The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT

Minhan Mi; Yunlong He; Bin Hou; Meng Zhang; Zuochen Shi; Xiaohua Ma; Peixian Li; Yue Hao

doi:10.1587/elex.12.20150943

LETTER

The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT

Minhan Mi, Yunlong He, Bin Hou, Meng Zhang, Zuochen Shi, Xiaohua Ma, Peixian Li, Yue Hao

Author information

Minhan Mi
Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University
Yunlong He
Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University
Bin Hou
School of Advanced Materials and Nanotechnology, Xidian University
Meng Zhang
School of Advanced Materials and Nanotechnology, Xidian University
Zuochen Shi
Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University
Xiaohua Ma
School of Advanced Materials and Nanotechnology, Xidian University
Peixian Li
School of Advanced Materials and Nanotechnology, Xidian University
Yue Hao
Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University

Keywords: GaN MIS-HEMT, normally-off, interface trap state

JOURNAL FREE ACCESS

2015 Volume 12 Issue 24 Pages 20150943

DOI https://doi.org/10.1587/elex.12.20150943

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Abstract

In this letter, a normally-off AlGaN/GaN MIS-HEMT using fluorinated gate dielectric was presented. The fluorine ions were injected into the Al₂O₃ gate dielectric to obtain positive threshold voltage (V_th) as well as avoiding the plasma induced to the GaN channel layer. Moreover the maximum transconductance of fluorinated gate MIS-HEMT has been improved compared with the non-treated MIS-HEMT. Furthermore, the fluorine ions injected into the Al₂O₃ gate dielectric could decrease the trap states density (D_T) and time constant (τ_T) at the Al₂O₃/GaN interface. The normally-off MIS-HEMT showed a very high drain current of 507 mA/mm and V_th of 0.6 V.

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