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ORCIDJean-Luc Ogier
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2010 – 2019
- 2017
[j12]Giulio Torrente, Jean Coignus
, Alexandre Vernhet, Jean-Luc Ogier, David Roy, Gérard Ghibaudo:
Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology. Microelectron. Reliab. 79: 281-287 (2017)- 2014
- [j11]Vincenzo Della Marca, Jérémy Postel-Pellerin, Guillaume Just, Pierre Canet, Jean-Luc Ogier:
Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories. Microelectron. Reliab. 54(9-10): 2262-2265 (2014) - [c2]Benjamin Rebuffat, Pascal Masson, Jean-Luc Ogier, Marc Mantelli, Romain Laffont:
Effect of AC stress on oxide TDDB and trapped charge in interface states. ISIC 2014: 416-419 - 2013
- [j10]Pierre Canet, Jérémy Postel-Pellerin, Jean-Luc Ogier:
Access resistor modelling for EEPROM's retention test vehicle. Microelectron. Reliab. 53(9-11): 1218-1223 (2013) - [c1]Benjamin Rebuffat, Vincenzo Della Marca, Pascal Masson, Jean-Luc Ogier, Marc Mantelli, Olivier Paulet, Laurent Lopez, Romain Laffont:
Effect of ions presence in the SiOCH inter metal dielectric structure. ESSDERC 2013: 218-221 - 2012
- [j9]Guillaume Just, Vincenzo Della Marca, Arnaud Régnier, Jean-Luc Ogier, Jérémy Postel-Pellerin, Jean-Michel Portal, Pascal Masson:
Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability. J. Low Power Electron. 8(5): 717-724 (2012) - [j8]Philippe Chiquet, Pascal Masson, Romain Laffont, Gilles Micolau, Jérémy Postel-Pellerin, Frédéric Lalande, Bernard Bouteille, Jean-Luc Ogier:
Investigation of the effects of constant voltage stress on thin SiO2 layers using dynamic measurement protocols. Microelectron. Reliab. 52(9-10): 1895-1900 (2012) - 2011
- [j7]Y. Joly, Laurent Lopez, Jean-Michel Portal, Hassen Aziza, Jean-Luc Ogier, Y. Bert, Franck Julien, Pascal Fornara:
Matching degradation of threshold voltage and gate voltage of NMOSFET after Hot Carrier Injection stress. Microelectron. Reliab. 51(9-11): 1561-1563 (2011)
2000 – 2009
- 2009
- [j6]Christelle Bénard, Gaëtan Math, Pascal Fornara, Jean-Luc Ogier, Didier Goguenheim:
Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities. Microelectron. Reliab. 49(9-11): 1008-1012 (2009) - 2008
- [j5]D. Pic, Didier Goguenheim, Jean-Luc Ogier:
Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm SiO2 thin oxides stressed to hard breakdown. Microelectron. Reliab. 48(3): 335-341 (2008) - [j4]D. Pic, Arnaud Régnier, V. Pean, Jean-Luc Ogier, Didier Goguenheim:
Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications. Microelectron. Reliab. 48(8-9): 1318-1321 (2008) - 2007
- [j3]Didier Goguenheim, D. Pic, Jean-Luc Ogier:
Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions. Microelectron. Reliab. 47(9-11): 1322-1329 (2007) - [j2]D. Pic, Didier Goguenheim, Jean-Luc Ogier:
A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories. Microelectron. Reliab. 47(9-11): 1373-1377 (2007) - [j1]Claire Le Roux, Laurent Lopez, Abdellatif Firiti, Jean-Luc Ogier, Frédéric Lalande, Romain Laffont, Gilles Micolau:
A new method to quantify retention-failed cells of an EEPROM CAST. Microelectron. Reliab. 47(9-11): 1609-1613 (2007)
Coauthor Index
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