"An E-mode p-GaN HEMT monolithically-integrated three-level gate driver ..."

Junichiro Nagao et al. (2021)

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DOI: 10.1587/ELEX.18.20210059

access: open

type: Journal Article

metadata version: 2022-02-03

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  - https://dblp.org/rec/journals/ieiceee/NagaoCLFDK21
Junichiro Nagao, Urmimala Chatterjee, Xiangdong Li, Jun Furuta, Stefaan Decoutere, Kazutoshi Kobayashi:
An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply. IEICE Electron. Express 18(6): 20210059 (2021)

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