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2020 – today
- 2024
[j7]Pengpeng Ren, Yongkang Xue, Linglin Jing, Lining Zhang, Runsheng Wang, Zhigang Ji:
A strong physical unclonable function with machine learning immunity for Internet of Things application. Sci. China Inf. Sci. 67(1) (2024)- [j6]Jinfeng Ye
, Pengpeng Ren, Yongkang Xue, Hui Fang, Zhigang Ji:
Fast Aging-Aware Timing Analysis Framework With Temporal-Spatial Graph Neural Network. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 43(6): 1862-1871 (2024) - [j5]Hai-Bao Chen, Xinjie Zhang, Wenjie Zhu, Jie Chen, Pengpeng Ren, Zhigang Ji, Junhua Liu, Runsheng Wang, Ru Huang:
DRGA-Based Second-Order Block Arnoldi Method for Model Order Reduction of MIMO RCS Circuits. IEEE Trans. Circuits Syst. I Regul. Pap. 71(5): 2410-2423 (2024) - [j4]Xiaolin Wang, Da Wang, Lei Guo, Pengpeng Ren, Zhigang Ji:
High-Throughput Addressable Test Structure Design for Nano-Scaled CMOS Device Characterization. IEEE Trans. Circuits Syst. II Express Briefs 71(9): 4041-4045 (2024) - [c18]Dinghao Chen, Wenjie Zhu, Xiaoman Yang, Pengpeng Ren, Zhigang Ji, Hai-Bao Chen:
Physics-Informed Learning for EPG-Based TDDB Assessment. ASPDAC 2024: 651-656 - [c17]Shuying Wang, Yewei Zhang, Yunjoong Kim, Pengpeng Ren, Zhigang Ji:
A Thermal Profile Prediction Methodology for Nanosheet Circuits Featuring Cross-Layer Thermal Coupling Effect. IRPS 2024: 1-6 - [c16]Shiyu Xia, Longda Zhou, Kewei Wang, Xiaobin Fan, Yongkang Xue, Qi Shan, Hannian Wang, Pengpeng Ren, Zhigang Ji, Ru Huang:
Convolution-Based Vth Shift Prediction and the New 9T2C Pixel Circuit in LTPS TFT AMOLED. IRPS 2024: 1-7 - [c15]Yongkang Xue, Miaojia Yuan, Yu Li, Da Wang, Maokun Wu, Pengpeng Ren, Lining Zhang, Runsheng Wang, Zhigang Ji, Ru Huang:
Investigation of Positive Bias Temperature Instability in advanced FinFET nodes. IRPS 2024: 1-5 - [c14]Longda Zhou, Jie Li, Pengpeng Ren, Sheng Ye, Da Wang, Zheng Qiao, Zhigang Ji:
Understanding the Physical Mechanism of RowPress at the Device-Level in Sub-20 nm DRAM. IRPS 2024: 1-6 - [c13]Da Wang, Yongkang Xue, Yong Liu, Pengpeng Ren, Zixuan Sun, Zirui Wang, Yueyang Liu, Zhijun Cheng, Haiyang Yang, Xiangli Liu, Blacksmith Wu, Kanyu Cao, Runsheng Wang, Zhigang Ji, Ru Huang:
Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin Identification. IRPS 2024: 9 - [c12]Zixuan Sun, Yongkang Xue, Haoran Lu, Pengpeng Ren, Zirui Wang, Zhigang Ji, Runsheng Wang, Ru Huang:
Investigation of Interplays between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETs. IRPS 2024: 72 - [c11]Yu Xiao, Chenyang Zhang, Da Wang, Yongkang Xue, Pengpeng Ren, Zhigang Ji:
A New Method of Automatic Extraction of RTN and OMI-Friendly Implementation. IRPS 2024: 75 - 2023
- [j3]Xiang Liu, Pengpeng Ren, Hai-Bao Chen, Zhigang Ji, Junhua Liu, Runsheng Wang, Jianfu Zhang, Ru Huang:
Equiprobability-Based Local Response Surface Method for High-Sigma Yield Estimation With Both High Accuracy and Efficiency. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42(4): 1346-1350 (2023) - [c10]Yishan Wu, Puyang Cai, Zhiwei Liu, Pengpeng Ren, Zhigang Ji:
Towards the understanding of ferroelectric-intrinsic variability and reliability issues on MCAM. IRPS 2023: 1-6 - [c9]Longda Zhou, Jie Li, Zheng Qiao, Pengpeng Ren, Zixuan Sun, Jianping Wang, Blacksmith Wu, Zhigang Ji, Runsheng Wang, Kanyu Cao, Ru Huang:
Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation. IRPS 2023: 1-10 - [c8]Zuoyuan Dong, Zixuan Sun, Xin Yang, Xiaomei Li, Yongkang Xue, Chen Luo, Puyang Cai, Zirui Wang, Shuying Wang, Yewei Zhang, Chaolun Wang, Pengpeng Ren, Zhigang Ji, Xing Wu, Runsheng Wang, Ru Huang:
Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c7]Pengpeng Ren, Xinfa Zhang, Junhua Liu, Runsheng Wang, Zhigang Ji, Ru Huang:
Towards the Characterization of Full ID-VG Degradation in Transistors for Future Analog Applications. IRPS 2022: 3 - [c6]Yong Liu, Pengpeng Ren, Da Wang, Longda Zhou, Zhigang Ji, Junhua Liu, Runsheng Wang, Ru Huang:
New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology. IRPS 2022: 6 - [c5]Da Wang, Yong Liu, Pengpeng Ren, Longda Zhou, Zhigang Ji, Junhua Liu, Runsheng Wang, Ru Huang:
Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies. IRPS 2022: 7 - 2021
- [j2]Chunyang Liu, Pengpeng Ren, Bo Zhou, Jianfu Zhang, Hui Fang, Zhigang Ji:
Investigation on the Implementation of Stateful Minority Logic for Future In-Memory Computing. IEEE Access 9: 168648-168655 (2021)
2010 – 2019
- 2018
- [j1]Shaofeng Guo, Runsheng Wang, Pengpeng Ren, Changze Liu, Mulong Luo, Xiaobo Jiang, Yangyuan Wang, Ru Huang:
Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits. Microelectron. Reliab. 81: 101-111 (2018) - [c4]Pengpeng Ren, Changze Liu, Sanping Wan, Jiayang Zhang, Zhuoqing Yu, Nie Liu, Yongsheng Sun, Runsheng Wang, Canhui Zhan, Zhenghao Gan, Waisum Wong, Yu Xia, Ru Huang:
New insights into the HCI degradation of pass-gate transistor in advanced FinFET technology. IRPS 2018: 3-1 - 2017
- [c3]Shaofeng Guo, Runsheng Wang, Zhuoqing Yu, Peng Hao, Pengpeng Ren, Yangyuan Wang, Siyu Liao, Chunyi Huang, Tianlei Guo, Alvin Chen, Jushan Xie, Ru Huang:
Towards reliability-aware circuit design in nanoscale FinFET technology: - New-generation aging model and circuit reliability simulator. ICCAD 2017: 780-785 - 2016
- [c2]Pengpeng Ren, Runsheng Wang, Ru Huang:
Layout dependent BTI and HCI degradation in nano CMOS technology: A new time-dependent LDE and impacts on circuit at end of life. ICICDT 2016: 1-3 - 2015
- [c1]Ketul B. Sutaria, Pengpeng Ren, Abinash Mohanty, Xixiang Feng, Runsheng Wang, Ru Huang, Yu Cao:
Duty cycle shift under static/dynamic aging in 28nm HK-MG technology. IRPS 2015: 7
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