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ORCIDKalya Shubhakar
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2020 – today
- 2022
[c4]Kalya Shubhakar, Chee Huei Lee, Tee Hui Teo:
Enhanced Learning Experience for Remote Students in Hybrid Class Model using 360° View Camera and Telepresence Robot. TALE 2022: 744-748- 2020
- [c3]Laiqiang Luo, Kalya Shubhakar, Sen Mei, Nagarajan Raghavan, Fan Zhang, Danny Shum, Kin Leong Pey
:
Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device. IRPS 2020: 1-6
2010 – 2019
- 2019
- [c2]Kin Leong Pey, Alok Ranjan, Nagarajan Raghavan, Kalya Shubhakar, Sean J. O'Shea:
Dielectric Breakdown in 2D Layered Hexagonal Boron Nitride - The Knowns and the Unknowns. IRPS 2019: 1-12 - 2018
- [c1]Alok Ranjan, Nagarajan Raghavan, Sean J. O'Shea, Sen Mei, Michel Bosman, Kalya Shubhakar, Kin Leong Pey:
Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics. IRPS 2018: 4 - 2016
- [j6]Xuan Feng, Shurong Dong, Hei Wong, Danqun Yu, Kin Leong Pey, Kalya Shubhakar, W. S. Lau:
Effects of thermal annealing on the charge localization characteristics of HfO2/Au/HfO2 stack. Microelectron. Reliab. 61: 78-81 (2016) - [j5]Alok Ranjan, Nagarajan Raghavan, Joel Molina Reyes, Sean J. O'Shea, Kalya Shubhakar, Kin Leong Pey:
Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM. Microelectron. Reliab. 64: 172-178 (2016) - [j4]Kalya Shubhakar, Sen Mei, Michel Bosman, Nagarajan Raghavan, Alok Ranjan, Sean J. O'Shea, Kin Leong Pey:
Conductive filament formation at grain boundary locations in polycrystalline HfO2 -based MIM stacks: Computational and physical insight. Microelectron. Reliab. 64: 204-209 (2016) - 2015
- [j3]Kalya Shubhakar, Michel Bosman, O. A. Neucheva, Y. C. Loke, Nagarajan Raghavan, R. Thamankar, Alok Ranjan, Sean J. O'Shea, Kin Leong Pey:
An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis. Microelectron. Reliab. 55(9-10): 1450-1455 (2015) - 2014
- [j2]Nagarajan Raghavan, Kin Leong Pey, Kalya Shubhakar:
High-κ dielectric breakdown in nanoscale logic devices - Scientific insight and technology impact. Microelectron. Reliab. 54(5): 847-860 (2014) - [j1]Kalya Shubhakar, Nagarajan Raghavan, Sunil Singh Kushvaha, Michel Bosman, Zhongrui Wang, Sean J. O'Shea, Kin Leong Pey:
Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO2 on reliability of SiOx interfacial layer. Microelectron. Reliab. 54(9-10): 1712-1717 (2014)
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