"Hot-carrier-induced degradation of drain current hysteresis and transients ..."

Joan Marc Rafí et al. (2006)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2006.07.037

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/RafiSHMCOC06
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/RafiSHMCOC06
Joan Marc Rafí, Eddy Simoen, Kiyoteru Hayama, Abdelkarim Mercha, Francesca Campabadal, Hidenori Ohyama, Cor Claeys:
Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs. Microelectron. Reliab. 46(9-11): 1657-1663 (2006)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.