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Wolfgang Gös
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2020 – today
- 2024
- [c16]Mario Bendra, Bernhard Pruckner, R. L. de Orio, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov:
Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling. DRC 2024: 1-2 - [c15]Mario Bendra, R. L. de Orio, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov:
Influence of Interface Exchange Coupling in Multilayered Spintronic Structures. MIPRO 2024: 1579-1583 - [c14]Bernhard Pruckner, Nils Petter Jørstad, T. Hadámek, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov:
Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect. MIPRO 2024: 1584-1589 - 2023
- [c13]Viktor Sverdlov, Mario Bendra, Bernhard Pruckner, Simone Fiorentini, Wolfgang Goes, Siegfried Selberherr:
Comprehensive Modeling of Advanced Composite Magnetoresistive Devices. ESSDERC 2023: 93-96 - [c12]Johannes Ender, Roberto Lacerda de Orio, Wolfgang Gös, Viktor Sverdlov:
Towards Efficient SOT-Assisted STT-MRAM Cell Switching Using Reinforcement Learning. LSSC 2023: 83-90 - [c11]Mario Bendra, Simone Fiorentini, Johannes Ender, R. L. de Orio, T. Hadámek, Nils Petter Jørstad, Bernhard Pruckner, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov:
Back-Hopping in Ultra-Scaled MRAM Cells. MIPRO 2023: 159-162 - 2022
- [c10]Simone Fiorentini, Mario Bendra, Johannes Ender, Roberto Lacerda de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov:
Spin Torques in ULTRA-Scaled MRAM Devices. ESSDERC 2022: 348-351 - [c9]Mario Bendra, Simone Fiorentini, Johannes Ender, R. L. de Orio, T. Hadámek, W. J. Loch, Nils Petter Jørstad, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov:
Spin Transfer Torques in Ultra-Scaled MRAM Cells. MIPRO 2022: 129-132 - 2021
- [c8]Wolfgang Goes, D. Green, Philippe Blaise, Giuseppe Piccolboni, Alessandro Bricalli, Amir Regev, Gabriel Molas, Jean-Francois Nodin:
A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification. IMW 2021: 1-4 - [c7]Mario Bendra, Johannes Ender, Simone Fiorentini, T. Hadámek, Roberto Lacerda de Orio, Wolfgang Goes, Viktor Sverdlov, Siegfried Selberherr:
Finite Element Method Approach to MRAM Modeling. MIPRO 2021: 70-73 - 2020
- [c6]Anastasiia Kruv, Ben Kaczer, Alexander Grill, Mario Gonzalez, Jacopo Franco, Dimitri Linten, Wolfgang Goes, Tibor Grasser, Ingrid De Wolf:
On the impact of mechanical stress on gate oxide trapping. IRPS 2020: 1-5
2010 – 2019
- 2019
- [c5]Roberto Lacerda de Orio, Alexander Makarov, Siegfried Selberherr, Wolfgang Goes, Johannes Ender, Simone Fiorentini, Viktor Sverdlov:
Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM. ESSDERC 2019: 146-149 - 2018
- [j4]Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Gerhard Rzepa, Markus Jech, Alexander L. Shluger, Tibor Grasser:
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence. Microelectron. Reliab. 87: 286-320 (2018) - 2015
- [c4]Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser:
The defect-centric perspective of device and circuit reliability - From individual defects to circuits. ESSDERC 2015: 218-225 - [c3]Tibor Grasser, M. Wahl, Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Alexander L. Shluger, Ben Kaczer:
On the volatility of oxide defects: Activation, deactivation, and transformation. IRPS 2015: 5 - [c2]Gerhard Rzepa, Wolfgang Goes, Ben Kaczer, Tibor Grasser:
Characterization and modeling of reliability issues in nanoscale devices. ISCAS 2015: 2445-2448 - 2014
- [c1]Tibor Grasser, Gerhard Rzepa, Michael Waltl, Wolfgang Goes, Karina Rott, Gunnar Andreas Rott, Hans Reisinger, Jacopo Franco, Ben Kaczer:
Characterization and modeling of charge trapping: From single defects to devices. ICICDT 2014: 1-4
2000 – 2009
- 2009
- [j3]Stanislav Tyaginov, Viktor Sverdlov, Ivan A. Starkov, Wolfgang Gös, Tibor Grasser:
Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate. Microelectron. Reliab. 49(9-11): 998-1002 (2009) - 2008
- [j2]Enzo Ungersboeck, Wolfgang Gös, Siddhartha Dhar, Hans Kosina, Siegfried Selberherr:
The effect of uniaxial stress on band structure and electron mobility of silicon. Math. Comput. Simul. 79(4): 1071-1077 (2008) - 2007
- [j1]Markus Karner, Andreas Gehring, M. Wagner, Robert Entner, Stefan Holzer, Wolfgang Goes, M. Vasicek, Tibor Grasser, Hans Kosina, Siegfried Selberherr:
VSP - A gate stack analyzer. Microelectron. Reliab. 47(4-5): 704-708 (2007)
Coauthor Index
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