"Reliability and degradation mechanism of AlGaN/GaN HEMTs for next ..."

Maximilian Dammann et al. (2009)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2009.02.005

access: closed

type: Journal Article

metadata version: 2024-10-06

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/DammannPWBQMMAWMRBBRFS09
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/DammannPWBQMMAWMRBBRFS09
Maximilian Dammann, W. Pletschen, Patrick Waltereit, Wolfgang Bronner, Rüdiger Quay, Stefan Müller, Michael Mikulla, Oliver Ambacher, P. J. van der Wel, S. Murad, T. Rödle, R. Behtash, F. Bourgeois, K. Riepe, Martin Fagerlind, Einar Örn Sveinbjörnsson:
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. Microelectron. Reliab. 49(5): 474-477 (2009)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.