Sensor

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This document discusses the design of a temperature sensor using a two-dimensional photonic crystal. It describes the basic principles of photonic crystals and their ability to inhibit light propagation in bandgap regions. The sensor is designed by introducing a point defect in a silicon-based 2D photonic crystal structure. Simulation results show the output resonant wavelength shifts with increasing temperature levels, allowing for temperature sensing. Parameters like sensitivity, resolution and operating range are evaluated. Finite-difference time-domain (FDTD) simulation is used to analyze the sensor's performance.

TEMPERATURE SENSOR WITH TWO
DIMENSIONAL (2D) PHOTONIC
CRYSTAL
103/26/19

Photonic Crystals:Introduction
 Photonic crystals are periodic dielectric nanostructures that
affect the propagation of electromagnetic waves(EM) .
 Photonic crystals contain regularly repeating regions of high and
low dielectric.
 Wavelengths that are allowed to travel are known as modes;
groups of allowed modes form bands. Disallowed bands
of wavelengths are called photonic band gaps. This gives rise to
optical phenomena such as inhibition of spontaneous emission.
203/26/19

$Types of Photonic Crystals and Defects Types of Photonic Crystals  One Dimensional- Refractive index variation in single direction  Two Dimensional- Refractive index variation in two directions Three Dimensional- Refractive index variation in three different directions Types of Defects Point Defect- Removing a single rod Line Defect- Removing entire row of rods 03/26/19 Final Review 3 2D1D 3D$

Objective
 To design sensors using two dimensional Photonic Crystal .
 To analyze the performance parameters of the sensors
*To increase the Ultra compact device (Centimeter scale to Micrometer).
*To design sensing device with Temperature .
*To improve the Sensing sensitivity in dynamic temperature range
03/26/19 Final Review 4

PROCESS FLOW
Si (P type)
Si (P type)
Substrate
Oxidation /SPIN Coating/PR/SOFTBAKE
Sio2
Si (P type)
Sio2
Si
Photo resist/AZ S1813
S18==
Si (P type)
Si
Wet Etching
PR removal
Si (P type)
Si
Sio2
Masking
Si (P type)
Si
Sio2
Electron beam lithography
sio2Si -Substrate
sio2
Si -Substrate
sio2
Si -Substrate
sio2
Final Device
Deposition/Electron beam Deposition
Dry
Etching/DRIE

Device Structure 2 (21 X x23 Z)
Si -Substrate Silicon ( p-type )
sio2
5000 nm
400 nm
2500nm
110 nm (Non defect Si rods)
540 nm
65 nm
FILTER
ROD 1
Si rods

BAND GAP STRUTURES BEFORE DEFECTS 21*23
03/26/19 Final Review 7

TEMEPERATURE O0
to 500
DEGREE CELSIUS
03/26/19 Final Review 10

Summarized Parameters
03/26/19 Final Review 11

Simulation tool- FDTD
OPTI FDTD Group is the worldwide leader in Photonic design automation
software, serves several industries including Optical
Communication,optoelectronics, and Semiconductor manufacturing.
Within optical communications,

Conclusion
• The two dimensional photonic crystal based
temperature sensor is designed and its sensing
characteristics are analyzed
• The output resonant wavelength of the sensor is
shifted for every increasing temperature level. The
proposed sensor could be incorporated for real-time
applications for temperature sensing.
03/26/19 Final Review 13

Reference
[1] Benedetto Troia, Antonia Paolicelli, Francesco De Leonardis and Vittorio M. N. Passaro “
Book of Photonic Crystals for Optical Sensing: A Review”.
[2] JohnD.Joannopoulos Steven. Johnson, Robert D.Meade.(2014) “Book of Photonic crystals
modeling the flow of light” Optik 125, pp.6562–6565.
[3] Krishnan Vijaya Santhi and Savarimuthu Robinson(2014)” Two-Dimensional Photonic Crystal
Based Sensor for Pressure Sensing “ Journal of photonic sensors , Vol. 4, No. 3, pp. 248–253 .
[4] E. Chow, A. Grot, L. W. Mirkarimi, M. Sigalas, and G. Girolami(2004) ” Ultra compact
biochemical sensor built with two dimensional photonic crystal microcavity” Optics Letters,
Vol. 29, Issue 10, pp.1093-1095.
[5] HarshadaPati, Ashwini., Dr.Indumathi, Dr. PreetaShara(2013)” Design and analysis of
photonic crystal based fluidic sensor”, IET Conference publications(ARTCom 2013) , pp.
183-188.
[6] V. P. Chubakov, P. A. Chubakov, and A. I. Plekhanov(2012)” Humidity Sensor Based on
Photonic Crystal Opal Film” ISSN 1995_0780, Nanotechnologies in Russia, 2012, Vol. 7,
Nos. 9–10,pp. 499–501
03/26/19 Final Review 14

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1) MOSFETs have faster switching times and are more stable over a wide range of temperatures compared to BJTs. 2) Power MOSFETs can contain thousands of parallel hexagonal cells on a single chip to handle high currents without emitter ballast resistors. 3) The on-resistance of the MOSFET channel (RDS(on)) determines its power capability. Heat sinks are often required to dissipate heat from high power MOSFETs and prevent damage.

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The document discusses the Thumb instruction set of the ARM7TDMI processor, which uses 16-bit instructions as a more compact alternative to the standard 32-bit ARM instruction set. It describes how Thumb instructions are dynamically decompressed into ARM instructions, and how the processor can switch between ARM and Thumb modes using BX instructions. It also summarizes the key features of the Thumb instruction set, including differences from ARM like restricted register access, smaller immediate values and instruction formats optimized for code size over performance.

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Mobile IP is an open standard that allows devices to change networks while maintaining the same IP address. This allows ongoing connections and applications to continue without being dropped when the device roams to a new network. Mobile IP works by assigning the device two IP addresses - a home address that stays the same and a care-of address that changes based on the new network point of attachment. Tunneling is used to forward packets to the device's current location. Mobile IPv6 improves upon Mobile IPv4 by simplifying the mobility management process and integrating support for route optimization.

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Mobile IP is an open standard that allows devices to change networks while maintaining the same IP address. This ensures ongoing connections and applications are not dropped when switching networks. It works by assigning two IP addresses - a static home address and a care-of address that changes based on the device's current network location. When the device roams away from its home network, its traffic is encapsulated and tunneled through its home network to maintain connectivity using its home address. Mobile IP provides mobility across IP networks while cellular IP focuses on optimizing mobility within cellular networks.

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Sensor

1. TEMPERATURE SENSOR WITH TWO DIMENSIONAL (2D) PHOTONIC CRYSTAL 103/26/19

2. Photonic Crystals:Introduction  Photonic crystals are periodic dielectric nanostructures that affect the propagation of electromagnetic waves(EM) .  Photonic crystals contain regularly repeating regions of high and low dielectric.  Wavelengths that are allowed to travel are known as modes; groups of allowed modes form bands. Disallowed bands of wavelengths are called photonic band gaps. This gives rise to optical phenomena such as inhibition of spontaneous emission. 203/26/19

3. Types of Photonic Crystals and Defects Types of Photonic Crystals  One Dimensional- Refractive index variation in single direction  Two Dimensional- Refractive index variation in two directions Three Dimensional- Refractive index variation in three different directions Types of Defects Point Defect- Removing a single rod Line Defect- Removing entire row of rods 03/26/19 Final Review 3 2D1D 3D

4. Objective  To design sensors using two dimensional Photonic Crystal .  To analyze the performance parameters of the sensors *To increase the Ultra compact device (Centimeter scale to Micrometer). *To design sensing device with Temperature . *To improve the Sensing sensitivity in dynamic temperature range 03/26/19 Final Review 4

5. PROCESS FLOW Si (P type) Si (P type) Substrate Oxidation /SPIN Coating/PR/SOFTBAKE Sio2 Si (P type) Sio2 Si Photo resist/AZ S1813 S18== Si (P type) Si Wet Etching PR removal Si (P type) Si Sio2 Masking Si (P type) Si Sio2 Electron beam lithography sio2Si -Substrate sio2 Si -Substrate sio2 Si -Substrate sio2 Final Device Deposition/Electron beam Deposition Dry Etching/DRIE

6. Device Structure 2 (21 X x23 Z) Si -Substrate Silicon ( p-type ) sio2 5000 nm 400 nm 2500nm 110 nm (Non defect Si rods) 540 nm 65 nm FILTER ROD 1 Si rods

7. BAND GAP STRUTURES BEFORE DEFECTS 21*23 03/26/19 Final Review 7

8. PROPOSED MODEL 03/26/19 Final Review 8

9. Working 03/26/19 Final Review 9

10. TEMEPERATURE O0 to 500 DEGREE CELSIUS 03/26/19 Final Review 10

11. Summarized Parameters 03/26/19 Final Review 11

12. Simulation tool- FDTD OPTI FDTD Group is the worldwide leader in Photonic design automation software, serves several industries including Optical Communication,optoelectronics, and Semiconductor manufacturing. Within optical communications,

13. Conclusion • The two dimensional photonic crystal based temperature sensor is designed and its sensing characteristics are analyzed • The output resonant wavelength of the sensor is shifted for every increasing temperature level. The proposed sensor could be incorporated for real-time applications for temperature sensing. 03/26/19 Final Review 13

14. Reference [1] Benedetto Troia, Antonia Paolicelli, Francesco De Leonardis and Vittorio M. N. Passaro “ Book of Photonic Crystals for Optical Sensing: A Review”. [2] JohnD.Joannopoulos Steven. Johnson, Robert D.Meade.(2014) “Book of Photonic crystals modeling the flow of light” Optik 125, pp.6562–6565. [3] Krishnan Vijaya Santhi and Savarimuthu Robinson(2014)” Two-Dimensional Photonic Crystal Based Sensor for Pressure Sensing “ Journal of photonic sensors , Vol. 4, No. 3, pp. 248–253 . [4] E. Chow, A. Grot, L. W. Mirkarimi, M. Sigalas, and G. Girolami(2004) ” Ultra compact biochemical sensor built with two dimensional photonic crystal microcavity” Optics Letters, Vol. 29, Issue 10, pp.1093-1095. [5] HarshadaPati, Ashwini., Dr.Indumathi, Dr. PreetaShara(2013)” Design and analysis of photonic crystal based fluidic sensor”, IET Conference publications(ARTCom 2013) , pp. 183-188. [6] V. P. Chubakov, P. A. Chubakov, and A. I. Plekhanov(2012)” Humidity Sensor Based on Photonic Crystal Opal Film” ISSN 1995_0780, Nanotechnologies in Russia, 2012, Vol. 7, Nos. 9–10,pp. 499–501 03/26/19 Final Review 14

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