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IE Chapter 1

Notes of industrial electronics

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Kavan Sketcher
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17 views

IE Chapter 1

Notes of industrial electronics

Uploaded by

Kavan Sketcher
Copyright
© © All Rights Reserved
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
You are on page 1/ 33

Industrial Electronics

Chapter 1: Power Electronic


Devices

Prepared by: Dhirendra Rana


Contents
 Power Diodes
 Dynamic Characteristics of BJT & PMOSFET
 Static & Dynamic Characteristics of SCRs
 Turn-on Methods of SCR
 Two Transistor topology of SCR
 Triggering circuits of SCRs (AC Timer)
 Triggering circuits of SCR using UJT
 Comparisons of various power electronic devices
Power Diodes
Reverse Recovery Characteristics
Static Characteristics of SCR
Dynamic Characteristics of SCR
Turn-on Methods of SCR
With anode positive with respect to cathode, a
thyristor can be turned on by anyone of the
following techniques:
• forward voltage triggering
• gate triggering
• dv/dt triggering
• temperature triggering
• light triggering
Forward Voltage Triggering
• When forward voltage is applied between anode and cathode
with gate circuit open, junction J2 is reverse biased.
• Depletion layer is formed across junction J2. The width of this
layer decreases with an increase in anode-cathode voltage.
• If forward voltage across anode- cathode
is gradually increased, a stage comes
when the depletion layer across J2
vanishes.
• At this moment, reverse biased junction
J2 is said to have avalanche breakdown
and the voltage at which it occurs is
called forward break over voltage VBO
• Transition from off-state to on-state obtained by exceeding VBO
is never employed as it may destroy the device.
Gate triggering
dv/dt triggering
• With forward voltage across anode and cathode of a
thyristor, the two outer junction J1 & J3 are forward biased,
but inner junction J2 is reverse biased.
• This reverse biased junction J2 has the characteristics of a
capacitor due to charges existing across the junction.
• Space-charges exist in the depletion region near junction J2
and therefore junction J1 behaves like a capacitance.
• If for-vard voltage is suddenly applied, a charging current
through junction capacitance Cj may turn on the SCR.
Temperature triggering
• Known as Thermal Triggering
• During forward blocking, most of the applied voltage appears
across reverse biased junction J2.
• This voltage across, J2 associated with leakage current,
would raise the temperature of this junction.
• With increase in temperature, width of depletion layer
decreases.
• This further leads to more leakage current and therefore,
more junction temperature.
• With the cumulative process, at some high temperature
(within the safe limits), depletion layer of reverse biased
junction vanishes and the device gets turned on.
Light Triggering
• A recess (or niche) is made in the inner p layer.
• When this recess is irradiated, free charge carriers (pairs of holes and electrons)
are generated just like when gate signal is applied between gate and cathode.
• The pulse of light of appropriate wavelength is guided by optical fibres for
irradiation .
• If the intensity of this light thrown on the recess exceeds a certain value, forward-
biased SCR is turned on.
• Light· triggered thyristors have now been used in
high-voltage direct current (HVDC) transmission
systems.
• In these several SCRs are connected in series-
parallel combination and their light-triggering has
the advantage of electrical isolation between
power and control circuits.
Two Transistor topology of SCR
• The principle of thyristor operation can be explained with the use of its two-
transistor model (or two-transistor analogy).
• Two-transistor model is obtained by bisecting the two middle layers, along
the dotted line, in two separate halves.
• Junctions J1 - J2 and J2 - J3 can be considered to constitute pnp and npn
transistors separately
`
Power Transistor
• Power transistors possess controlled characteristics.
• Turned on when a current signal is given to base, or control terminal.
• Remains in the on-state so long as control signal is present .
• When this control signal is removed, a power transistor is turned off.
• Power transistors are of four types:
– Bipolar junction transistors (BJTs)
– Metal-oxide-semiconductor
filed-effect transistors (MOSFETs)
– Insulated gate bipolar
transistors (IGBTs) and
– Static induction transistors (SITs).
Power BJT
• Three layer ,Two Junction npn or pnp type
• Bipolar means current flow in the device is due to the
movement of both holes and Electrons.
I-V Characteristics of Power BJT
Switching characteristics of BJT
Triggering circuits of SCRs (AC Timer)
• Gate triggering is the most common method of turning on
the SCRs, because this method lends itself accurately for
turning on the SCR at the desired instant of time. In
addition, gate triggering is an efficient and reliable method.
Resistance Firing Circuit
RC firing circuits
RC Half Wave
Triggering
RC Full Wave
Triggering
UJT
UJT Characteristics
UJT Oscillator triggering
Synchronized UJT triggering (or
Ramp triggering)

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