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Eldad Bahat-Treidel

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2020 – today

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2023
[c4]
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  - conf/irps/FregolentMSBMZM23
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  - https://dblp.org/rec/conf/irps/FregolentMSBMZM23
Manuel Fregolent, Alberto Marcuzzi, Carlo De Santi, Eldad Bahat-Treidel, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques. IRPS 2023: 1-5
2021
[c3]
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  - conf/drc/HiltBTWW21
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Oliver Hilt, Frank Brunner, Eldad Bahat-Treidel, Mihaela Wolf, Joachim Würfl:
GaN-channel HEMTs with AlN buffer for high-voltage switching. DRC 2021: 1-2
2020
[c2]
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  - conf/drc/TreidelHCKGLW20
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Eldad Bahat-Treidel, Oliver Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, Joachim Würfl:
The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications. DRC 2020: 1-2

2010 – 2019

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2016
[j7]
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  - journals/mr/MeneghiniHFSCSP16
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Matteo Meneghini, Oliver Hilt, Clément Fleury, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni, Gaudenzio Meneghesso, Stefano Dalcanale:
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. Microelectron. Reliab. 58: 177-184 (2016)
[j6]
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Eldad Bahat-Treidel, Oliver Hilt, O. Bahat Treidel, Joachim Würfl:
Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs. Microelectron. Reliab. 64: 556-559 (2016)
2015
[c1]
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  - conf/essderc/CapriottiFBRLPS15
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Mattia Capriotti, Clément Fleury, Ole Bethge, Matteo Rigato, Suzanne Lancaster, Dionyz Pogany, Gottfried Strasser, Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl:
E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator. ESSDERC 2015: 60-63
2014
[j5]
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  - journals/mr/ChevtchenkoSBJF14
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Sergey A. Chevtchenko, Matthias Schulz, Eldad Bahat-Treidel, Wilfred John, Stephan Freyer, Paul Kurpas, Joachim Würfl:
Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors. Microelectron. Reliab. 54(9-10): 2191-2195 (2014)
2012
[j4]
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  - journals/mr/ZanandreaBRSMZHIWM12
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Alberto Zanandrea, Eldad Bahat-Treidel, Fabiana Rampazzo, Antonio Stocco, Matteo Meneghini, Enrico Zanoni, Oliver Hilt, Ponky Ivo, Joachim Würfl, Gaudenzio Meneghesso:
Single- and double-heterostructure GaN-HEMTs devices for power switching applications. Microelectron. Reliab. 52(9-10): 2426-2430 (2012)
2011
[j3]
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  - journals/mr/IvoGBLWBT11
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Ponky Ivo, Arkadiusz Glowacki, Eldad Bahat-Treidel, Richard Lossy, Joachim Würfl, Christian Boit, Günther Tränkle:
Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements. Microelectron. Reliab. 51(2): 217-223 (2011)
[j2]
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  - journals/mr/WuerflBBCHIKKLSSWZ11
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Joachim Würfl, Eldad Bahat-Treidel, Frank Brunner, E. Cho, Oliver Hilt, Ponky Ivo, A. Knauer, Paul Kurpas, Richard Lossy, Matthias Schulz, S. Singwald, Markus Weyers, Rimma Zhytnytska:
Reliability issues of GaN based high voltage power devices. Microelectron. Reliab. 51(9-11): 1710-1716 (2011)

2000 – 2009

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2009
[j1]
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  - journals/mr/GlowackiLBIBPLWT09
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Arkadiusz Glowacki, Piotr Laskowski, Christian Boit, Ponky Ivo, Eldad Bahat-Treidel, Reza Pazirandeh, Richard Lossy, Joachim Würfl, Günther Tränkle:
Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures. Microelectron. Reliab. 49(9-11): 1211-1215 (2009)

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