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ORCIDJean-François Nodin
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2020 – today
- 2024
[j2]Henriette Padberg
, Amir Regev, Giuseppe Piccolboni, Alessandro Bricalli, Gabriel Molas, Jean-Francois Nodin, Shahar Kvatinsky:
Experimental Demonstration of Non-Stateful In-Memory Logic With 1T1R OxRAM Valence Change Mechanism Memristors. IEEE Trans. Circuits Syst. II Express Briefs 71(1): 395-399 (2024)- 2023
- [c10]Vivek Parmar, Sandeep Kaur Kingra, Deepak Verma, Digamber Pandey, Giuseppe Piccolboni, Alessandro Bricalli, Amir Regev, Gabriel Pares, Laurent Grenouillet, Jean-François Nodin, Manan Suri:
Demonstration of SMT-reflow Immune and SCA-resilient PUF on 28nm RRAM device array. IMW 2023: 1-4 - [c9]Lucas Reganaz, Damien Deleruyelle, Quentin Rafhay, Joel Minguet Lopez, Niccolo Castellani, Jean-François Nodin, Alessandro Bricalli, Giuseppe Piccolboni, Gabriel Molas, François Andrieu:
Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability. IRPS 2023: 1-6 - [i3]Henriette Padberg, Amir Regev, Giuseppe Piccolboni, Alessandro Bricalli, Gabriel Molas, Jean-François Nodin, Shahar Kvatinsky:
Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors. CoRR abs/2310.16843 (2023) - 2022
- [c8]Gabriel Molas, Giuseppe Piccolboni, Alessandro Bricalli, Anthonin Verdy, I. Naot, Y. Cohen, Amir Regev, I. Naveh, Damien Deleruyelle, Quentin Rafhay, Niccolo Castellani, Lucas Reganaz, Alain Persico, R. Segaud, Jean-François Nodin, Valentina Meli, S. Martin, François Andrieu, Laurent Grenouillet:
High temperature stability embedded ReRAM for 2x nm node and beyond. IMW 2022: 1-4 - [c7]Eduardo Esmanhotto, Tifenn Hirtzlin, Niccolo Castellani, S. Martin, Bastien Giraud, François Andrieu, Jean-François Nodin, Damien Querlioz, Jean-Michel Portal, Elisa Vianello:
Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations. IRPS 2022: 8-1 - [i2]Eduardo Esmanhotto, Tifenn Hirtzlin, Niccolo Castellani, S. Martin, Bastien Giraud, François Andrieu, Jean-Francois Nodin, Damien Querlioz, Jean-Michel Portal, Elisa Vianello:
Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations. CoRR abs/2203.01680 (2022) - [i1]Tyler Hennen, A. Elias, Jean-Francois Nodin, Gabriel Molas, Rainer Waser, Dirk J. Wouters, Daniel Bedau:
A High Throughput Generative Vector Autoregression Model for Stochastic Synapses. CoRR abs/2205.05053 (2022) - 2021
- [c6]Wolfgang Goes, D. Green, Philippe Blaise, Giuseppe Piccolboni, Alessandro Bricalli, Amir Regev, Gabriel Molas, Jean-Francois Nodin:
A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification. IMW 2021: 1-4 - 2020
- [c5]Amir Regev, Alessandro Bricalli, Giuseppe Piccolboni, Alexandre Valentian, Thomas Mesquida, Gabriel Molas, Jean-François Nodin:
Fully-Integrated Spiking Neural Network Using SiOx-Based RRAM as Synaptic Device. AICAS 2020: 145-148
2010 – 2019
- 2018
- [c4]Gilbert Sassine, Cecile Nail, Luc Tillie, Diego Alfaro Robayo, Alexandre Levisse, Carlo Cagli, Khalil El Hajjam, Jean-Francois Nodin, Elisa Vianello, Mathieu Bernard, Gabriel Molas, Etienne Nowak:
Sub-pJ consumption and short latency time in RRAM arrays for high endurance applications. IRPS 2018: 2-1 - 2013
- [c3]Boubacar Traore, Elisa Vianello, Gabriel Molas, Marc Gely, Jean-François Nodin, Eric Jalaguier, Philippe Blaise, Barbara De Salvo, Leonardo R. C. Fonseca, Kanhao Xue, Yoshio Nishi:
On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations. ESSDERC 2013: 170-173 - [c2]Elisa Vianello, Olivier Thomas, M. Harrand, Santhosh Onkaraiah, T. Cabout, Boubacar Traore, T. Diokh, Houcine Oucheikh, Luca Perniola, Gabriel Molas, Philippe Blaise, J.-F. Nodin, Eric Jalaguier, Barbara De Salvo:
Back-end 3D integration of HfO2-based RRAMs for low-voltage advanced IC digital design. ICICDT 2013: 235-238 - 2012
- [j1]Gabriele Navarro, Sarra Souiki, Alain Persico, Veronique Sousa, Jean-François Nodin, Carine Jahan, François Aussenac, Vincent Delaye, Olga Cueto, Luca Perniola, Barbara De Salvo:
High temperature reliability of μtrench Phase-Change Memory devices. Microelectron. Reliab. 52(9-10): 1928-1931 (2012) - [c1]Quentin Hubert, Carine Jahan, Alain Toffoli, Gabriele Navarro, S. Chandrashekar, Pierre Noe, Veronique Sousa, Luca Perniola, J.-F. Nodin, A. Persico, S. Maitrejean, A. Roule, E. Henaff, M. Tessaire, P. Zuliani, Roberto Annunziata, Gilles Reimbold, G. Pananakakis, Barbara De Salvo:
Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption. ESSDERC 2012: 286-289
Coauthor Index
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