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Conferences > OFC > 2014 > Th1C > Th1C.4

Strain-induced enhancement of free-carrier effects in SiGe for optical modulator and VOA applications

Younghyun Kim, Mitsuru Takenaka, Takenori Osada, Masahiko Hata, and Shinichi Takagi

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Abstract

Enhanced free-carrier effects in strained SiGe enable high-efficiency VOA, exhibiting 1/3 of power consumption of Si. The broadband operation from 1.34 to 1.64 μm and error-free operation for 18-dBm 12.5 Gb/s optical signal are obtained.

© 2014 Optical Society of America

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