"CAP-RAM: A Charge-Domain In-Memory Computing 6T-SRAM for Accurate and ..."

Zhiyu Chen et al. (2021)

> Home

Details and statistics

DOI: 10.1109/JSSC.2021.3056447

access: closed

type: Journal Article

metadata version: 2024-02-26

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/jssc/ChenYJHWLLWY21
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/jssc/ChenYJHWLLWY21
Zhiyu Chen, Zhanghao Yu, Qing Jin, Yan He, Jingyu Wang, Sheng Lin, Dai Li, Yanzhi Wang, Kaiyuan Yang:
CAP-RAM: A Charge-Domain In-Memory Computing 6T-SRAM for Accurate and Precision-Programmable CNN Inference. IEEE J. Solid State Circuits 56(6): 1924-1935 (2021)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.