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ORCIDDavide Bisi
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2020 – today
- 2024
[c6]Marco Saro, Francesco de Pieri, Andrea Carlotto, Mirko Fornasier, Fabiana Rampazzo, Carlo De Santi
, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Davide Bisi, Matthew Guidry, Stacia Keller, Umesh K. Mishra:
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. IRPS 2024: 5- 2022
- [c5]Davide Bisi, Bill Cruse, Philip Zuk, Primit Parikh, Umesh K. Mishra, Tsutomu Hosoda, Masamichi Kamiyama, Masahito Kanamura:
Short-Circuit Capability with GaN HEMTs : Invited. IRPS 2022: 1-7
2010 – 2019
- 2016
- [j5]Gaudenzio Meneghesso, Matteo Meneghini, Davide Bisi, Isabella Rossetto, Tian-Li Wu, Marleen Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni:
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. Microelectron. Reliab. 58: 151-157 (2016) - 2015
- [j4]Davide Bisi, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Fabio Soci, Alessio Pantellini, Claudio Lanzieri, Piero Gamarra, Cedric Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, Davide De Salvador, Marco Bazzan, Gaudenzio Meneghesso, Enrico Zanoni:
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. Microelectron. Reliab. 55(9-10): 1662-1666 (2015) - [j3]Isabella Rossetto, Matteo Meneghini, Davide Bisi, Alessandro Barbato, Marleen Van Hove, Denis Marcon, Tian-Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni:
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs. Microelectron. Reliab. 55(9-10): 1692-1696 (2015) - [c4]Matteo Meneghini, Riccardo Silvestri, Stefano Dalcanale, Davide Bisi, Enrico Zanoni, Gaudenzio Meneghesso, Piet Vanmeerbeek, Abhishek Banerjee, Peter Moens:
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors. IRPS 2015: 2 - 2014
- [j2]Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni:
Proton induced trapping effect on space compatible GaN HEMTs. Microelectron. Reliab. 54(9-10): 2213-2216 (2014) - [c3]Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso:
Breakdown investigation in GaN-based MIS-HEMT devices. ESSDERC 2014: 377-380 - [c2]Davide Bisi, Antonio Stocco, Matteo Meneghini, Fabiana Rampazzo, Andrea Cester, Gaudenzio Meneghesso, Enrico Zanoni:
Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs. ESSDERC 2014: 389-392 - 2013
- [c1]Davide Bisi, Matteo Meneghini, Antonio Stocco, Giulia Cibin, Alessio Pantellini, Antonio Nanni, Claudio Lanzieri, Enrico Zanoni, Gaudenzio Meneghesso:
Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors. ESSDERC 2013: 61-64 - 2012
- [j1]Alessandro Chini, Fabio Soci, Fausto Fantini, Antonio Nanni, Alessio Pantellini, Claudio Lanzieri, Davide Bisi, Gaudenzio Meneghesso, Enrico Zanoni:
Field plate related reliability improvements in GaN-on-Si HEMTs. Microelectron. Reliab. 52(9-10): 2153-2158 (2012)
Coauthor Index
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