"Demonstration of improvement of specific on-resistance versus breakdown ..."

Zhaozhao Xu et al. (2019)

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DOI: 10.1016/J.MEJO.2019.04.011

access: closed

type: Journal Article

metadata version: 2025-01-19

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Zhaozhao Xu, Donghua Liu, Jun Hu, Feng Jin, Xinjie Yang, Wenting Duan, Wei Yue, Ziquan Fang, Wensheng Qian, Weiran Kong, Shichang Zou:
Demonstration of improvement of specific on-resistance versus breakdown voltage tradeoff for low-voltage power LDMOS. Microelectron. J. 88: 29-36 (2019)

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