"Long-time-constant leaky-integrating oxygen-vacancy drift-diffusion FET ..."

Hisashi Inoue et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185412

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type: Conference or Workshop Paper

metadata version: 2023-07-28

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Hisashi Inoue, Hiroto Tamura, Ai Kitoh, Xiangyu Chen, Zolboo Byambadorj, Takeaki Yajima, Yasushi Hotta, Tetsuya Iizuka, Gouhei Tanaka, Isao H. Inoue:
Long-time-constant leaky-integrating oxygen-vacancy drift-diffusion FET for human-interactive spiking reservoir computing. VLSI Technology and Circuits 2023: 1-2

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