IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Electronic Displays
Crystal Growth of Silicate Phosphors from the Vapor Phase
Tadashi ISHIGAKIKenji TODATatsuya SAKAMOTOKazuyoshi UEMATSUMineo SATO
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2011 Volume E94.C Issue 11 Pages 1745-1748

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Abstract
Well-crystallized Ba2SiO4: Eu2+ powders were grown on a substrate by the vapor phase reaction between a mixed powder (barium carbonate and europium oxide) and SiO gas. The vaporization of SiO occurs at 1400-1600°C from the SiO2 source (or SiO powder) in a reducing atmosphere. The formed SiO gas was transported by 95 vol% Ar - 5 vol% H2 gas and reacted with the raw material powders. The emission intensity of the Ba2SiO4: Eu2+ phosphor synthesized by the new vapor phase technique is about 2.6 times higher than that of a conventional solid-state reaction sample.
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© 2011 The Institute of Electronics, Information and Communication Engineers
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