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2020 – today
- 2023
[j14]James Brown
, Kean Hong Tok, Rui Gao, Zhigang Ji, Weidong Zhang, John S. Marsland, Thomas Chiarella, Jacopo Franco, Ben Kaczer, Dimitri Linten, Jianfu Zhang:
A Pragmatic Model to Predict Future Device Aging. IEEE Access 11: 127725-127736 (2023)- [c56]Erik Bury, Michiel Vandemaele, Jacopo Franco, Adrian Chasin, Stanislav Tyaginov, A. Vandooren, Romain Ritzenthaler, Hans Mertens, Javier Diaz-Fortuny, N. Horiguchi, Dimitri Linten, Ben Kaczer:
Reliability challenges in Forksheet Devices: (Invited Paper). IRPS 2023: 1-8 - 2022
- [c55]Erik Bury, Adrian Vaisman Chasin, Ben Kaczer, Michiel Vandemaele, Stanislav Tyaginov, Jacopo Franco, Romain Ritzenthaler, Hans Mertens, Pieter Weckx, N. Horiguchi, Dimitri Linten:
Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets. IRPS 2022: 5 - [c54]Kateryna Serbulova, S.-H. Chen, Geert Hellings, Anabela Veloso, Anne Jourdain, Dimitri Linten, Jo De Boeck, Guido Groeseneken, Julien Ryckaert, Geert Van der Plas, Eric Beyne, Eugenio Dentoni Litta, Naoto Horiguchi:
Enabling Active Backside Technology for ESD and LU Reliability in DTCO/STCO. VLSI Technology and Circuits 2022: 431-432 - 2021
- [c53]Jacopo Franco, Hiroaki Arimura, J.-F. de Marneffe, A. Vandooren, L.-Å. Ragnarsson, Zhicheng Wu, Dieter Claes, E. Dentoni Litta, N. Horiguchi, Kris Croes, Dimitri Linten, Tibor Grasser, Ben Kaczer:
Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper. ICICDT 2021: 1-4 - [c52]Vamsi Putcha, Liang Cheng, AliReza Alian, Ming Zhao, Hai Lu, Bertrand Parvais, Niamh Waldron, Dimitri Linten, Nadine Collaert:
On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices. IRPS 2021: 1-8 - [c51]Gerhard Rzepa, Markus Karner, Oskar Baumgartner, Georg Strof, Franz Schanovsky, Ferdinand Mitterbauer, Christian Kernstock, Hui-Wen Karner, Pieter Weckx, Geert Hellings, Dieter Claes, Zhicheng Wu, Yang Xiang, Thomas Chiarella, Bertrand Parvais, Jérôme Mitard, Jacopo Franco, Ben Kaczer, Dimitri Linten, Zlatan Stanojevic:
Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies. IRPS 2021: 1-6 - [c50]Zhicheng Wu, Jacopo Franco, Brecht Truijen, Philippe Roussel, Stanislav Tyaginov, Michiel Vandemaele, Erik Bury, Guido Groeseneken, Dimitri Linten, Ben Kaczer:
Physics-based device aging modelling framework for accurate circuit reliability assessment. IRPS 2021: 1-6 - [c49]Yang Xiang, Stanislav Tyaginov, Michiel Vandemaele, Zhicheng Wu, Jacopo Franco, Erik Bury, Brecht Truijen, Bertrand Parvais, Dimitri Linten, Ben Kaczer:
A BSIM-Based Predictive Hot-Carrier Aging Compact Model. IRPS 2021: 1-9 - 2020
- [c48]Simon Van Beek, Barry J. O'Sullivan, Sebastien Couet, Davide Crotti, Dimitri Linten, Gouri Sankar Kar:
Understanding and empirical fitting the breakdown of MgO in end-of-line annealed MTJs. IRPS 2020: 1-5 - [c47]Adrian Vaisman Chasin, Jacopo Franco, Erik Bury, Romain Ritzenthaler, Eugenio Dentoni Litta, Alessio Spessot, Naoto Horiguchi, Dimitri Linten, Ben Kaczer:
Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation. IRPS 2020: 1-6 - [c46]Alexander Grill, Erik Bury, Jakob Michl, Stanislav Tyaginov, Dimitri Linten, Tibor Grasser, Bertrand Parvais, Ben Kaczer, Michael Waltl, Iuliana P. Radu:
Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures. IRPS 2020: 1-6 - [c45]Anastasiia Kruv, Ben Kaczer, Alexander Grill, Mario Gonzalez, Jacopo Franco, Dimitri Linten, Wolfgang Goes, Tibor Grasser, Ingrid De Wolf:
On the impact of mechanical stress on gate oxide trapping. IRPS 2020: 1-5 - [c44]Jakob Michl, Alexander Grill, Dieter Claes, Gerhard Rzepa, Ben Kaczer, Dimitri Linten, Iuliana P. Radu, Tibor Grasser, Michael Waltl:
Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures. IRPS 2020: 1-6 - [c43]Subrat Mishra, Pieter Weckx, Ji-Yung Lin, Ben Kaczer, Dimitri Linten, Alessio Spessot, Francky Catthoor:
Fast & Accurate Methodology for Aging Incorporation in Circuits using Adaptive Waveform Splitting (AWS). IRPS 2020: 1-5 - [c42]Vamsi Putcha, Erik Bury, Jacopo Franco, Amey Walke, Simeng Zhao, Uthayasankaran Peralagu, Ming Zhao, AliReza Alian, Ben Kaczer, Niamh Waldron, Dimitri Linten, Bertrand Parvais, Nadine Collaert:
Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications. IRPS 2020: 1-8 - [c41]Stanislav Tyaginov, Alexander Grill, Michiel Vandemaele, Tibor Grasser, Geert Hellings, Alexander Makarov, Markus Jech, Dimitri Linten, Ben Kaczer:
A Compact Physics Analytical Model for Hot-Carrier Degradation. IRPS 2020: 1-7
2010 – 2019
- 2019
- [j13]Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede:
A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS. IEEE J. Solid State Circuits 54(10): 2765-2776 (2019) - [c40]Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser:
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants. ESSDERC 2019: 262-265 - [c39]Erik Bury, Adrian Vaisman Chasin, Michiel Vandemaele, Simon Van Beek, Jacopo Franco, Ben Kaczer, Dimitri Linten:
Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the {VG, VD} bias space. IRPS 2019: 1-6 - [c38]Shih-Hung Chen, Dimitri Linten, Geert Hellings, Marko Simicic, Ben Kaczer, Thomas Chiarella, Hans Mertens, Jérôme Mitard, Anda Mocuta, N. Horiguchi:
CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies. IRPS 2019: 1-7 - [c37]Geert Hellings, Philippe Roussel, Nian Wang, Roman Boschke, Shih-Hung Chen, Marko Simicic, Mirko Scholz, Soeren Stoedel, Kris Myny, Dimitri Linten, Paul Hellings, Nowab Reza M. D. Ashif:
Concise Analytical Expression for Wunsch-Bell 1-D Pulsed Heating and Applications in ESD Using TLP. IRPS 2019: 1-6 - [c36]Yusuke Higashi, Karine Florent, A. Subirats, Ben Kaczer, Luca Di Piazza, Sergiu Clima, Nicolo Ronchi, Sean R. C. McMitchell, Kaustuv Banerjee, Umberto Celano, Masamichi Suzuki, Dimitri Linten, Jan Van Houdt:
New Insights into the Imprint Effect in FE-HfO2 and its Recovery. IRPS 2019: 1-7 - [c35]Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Alexander Grill, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov:
Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs. IRPS 2019: 1-7 - [c34]Barry J. O'Sullivan, Romain Ritzenthaler, Gerhard Rzepa, Z. Wu, E. Dentoni Litta, O. Richard, T. Conard, V. Machkaoutsan, Pierre Fazan, C. Kim, Jacopo Franco, Ben Kaczer, Tibor Grasser, Alessio Spessot, Dimitri Linten, N. Horiguchi:
Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices. IRPS 2019: 1-8 - [c33]Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Vaisman Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken:
Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. IRPS 2019: 1-7 - [c32]Zhicheng Wu, Jacopo Franco, Dieter Claes, Gerhard Rzepa, Philippe J. Roussel, Nadine Collaert, Guido Groeseneken, Dimitri Linten, Tibor Grasser, Ben Kaczer:
Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling. IRPS 2019: 1-7 - 2018
- [j12]Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Vamsi Putcha, Erik Bury, Marko Simicic, Adrian Vaisman Chasin, Dimitri Linten, Bertrand Parvais, Francky Catthoor, Gerhard Rzepa, Michael Waltl, Tibor Grasser:
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. Microelectron. Reliab. 81: 186-194 (2018) - [j11]Gerhard Rzepa, Jacopo Franco, Barry J. O'Sullivan, A. Subirats, Marko Simicic, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch, Michael Waltl, Philippe Roussel, Dimitri Linten, Ben Kaczer, Tibor Grasser:
Comphy - A compact-physics framework for unified modeling of BTI. Microelectron. Reliab. 85: 49-65 (2018) - [j10]Kai-Hsin Chuang, Robin Degraeve, Andrea Fantini, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede:
A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF. IACR Trans. Cryptogr. Hardw. Embed. Syst. 2018(1): 98-117 (2018) - [c31]Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede:
A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS. A-SSCC 2018: 157-160 - [c30]Simon Van Beek, Philippe Roussel, Barry J. O'Sullivan, Robin Degraeve, Stefan Cosemans, Dimitri Linten, Gouri Sankar Kar:
Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit. ESSDERC 2018: 146-149 - [c29]Erik Bury, Ben Kaczer, Simon Van Beek, Dimitri Linten:
Experimental extraction of BEOL composite equivalent thermal conductivities for application in self-heating simulations. ESSDERC 2018: 186-189 - [c28]Marko Simicic, Geert Hellings, Shih-Hung Chen, Naoto Horiguchi, Dimitri Linten:
ESD diodes with Si/SiGe superlattice I/O finFET architecture in a vertically stacked horizontal nanowire technology. ESSDERC 2018: 194-197 - [c27]Erik Bury, Adrian Vaisman Chasin, Ben Kaczer, Kai-Hsin Chuang, Jacopo Franco, Marko Simicic, Pieter Weckx, Dimitri Linten:
Self-heating-aware CMOS reliability characterization using degradation maps. IRPS 2018: 2 - [c26]Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, T. Kallstenius, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede:
A multi-bit/cell PUF using analog breakdown positions in CMOS. IRPS 2018: 2-1 - [c25]Philippe J. Roussel, Adrian Vaisman Chasin, Steven Demuynck, Naoto Horiguchi, Dimitri Linten, Anda Mocuta:
New methodology for modelling MOL TDDB coping with variability. IRPS 2018: 3 - [c24]Jacopo Franco, Ben Kaczer, Adrian Vaisman Chasin, Erik Bury, Dimitri Linten:
Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space. IRPS 2018: 5 - [c23]Barry J. O'Sullivan, Simon Van Beek, Philippe J. Roussel, Sidharth Rao, Wonsub Kim, S. Couet, Johan Swerts, Farrukh Yasin, Dimitri Crotti, Dimitri Linten, Gouri Sankar Kar:
Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown. IRPS 2018: 5-1 - [c22]Vamsi Putcha, Jacopo Franco, Abhitosh Vais, Ben Kaczer, S. Sioncke, Dimitri Linten, Guido Groeseneken:
Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps. IRPS 2018: 5 - 2017
- [c21]Mirko Scholz, Geert Hellings, Shih-Hung Chen, Dimitri Linten:
Tunable ESD clamp for high-voltage power I/O pins of a battery charge circuit in mobile applications. ESSDERC 2017: 248-251 - [c20]Nian Wang, Shih-Hung Chen, Geert Hellings, Kris Myny, Soeren Steudel, Mirko Scholz, Roman Boschke, Dimitri Linten, Guido Groeseneken:
ESD characterisation of a-IGZO TFTs on Si and foil substrates. ESSDERC 2017: 276-279 - 2016
- [j9]Mirko Scholz, Shih-Hung Chen, Geert Hellings, Dimitri Linten:
Impact of on- and off-chip protection on the transient-induced latch-up sensitivity of CMOS IC. Microelectron. Reliab. 57: 53-58 (2016) - 2015
- [c19]Dimitrios Velenis, Mikael Detalle, Geert Hellings, Mirko Scholz, Erik Jan Marinissen, Geert Van der Plas, Antonio La Manna, Andy Miller, Dimitri Linten, Eric Beyne:
Processing active devices on Si interposer and impact on cost. 3DIC 2015: TS11.2.1-TS11.2.4 - [c18]Pieter Weckx, Ben Kaczer, Praveen Raghavan, Jacopo Franco, Marko Simicic, Philippe J. Roussel, Dimitri Linten, Aaron Thean, Diederik Verkest, Francky Catthoor, Guido Groeseneken:
Characterization and simulation methodology for time-dependent variability in advanced technologies. CICC 2015: 1-8 - [c17]Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser:
The defect-centric perspective of device and circuit reliability - From individual defects to circuits. ESSDERC 2015: 218-225 - [c16]Roman Boschke, Guido Groeseneken, Mirko Scholz, Shih-Hung Chen, Geert Hellings, Peter Verheyen, Dimitri Linten:
ESD protection diodes in optical interposer technology. ICICDT 2015: 1-4 - [c15]Moonju Cho, Alessio Spessot, Ben Kaczer, Marc Aoulaiche, Romain Ritzenthaler, Tom Schram, Pierre Fazan, Naoto Horiguchi, Dimitri Linten:
Off-state stress degradation mechanism on advanced p-MOSFETs. ICICDT 2015: 1-4 - [c14]Mirko Scholz, Shih-Hung Chen, Geert Hellings, Dimitri Linten, Roman Boschke:
Impact of local interconnects on ESD design. ICICDT 2015: 1-4 - [c13]Zhigang Ji, Dimitri Linten, Roman Boschke, Geert Hellings, S. H. Chen, AliReza Alian, D. Zhou, Yves Mols, Tsvetan Ivanov, Jacopo Franco, Ben Kaczer, X. Zhang, R. Gao, Jianfu Zhang, Weidong Zhang, Nadine Collaert, Guido Groeseneken:
ESD characterization of planar InGaAs devices. IRPS 2015: 3 - [c12]Geert Hellings, Mirko Scholz, Mikael Detalle, Dimitrios Velenis, Muriel de Potter de ten Broeck, C. Roda Neve, Y. Li, Stefaan Van Huylenbroeck, Shih-Hung Chen, Erik Jan Marinissen, Antonio La Manna, Geert Van der Plas, Dimitri Linten, Eric Beyne, Aaron Thean:
Active-lite interposer for 2.5 & 3D integration. VLSIC 2015: 222- - 2013
- [c11]Geert Hellings, Shih-Hung Chen, Dimitri Linten, Mirko Scholz, Guido Groeseneken:
Quasi-3D method: Time-efficient TCAD and mixed-mode simulations on finFET technologies. CICC 2013: 1-4 - 2011
- [j8]Geert Van der Plas, Paresh Limaye, Igor Loi, Abdelkarim Mercha, Herman Oprins, Cristina Torregiani, Steven Thijs, Dimitri Linten, Michele Stucchi, Guruprasad Katti, Dimitrios Velenis, Vladimir Cherman, Bart Vandevelde, Veerle Simons, Ingrid De Wolf, Riet Labie, Dan Perry, Stephane Bronckers, Nikolaos Minas, Miro Cupac, Wouter Ruythooren, Jan Van Olmen, Alain Phommahaxay, Muriel de Potter de ten Broeck, Ann Opdebeeck, Michal Rakowski, Bart De Wachter, Morin Dehan, Marc Nelis, Rahul Agarwal, Antonio Pullini, Federico Angiolini, Luca Benini, Wim Dehaene, Youssef Travaly, Eric Beyne, Paul Marchal:
Design Issues and Considerations for Low-Cost 3-D TSV IC Technology. IEEE J. Solid State Circuits 46(1): 293-307 (2011) - 2010
- [c10]Geert Van der Plas, Steven Thijs, Dimitri Linten, Guruprasad Katti, Paresh Limaye, Abdelkarim Mercha, Michele Stucchi, Herman Oprins, Bart Vandevelde, Nikolaos Minas, Miro Cupac, Morin Dehan, Marc Nelis, Rahul Agarwal, Wim Dehaene, Youssef Travaly, Eric Beyne, Paul Marchal:
Verifying electrical/thermal/thermo-mechanical behavior of a 3D stack - Challenges and solutions. CICC 2010: 1-4 - [c9]Geert Van der Plas, Paresh Limaye, Abdelkarim Mercha, Herman Oprins, Cristina Torregiani, Steven Thijs, Dimitri Linten, Michele Stucchi, Guruprasad Katti, Dimitrios Velenis, Domae Shinichi, Vladimir Cherman, Bart Vandevelde, Veerle Simons, Ingrid De Wolf, Riet Labie, Dan Perry, Stephane Bronckers, Nikolaos Minas, Miro Cupac, Wouter Ruythooren, Jan Van Olmen, Alain Phommahaxay, Muriel de Potter de ten Broeck, Ann Opdebeeck, Michal Rakowski, Bart De Wachter, Morin Dehan, Marc Nelis, Rahul Agarwal, Wim Dehaene, Youssef Travaly, Pol Marchal, Eric Beyne:
Design issues and considerations for low-cost 3D TSV IC technology. ISSCC 2010: 148-149
2000 – 2009
- 2009
- [j7]Jonathan Borremans, Steven Thijs, Piet Wambacq, Yves Rolain, Dimitri Linten, Maarten Kuijk:
A Fully Integrated 7.3 kV HBM ESD-Protected Transformer-Based 4.5-6 GHz CMOS LNA. IEEE J. Solid State Circuits 44(2): 344-353 (2009) - [j6]Dimitri Linten, Steven Thijs, Jonathan Borremans, Morin Dehan, David Trémouilles, Mirko Scholz, M. I. Natarajan, Piet Wambacq, Stefaan Decoutere, Guido Groeseneken:
A plug-and-play wideband RF circuit ESD protection methodology: T-diodes. Microelectron. Reliab. 49(12): 1440-1446 (2009) - [j5]Mirko Scholz, Dimitri Linten, Steven Thijs, Sandeep Sangameswaran, Masanori Sawada, Toshiyuki Nakaei, Takumi Hasebe, Guido Groeseneken:
ESD On-Wafer Characterization: Is TLP Still the Right Measurement Tool? IEEE Trans. Instrum. Meas. 58(10): 3418-3426 (2009) - 2008
- [c8]Steven Thijs, Mototsugu Okushima, Jonathan Borremans, Philippe Jansen, Dimitri Linten, Mirko Scholz, Piet Wambacq, Guido Groeseneken:
Inductor-based ESD protection under CDM-like ESD stress conditions for RF applications. CICC 2008: 49-52 - [c7]Piet Wambacq, Abdelkarim Mercha, Karen Scheir, Bob Verbruggen, Jonathan Borremans, Vincent De Heyn, Steven Thijs, Dimitri Linten, Geert Van der Plas, Bertrand Parvais, Morin Dehan, Stefaan Decoutere, Charlotte Soens, Nadine Collaert, Malgorzata Jurczak:
Advanced Planar Bulk and Multigate CMOS Technology: Analog-Circuit Benchmarking up to mm-Wave Frequencies. ISSCC 2008: 528-529 - 2007
- [j4]Piet Wambacq, Bob Verbruggen, Karen Scheir, Jonathan Borremans, Morin Dehan, Dimitri Linten, Vincent De Heyn, Geert Van der Plas, Abdelkarim Mercha, Bertrand Parvais, Cedric Gustin, Vaidyanathan Subramanian, Nadine Collaert, Malgorzata Jurczak, Stefaan Decoutere:
The Potential of FinFETs for Analog and RF Circuit Applications. IEEE Trans. Circuits Syst. I Regul. Pap. 54-I(11): 2541-2551 (2007) - [c6]Jonathan Borremans, Piet Wambacq, Dimitri Linten:
An ESD-Protected DC-to-6GHz 9.7mW LNA in 90nm Digital CMOS. ISSCC 2007: 422-613 - 2006
- [j3]Steven Thijs, M. Natarajan Iyer, Dimitri Linten, Wutthinan Jeamsaksiri, T. Daenen, Robin Degraeve, Andries J. Scholten, Stefaan Decoutere, Guido Groeseneken:
Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions. Microelectron. Reliab. 46(5-6): 702-712 (2006) - 2005
- [j2]Dimitri Linten, Steven Thijs, Mahadeva Iyer Natarajan, Piet Wambacq, Wutthinan Jeamsaksiri, Javier Ramos, Abdelkarim Mercha, Snezana Jenei, Stéphane Donnay, Stefaan Decoutere:
A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS. IEEE J. Solid State Circuits 40(7): 1434-1442 (2005) - [j1]Dimitri Linten, Xiao Sun, Geert Carchon, Wutthinan Jeamsaksiri, Abdelkarim Mercha, Javier Ramos, Snezana Jenei, Piet Wambacq, Morin Dehan, Lars Aspemyr, Andries J. Scholten, Stefaan Decoutere, Stéphane Donnay, Walter De Raedt:
Low-power voltage-controlled oscillators in 90-nm CMOS using high-quality thin-film postprocessed inductors. IEEE J. Solid State Circuits 40(9): 1922-1931 (2005) - [c5]Philippe Jansen, Steven Thijs, Dimitri Linten, M. I. Natarajan, Vesselin K. Vassilev, Mingxu Liu, Ann Concannon, David Trémouilles, Takeshi Nakaie, Masanori Sawada, Vladislav A. Vashchenko, Marcel ter Beek, Takumi Hasebe, Stefaan Decoutere, Guido Groeseneken:
RF ESD protection strategies - the design and performance trade-off challenges. CICC 2005: 489-496 - [c4]Dimitri Linten, Xiao Sun, Steven Thijs, M. I. Natarajan, Abdelkarim Mercha, Geert Carchon, Piet Wambacq, Takeshi Nakaie, Stefaan Decoutere:
Low-power low-noise highly ESD robust LNA, and VCO design using above-IC inductors. CICC 2005: 497-500 - 2004
- [c3]Dimitri Linten, Xiao Sun, Geert Carchon, Wutthinan Jeamsaksiri, Abdelkarim Mercha, Javier Ramos, Snezana Jenei, Lars Aspemyr, Andries J. Scholten, Piet Wambacq, Stefaan Decoutere, Stéphane Donnay, Walter De Raedt:
A 328 μW 5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor. CICC 2004: 701-704 - [c2]Gerd Vandersteen, Rik Pintelon, Dimitri Linten, Stéphane Donnay:
Extended Subspace Identification of Improper Linear Systems. DATE 2004: 454-459 - [c1]Dimitri Linten, Steven Thijs, Mahadeva Iyer Natarajan, Piet Wambacq, Wutthinan Jeamsaksiri, Javier Ramos, Abdelkarim Mercha, Snezana Jenei, Stéphane Donnay, Stefaan Decoutere:
A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS. ESSCIRC 2004: 291-294
Coauthor Index
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