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ORCIDDenis Rideau
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2020 – today
- 2023
[c12]Denis Rideau, Wilfried Uhring, R. A. Bianchi, Rémi Helleboid, Gabriel Mugny, Jérémy Grebot, Jean-Robert Manouvrier, R. Neri, F. Brun, Mohammadreza Dolatpoor Lakeh, Sven Rink, Jean-Baptiste Kammerer, Christophe Lallement, E. Lacombe, Dominique Golanski, Bruce Rae, T. M. Bah, F. Twaddle, V. Quenette, G. Marchand, Christel Buj, R. Fillon, Y. Henrion, Isobel Nicholson, Megan Agnew, M. Basset, R. Perrier, M. Al-Rawhani, Bastien Mamdy, S. Pellegrin, Gilles Gouget, P. Maciazek, Andre Juge, A. Dartigues, Hélène Wehbe-Alause:
Direct Measurements and Modeling of Avalanche Dynamics and Quenching in SPADs. ESSDERC 2023: 144-147- 2022
- [c11]Mathieu Sicre, Megan Agnew, Christel Buj, Caroline Coutier, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Françis Calmon:
Statistical measurements and Monte-Carlo simulations of DCR in SPADs. ESSCIRC 2022: 193-196 - [c10]Dorian Saint-Pierre, Raphaël Clerc, Rémi Helleboid, Denis Rideau:
On the convergence of the recurrence solution of McIntyre's local and non-local avalanche triggering probability equations for SPAD compact models. ESSDERC 2022: 277-280 - [c9]Sven Rink, V. Quenette, Jean-Robert Manouvrier, Andre Juge, Gilles Gouget, Denis Rideau, R. A. Bianchi, Dominique Golanski, Bastien Mamdy, Jean-Baptiste Kammerer, Wilfried Uhring, Christophe Lallement, Sara Pellegrini, Megan Agnew, Bruce Rae:
A self-sustaining Single Photon Avalanche Diode Model. ESSDERC 2022: 281-284 - 2021
- [c8]Mathieu Sicre, Megan Agnew, Christel Buj, Jean Coignus
, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Françis Calmon:
Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study. ESSCIRC 2021: 143-146 - [c7]Mathieu Sicre, Megan Agnew, Christel Buj, Jean Coignus, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Françis Calmon:
Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study. ESSDERC 2021: 143-146 - [c6]Jérémy Grebot, Gabriel Mugny, Rémi Helleboid, Isobel Nicholson, Francesco Abbate, Denis Rideau, Hélène Wehbe-Alause, Claire Scheid, Stéphane Lanteri:
Semi-Empirical model for optical properties of Si1-xGex alloys accounting for strain and temperature. ESSDERC 2021: 267-270 - [c5]Rémi Helleboid, Denis Rideau, Isobel Nicholson, Norbert Moussy, Olivier Saxod, Marie Basset, Jérémy Grebot, Antonin Zimmerman, Bastien Mamdy, Dominique Golanski, Megan Agnew, Sara Pellegrini, Mathieu Sicre:
Comprehensive modeling and characterization of Photon Detection Efficiency and Jitter in advanced SPAD devices. ESSDERC 2021: 271-274
2010 – 2019
- 2018
- [c4]Tulio Chaves de Albuquerque, Françis Calmon, Raphael Clerc, Patrick Pittet, Younes Benhammou, Dominique Golanski, Sebastien Jouan, Denis Rideau, Andreia Cathelin:
Integration of SPAD in 28nm FDSOI CMOS technology. ESSDERC 2018: 82-85 - 2016
- [c3]Gabriel Mugny, F. G. Pereira, Denis Rideau, François Triozon, Yann-Michel Niquet, Marco Pala, D. Garetto, Christophe Delerue:
A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD. ESSDERC 2016: 424-427 - 2014
- [c2]François Andrieu, Mikaël Cassé, E. Baylac, P. Perreau, O. Nier, Denis Rideau, R. Berthelon, Franck Pourchon, A. Pofelski, Barbara De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, Vincent Barral, Rossella Ranica, Nicolas Planes, Walter Schwarzenbach, E. Richard, Emmanuel Josse, Olivier Weber, Franck Arnaud, Maud Vinet, Olivier Faynot, Michel Haond:
Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs. ESSDERC 2014: 106-109 - [c1]Frederic Monsieur, Yvan Denis, Denis Rideau, Vincent Quenette, Gilles Gouget, Clément Tavernier, Hervé Jaouen, Gérard Ghibaudo, Joris Lacord:
The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies. ESSDERC 2014: 254-257 - 2012
- [j2]Yoann Mamy Randriamihaja, Vincent Huard, Xavier Federspiel, Alban Zaka, Pierpaolo Palestri, Denis Rideau, David Roy, Alain Bravaix:
Microscopic scale characterization and modeling of transistor degradation under HC stress. Microelectron. Reliab. 52(11): 2513-2520 (2012)
2000 – 2009
- 2005
- [j1]Fabien Gilibert, Denis Rideau, Alexandre Dray, Francois Agut, Michel Minondo, Andre Juge, Pascal Masson, Rachid Bouchakour:
Characterization and Modeling of Gate-Induced-Drain-Leakage. IEICE Trans. Electron. 88-C(5): 829-837 (2005)
Coauthor Index
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