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ORCIDAndre Juge
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2020 – today
- 2023
[c5]Denis Rideau, Wilfried Uhring, R. A. Bianchi, Rémi Helleboid, Gabriel Mugny, Jérémy Grebot, Jean-Robert Manouvrier, R. Neri, F. Brun, Mohammadreza Dolatpoor Lakeh, Sven Rink, Jean-Baptiste Kammerer, Christophe Lallement, E. Lacombe, Dominique Golanski, Bruce Rae, T. M. Bah, F. Twaddle, V. Quenette, G. Marchand, Christel Buj, R. Fillon, Y. Henrion, Isobel Nicholson, Megan Agnew, M. Basset, R. Perrier, M. Al-Rawhani, Bastien Mamdy, S. Pellegrin, Gilles Gouget, P. Maciazek, Andre Juge, A. Dartigues, Hélène Wehbe-Alause:
Direct Measurements and Modeling of Avalanche Dynamics and Quenching in SPADs. ESSDERC 2023: 144-147- 2022
- [c4]Sven Rink, V. Quenette, Jean-Robert Manouvrier, Andre Juge, Gilles Gouget, Denis Rideau, R. A. Bianchi, Dominique Golanski, Bastien Mamdy, Jean-Baptiste Kammerer, Wilfried Uhring, Christophe Lallement, Sara Pellegrini, Megan Agnew, Bruce Rae:
A self-sustaining Single Photon Avalanche Diode Model. ESSDERC 2022: 281-284
2010 – 2019
- 2018
- [c3]Krishna Pradeep, Theano A. Karatsori, Thierry Poiroux, Andre Juge, Patrick Scheer, Gilles Gouget, Emmanuel Josse, Gérard Ghibaudo
:
Analysis of Gate Current Wafer Level Variability in Advanced FD-SOI MOSFETs. ESSDERC 2018: 242-245 - [c2]Salim El Ghouli, Wladyslaw Grabinski, Jean-Michel Sallese, Andre Juge, Christophe Lallement:
Analog RF and mm-Wave design Tradeoff in UTBB FDSOI: Application to a 35 GHz LNA. MIXDES 2018: 57-62 - 2016
- [c1]Salim El Ghouli, Patrick Scheer, Michel Minondo, Andre Juge, Thierry Poiroux, Jean-Michel Sallese, Christophe Lallement:
Analog and RF modeling of FDSOI UTBB MOSFET using Leti-UTSOI model. MIXDES 2016: 41-46 - 2014
- [j3]Omar Jonani Franco Piliado, Giancarlo Castaneda, Andre Juge, Gérard Ghibaudo:
Characterization Methodology for MOSFET Local Systematic Variability in Presence of Statistical Variability. J. Low Power Electron. 10(1): 127-136 (2014) - 2012
- [j2]Smriti Joshi, Anne Lombardot, Philippe Flatresse, Carmelo D'Agostino, Andre Juge, Edith Beigné, Stéphane Girard:
Statistical Estimation of Dominant Physical Parameters for Leakage Variability in 32 Nanometer CMOS, Under Supply Voltage Variations. J. Low Power Electron. 8(1): 113-124 (2012)
2000 – 2009
- 2005
- [j1]Fabien Gilibert, Denis Rideau, Alexandre Dray, Francois Agut, Michel Minondo, Andre Juge, Pascal Masson, Rachid Bouchakour:
Characterization and Modeling of Gate-Induced-Drain-Leakage. IEICE Trans. Electron. 88-C(5): 829-837 (2005)
Coauthor Index
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