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2020 – today
- 2022
[j3]Zong Jie Shen
, Chun Zhao, Lixing Kang, Yi Sun, Yina Liu, Ivona Z. Mitrovic, Li Yang, Eng Gee Lim, Zhongming Zeng, Cezhou Zhao:
Emerging Optical In-Memory Computing Sensor Synapses Based on Low-Dimensional Nanomaterials for Neuromorphic Networks. Adv. Intell. Syst. 4(9) (2022)- 2021
- [c26]Chun Zhao, Tian Shi Zhao, Zong Jie Shen, Yixin Cao, Yina Liu, Li Yang, Ivona Z. Mitrovic, Eng Gee Lim, Ce Zhou Zhao:
Research on Two-dimensional MXenes Based Synaptic Devices for the Future In-memory Computing. ASICON 2021: 1-4 - [c25]Yixin Cao, Chun Zhao, Yina Liu, Li Yang, Harm Van Zalinge, Cezhou Zhao:
Bioinspired mechano artificial synapse thin-film transistor. ICICDT 2021: 1-4 - [c24]Yuxiao Fang, W. Y. Xu, Ivona Z. Mitrovic, Li Yang, Chun Zhao, Cezhou Zhao:
An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment. ICICDT 2021: 1-4 - [c23]Qihan Liu, C. Z. Zhao, Y. Liu, Ivona Z. Mitrovic, Wangying Xu, Li Yang, Z. Wang, W. Wei, Y. Wu, X. Yu:
Water-induced Combustion-processed Metal-oxide Synaptic Transistor. ICICDT 2021: 1-4 - [c22]Zong Jie Shen, Chun Zhao, Ivona Z. Mitrovic, Cezhou Zhao, Yina Liu, Li Yang:
Resistive switching performance of memristor with solution-processed stacked MO/2D-materials switching layers. ICICDT 2021: 1-4 - [c21]Q. N. Wang, Chun Zhao, W. Liu, Harm Van Zalinge, Y. N. Liu, L. Yang, Cezhou Zhao:
All-solid-state Ion Doping Synaptic Transistor for Bionic Neural computing. ICICDT 2021: 1-4 - [c20]Chun Zhao, Tian Shi Zhao, Yixin Cao, Yina Liu, Li Yang, Ivona Z. Mitrovic, Eng Gee Lim, Ce Zhou Zhao:
Advanced synaptic transistor device towards AI application in hardware perspective. ICICDT 2021: 1-4 - [c19]Tian Shi Zhao, Chun Zhao, Yina Liu, Li Yang, Ivona Z. Mitrovic, Eng Gee Lim, Ce Zhou Zhao:
Solution-processed Synaptic Transistors Utilizing MXenes as Floating Gate. ICICDT 2021: 1-4 - [c18]Zong Jie Shen, Chun Zhao, Ka Lok Man, Yina Liu, Cezhou Zhao:
Long-Term Memory Performance with Learning Behavior of Artificial Synaptic Memristor Based on Stacked Solution-Processed Switching Layers. ISCAS 2021: 1-4 - [c17]Zong Jie Shen, Chun Zhao, Yina Liu, Li Yang, Cezhou Zhao:
Artificial synaptic behavior and its improvement of RRAM device with stacked solution-processed MXene layers. ISOCC 2021: 187-188 - 2020
- [j2]Yutao Cai, Yang Wang, Ye Liang, Yuanlei Zhang, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Cezhou Zhao:
Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices. IEEE Access 8: 95642-95649 (2020) - [c16]Tian Shi Zhao, Chun Zhao, Ivona Z. Mitrovic, Eng Gee Lim, Li Yang, Chenghu Qiu, Ce Zhou Zhao:
Facile Route for Low-temperature Eco-friendly Solution Processed ZnSnO Thin-film Transistors. IRPS 2020: 1-4 - [c15]Zong Jie Shen, Chun Zhao, Li Yang, Cezhou Zhao:
Bionic Sypantic Application of OxRRAM Devices. ISOCC 2020: 163-164
2010 – 2019
- 2019
- [j1]Miao Cui, Ruize Sun, Qinglei Bu, Wen Liu, Huiqing Wen, Ang Li, Yung C. Liang, Cezhou Zhao:
Monolithic GaN Half-Bridge Stages With Integrated Gate Drivers for High Temperature DC-DC Buck Converters. IEEE Access 7: 184375-184384 (2019) - [c14]Chun Zhao, Ce Zhou Zhao, Tian Shi Zhao:
Solution Processed Metal Oxide in Emerging Electronic Devices. ASICON 2019: 1-4 - [c13]Yung C. Liang, Ruize Sun, Yee-Chia Yeo, Cezhou Zhao:
Development of GaN Monolithic Integrated Circuits for Power Conversion. CICC 2019: 1-4 - [c12]Yutao Cai, Yang Wang, Miao Cui, Wen Liu, Huiqing Wen, Cezhou Zhao, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker:
Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices. ICICDT 2019: 1-5 - [c11]Miao Cui, Yutao Cai, Qinglei Bu, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker, Cezhou Zhao:
The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters. ICICDT 2019: 1-4 - [c10]Y. X. Fang, Tian Shi Zhao, Chun Zhao, C. Z. Zhao, Ivona Z. Mitrovic, Li Yang:
Enhanced Biased Radiation and Illumination Stress Stability of Solution-processed AlOx Dielectrics using Hydrogen Peroxide. ICICDT 2019: 1-3 - [c9]Qihan Liu, Chun Zhao, Cezhou Zhao, Ivona Z. Mitrovic, Stephen Hall, Wangying Xu, Li Yang, Eng Gee Lim, Q. N. Wang, Y. L. Wei, Yixin Cao:
Plasma-Enhanced Combustion-Processed Al2O3 Gate Oxide for In2O3 Thin Film Transistors. ICICDT 2019: 1-5 - [c8]Zong Jie Shen, Chun Zhao, C. Z. Zhao, Ivona Z. Mitrovic, Li Yang, Wangying Xu, Eng Gee Lim, T. Luo, Y. B. Huang:
Characteristics of Ni/AlOx/Pt RRAM devices with various dielectric fabrication temperatures. ICICDT 2019: 1-4 - [c7]Jian Fu Zhang, Zhigang Ji, Meng Duan, Wei Dong Zhang, Cezhou Zhao:
Voltage step stress: a technique for reducing test time of device ageing. ICICDT 2019: 1-4 - [c6]Tian Shi Zhao, Chun Zhao, C. Z. Zhao, Wangying Xu, Li Yang, Ivona Z. Mitrovic, Stephen Hall, Eng Gee Lim, S. C. Yu:
Solution Processed ZnSnO Thin-film Transistors with Peroxide- Aluminum Oxide Dielectric. ICICDT 2019: 1-4 - [c5]Zong Jie Shen, Ce Zhou Zhao, Li Yang, Chun Zhao:
Resistive Switching Behavior of Solution-Processed AlOx, based RRAM with Ni and TiN Top Electrode at Low Annealing Temperatures. ISOCC 2019: 182-183 - 2018
- [c4]Chun Zhao, Zong Jie Shen, Guang You Zhou, Ce Zhou Zhao, Li Yang, Ka Lok Man, Eng Gee Lim:
Neuromorphic Properties of Memristor towards Artificial Intelligence. ISOCC 2018: 172-173 - [c3]Chun Zhao, Guang You Zhou, Ce Zhou Zhao, Li Yang, Ka Lok Man, Eng Gee Lim:
Memristor-based Neuromorphic Implementations for Artificial Neural Networks. ISOCC 2018: 174-175 - 2011
- [c2]Chun Zhao, W. Zhang, C. Z. Zhao, Ka Lok Man, Taikyeong T. Jeong, J. K. Seon, Y. Lee:
Standard cell library establishment and simulation for scan D flip-flops based on 0.5 micron CMOS mixed-signal process. ISOCC 2011: 306-309 - [c1]Chun Zhao, W. Pan, C. Z. Zhao, Ka Lok Man, J. Choi, J. Chang:
Performance-effective compaction of standard cell library for edge-triggered latches utilizing 0.5 micron technology. ISOCC 2011: 313-316
Coauthor Index
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