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Hanzhi Xun

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2020 – today

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2024
[c12]
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Hanzhi Xun, Moritz Fieback, Sicong Yuan, Hassen Aziza, Mottaqiallah Taouil, Said Hamdioui:
Device-Aware Diagnosis for Yield Learning in RRAMs. DATE 2024: 1-6
[c11]
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Hanzhi Xun, Moritz Fieback, Mohammad Amin Yaldagard, Sicong Yuan, Hassen Aziza, Mottaqiallah Taouil, Said Hamdioui:
Online Detection of Unique Faults in RRAMs. ETS 2024: 1-2
[c10]
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Sicong Yuan, Mohammad Amin Yaldagard, Hanzhi Xun, Moritz Fieback, Erik Jan Marinissen, Woojin Kim, Siddharth Rao, Sebastien Couet, Mottaqiallah Taouil, Said Hamdioui:
Design-for-Test for Intermittent Faults in STT-MRAMs. ETS 2024: 1-6
[c9]
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Changhao Wang, Sicong Yuan, Hanzhi Xun, Chaobo Li, Mottaqiallah Taouil, Moritz Fieback, Danyang Chen, Xiuyan Li, Lin Wang, Riccardo Cantoro, Chujun Yin, Said Hamdioui:
Defects, Fault Modeling, and Test Development Framework for FeFETs. ITC 2024: 91-95
[c8]
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Sicong Yuan, Hanzhi Xun, Woojin Kim, Siddharth Rao, Erik Jan Marinissen, Sebastien Couet, Moritz Fieback, Mottaqiallah Taouil, Said Hamdioui:
Testing STT-MRAMs: Do We Need Magnets in our Automated Test Equipment? ITC 2024: 364-373
[c7]
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Hanzhi Xun, Moritz Fieback, Mohammad Amin Yaldagard, Sicong Yuan, Erbing Hua, Hassen Aziza, Mottaqiallah Taouil, Said Hamdioui:
Robust Design-for-Testability Scheme for Conventional and Unique Defects in RRAMs. ITC 2024: 374-383
[c6]
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  - conf/latw/AzizaPFHXTCR24
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Hassen Aziza, Jérémy Postel-Pellerin, Moritz Fieback, Said Hamdioui, Hanzhi Xun, Mottaqiallah Taouil, Karine Coulié, Wenceslas Rahajandraibe:
Analysis of Conductance Variability in RRAM for Accurate Neuromorphic Computing. LATS 2024: 1-5
2023
[c5]
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Hanzhi Xun, Moritz Fieback, Sicong Yuan, Hassen Aziza, Mathijs Heidekamp, Thiago Copetti, Letícia Maria Veiras Bolzani Poehls, Mottaqiallah Taouil, Said Hamdioui:
Characterization and Test of Intermittent Over RESET in RRAMs. ATS 2023: 1-6
[c4]
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Sicong Yuan, Mottaqiallah Taouil, Moritz Fieback, Hanzhi Xun, Erik Jan Marinissen, Gouri Sankar Kar, Sidharth Rao, Sebastien Couet, Said Hamdioui:
Device-Aware Test for Back-Hopping Defects in STT-MRAMs. DATE 2023: 1-6
[c3]
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Hanzhi Xun, Moritz Fieback, Sicong Yuan, Ziwei Zhang, Mottaqiallah Taouil, Said Hamdioui:
Data Background-Based Test Development for All Interconnect and Contact Defects in RRAMs. ETS 2023: 1-6
[c2]
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Sicong Yuan, Ziwei Zhang, Moritz Fieback, Hanzhi Xun, Erik Jan Marinissen, Gouri Sankar Kar, Sidharth Rao, Sebastien Couet, Mottaqiallah Taouil, Said Hamdioui:
Magnetic Coupling Based Test Development for Contact and Interconnect Defects in STT-MRAMs. ITC 2023: 236-245
[c1]
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Hanzhi Xun, Sicong Yuan, Moritz Fieback, Hassen Aziza, Mottaqiallah Taouil, Said Hamdioui:
Device-Aware Test for Ion Depletion Defects in RRAMs. ITC 2023: 246-255

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