"Electromigration-induced failure in operando characterization of 3D ..."

Simon Gousseau et al. (2015)

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DOI: 10.1016/J.MICROREL.2015.05.019

access: closed

type: Journal Article

metadata version: 2020-02-22

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Simon Gousseau, Stéphane Moreau, David Bouchu, Alexis Farcy, Pierre Montmitonnet, Karim Inal, François Bay, Marc Zelsmann, Emmanuel Picard, Mathieu Salaün:
Electromigration-induced failure in operando characterization of 3D interconnects: microstructure influence. Microelectron. Reliab. 55(8): 1205-1213 (2015)

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