber optic communication systems and sensors due to their high sensitivity and wide dynamic range.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    63 views15 pages

    Pinfet: Ec 8252-Electronic Devices

    Uploaded by

    Jothibasu Marappan
    PINFET is a monolithically integrated device that combines a PIN photodiode and field-effect transistor (FET) on a single chip. It functions as an optical receiver by converting received light signals into electrical signals. The PINFET has a layer structure consisting of a thick n-doped absorption layer sandwiched between a p-layer and an n-doped channel layer for the FET. This vertical integration allows the photodiode and FET to achieve optimized performance while being combined on a single substrate. PINFETs have applications in fiber optic communication systems and sensors due to their high sensitivity and wide dynamic range.

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    © All Rights Reserved
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    Download as pptx, pdf, or txt
    of 15

    EC 8252- ELECTRONIC DEVICES

    PINFET

    Jothibasu M
    AP(Sr.Gr)/ECE
    PSGiTech
    PINFET
    PINFET
    PINFET--- p-intrinsic-n Field-Effect Transistor

     It is an optical receiver form by combining a postive-intrinsic-Negative (PIN)


    phtotodiode and FET in a single housing

     The term “PINFET” (p-intrinsic-n, field-effect transistor) indicates the integration


    of a PIN photodiode and a discrete, high-performance transimpedance amplifier
    stage.
    PINFET
     Photodiode in the PINFET has a large Intrinsic semiconductor region -
    not doped or lightly doped

     It consists of a layer of intrinsic silicon sandwiched between heavily


    doped P and N type Silicon materials

     The intrinsic silicon reduces the transit time of photo induced electron
    hole pairs (distance travelled is less when compared to PN photodiode)

     Change in electrical conductivity - in accordance with the intensity of
    incident light when photon is absorbed.
    DEFINITION
     A monolithically integrated planar structure for an InP/InGaAs
    optoelectronic circuit consisting of a pin photodiode and a
    heterojunction field-effect transistor.

     (i.e.) PIN-FET integrated receiver formed by the combination of a PIN


    photodiode and a Field Effect Transistor (FET) and packaged in single
    housing.
    INTRODUCTION
     The integration of multiple optical and electronic functions on a single

    chip to achieve Opto-Electronic Integrated Circuits (OEIC), offers one

    approach to low cost and high performance.

     using e.g. field-effect transistors (FET) has the potential of low

    equivalent input noise current and improved receiver sensitivity.


    Device design
     The monolithic integration of photodiode and FETs reveals the
    difficulties of OEIC device technology.

     Optimized pin photodiodes requires a thick absorption layer with low


    background doping concentration.

     In contrast FETs of high performance need a high doping


    concentration in a thin channel layer.

     To integrate both components with respect to their optimized device


    performances, different technologies have been developed on the basis
    of "horizontal" and "vertical" integrated structures .

     Here we use a vertical integrated layer structure on a flat surface


    substrate.
    The layer structure consists of

     (i) a thick n-doped InP buffer layer, which reduces the series resistance and transit time
    effects of the pin,

     (ii) a thick n-doped InGaAs absorption layer,

     (iii) a thin n-doped InGaAs channel layer and

     (iV) a thin n-doped InP window layer, which also enables good passivation by the SiN x
    coating(to improve internal quantum efficiency).

     Beneath the region of the FET a buried p-layer has been incorporated. T

     The space charge region of this p-n junction reaches through the undoped InGaAs
    absorption layer which acts as a buffer layer, and confines the lateral drain current to the
    thin n-doped channel layer.
    Structure of PINFET
    Optimized performance of PINFET
    To realize optimized performances for pin and FET the following conditions have
    to be fulfilled:

     (i) For a high transconductance of the FET the doping level of the channel

    layer should be high.

     (ii) In order to achieve high quantum efficiency in the pin, the absorption layer

    thickness should be large.


    ADVANTAGES
    High sensitivity

    Wide dynamic range


    Application -

    A basic optical communications link


     Light sources - Laser diode and LED

     Fiber acts as communication channel

     PIN photodiode at receiver end - converts modulated light in to

    electrical signal

     Photodiode current is directly proportional to the incident optical

    power

     PINFET pre-amplifiers provides low-noise pre-amplification


    OTHER APPLICATIONS
    1)Fiber optic gyro system
    2) Fiber communication system
    3)Fiber sensor system
    4)Telecommunications line-terminating equipment or repeaters
    5)Optical sensor systems
    6) Fiber Optic Current Transformer (FOCT)
    7) Fiber Optic Sensing
    Thank you

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