Daniel M. Fleetwood (born August 3, 1958) is an American scientist, inventor, engineer and innovator. He is credited as being one of the first to identify the origins of flicker noise in semiconductor devices and its usefulness in understanding the effects of ionizing radiation on microelectronic devices and materials.
Daniel M. Fleetwood | |
|---|---|
 Dan Fleetwood in 2014 | |
| Born | August 3, 1958 Surprise, Indiana, U.S. |
| Citizenship | United States |
| Alma mater | Purdue University |
| Occupation(s) | Inventor, scientist, engineer, professor (Vanderbilt University) |
| Known for | Flicker noise Semiconductor device physics Radiation effects of semiconductor devices Soft error |
| Spouse | Betsy Fleetwood |
| Children | 3 |
| Parent(s) | Louis and Dorothy Fleetwood |
| Title | ICCF Grandmaster (2008)[1] |
| ICCF rating | 2556 (October 2021) |
| ICCF peak rating | 2597 (October 2013) |
Fleetwood is the Olin H. Landreth Chair of Electrical Engineering at Vanderbilt University in Nashville, Tennessee.[2] His research work focuses on the effects of ionizing radiation on microelectronic devices and materials, origins of 1/f noise in semiconductors and radiation hardness assurance.[3] In 1997 he received R&D 100 and IndustryWeek magazine awards for co-inventing a new type of computer memory chip based on mobile protons. The chip was recognized as Discover magazine's 1998 Invention of the Year in computer hardware and electronics.[4] In 2000 he was named one of the top 250 most highly cited researchers in engineering by the Institute for Scientific Information.[5] He is a Fellow of the Institute of Electrical and Electronics Engineers and American Physical Society, and a Grandmaster of International Correspondence Chess.[1]
Early life and education
editFleetwood was born on August 3, 1958, in Surprise, Indiana, to Louis and Dorothy Fleetwood. He graduated from Seymour High School (Indiana) in 1976. He took active interest in sports and was a member of the Seymour High School baseball team, pitching a perfect game in 1976.[6] He joined Department of Physics and Applied Mathematics in Purdue University as an undergraduate. He graduated from Purdue in 1984 with a PhD in physics. He received the 1984 Lark-Horovitz Award, Purdue University in recognition of demonstrated ability and exceptional promise in research in solid-state physics.[7]
Career
editSandia National Laboratories
editFleetwood joined Sandia National Laboratories, Albuquerque, New Mexico, in 1984. He was named a Distinguished Member of the technical staff in the Radiation Technology and Assurance Department in 1990. In 1997 he received R&D 100 and IndustryWeek magazine awards for co-invention of a new type of computer memory chip based on mobile protons in Silicon dioxide (protonic nonvolatile field effect transistor memory).[8] This chip was also recognized as Discover magazine's 1998 Invention of the Year in computer hardware and electronics. In 2000 he was named one of the top 250 most highly cited researchers in Engineering by the Institute for Scientific Information.[4]
Vanderbilt University
editIn 1999 Fleetwood left Sandia to accept the position of professor of electrical engineering at Vanderbilt University in Nashville, Tennessee. In 2000, he was also named a professor of physics, in 2001 he was appointed associate dean for Research of the Vanderbilt School of Engineering, and from June 2003 through June 2020 he was chair of the llElectrical engineering and computer science department.[2] He is associated with The Radiation Effects and Reliability Group at Vanderbilt which is the largest of its type at any US university.[9] and Institute for Space and Defense Electronics. His research interests are Effects of ionizing radiation on microelectronic devices and materials, Flicker noise in semiconductors, radiation hardness assurance test methods for mission-critical equipments, radiation effects modeling and simulation and novel microelectronic materials. Fleetwood is the author of more than 600 publications on radiation effects in microelectronics, defects in semiconductor devices, and low-frequency noise. These papers have been cited more than 26000 times (citation h factor = 89, per Google Scholar).[10] He was named an honorary professor of the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences in 2011.[3] He currently serves as Senior Editor, Radiation Effects, of the IEEE Transactions on Nuclear Science and Distinguished Lectures Chair of the IEEE Nuclear and Plasma Sciences Society.
Awards and honors
edit- Fellow, Institute of Electrical and Electronics Engineers, American Physical Society, and American Association for the Advancement of Science[11]
- Merit Award, IEEE Nuclear and Plasma Sciences Society, 2009[12]
- Distinguished Science Alumnus, Purdue University, 2007
- Discover magazine (1998), R&D Magazine R&D 100 (1997) and IndustryWeek magazine Technology of Year (1997) Awards
- More than 20 Outstanding/Meritorious Conference Paper Awards for IEEE Conferences
- Distinguished Member of the technical staff, Sandia National Laboratories, 1990–1999
- Lark-Horovitz Award, Purdue University, 1984
Other achievements
editFleetwood became the eighth US Correspondence Chess Grandmaster in 2008, beating Poland's SM Maciej Jedrzejowski. His chess talent was recognized when he captured the ACUI Midwest regional Collegiate Chess Championship in 1981 and then the United States Chess Federation's premier correspondence tournament, the 1993 Absolute Championship.[1] He is currently competing in the 33rd World Championship of the International Correspondence Chess Federation (ICCF).[13]
Personal life
editDaniel is married to Betsy Fleetwood and together they have three sons: Aaron，Zach and Nathan. The family lives in Brentwood, Tennessee.
References
edit- ^ a b c "The United States Chess Federation - Dan Fleetwood is USA's newest Correspondence GM". uschess.org. June 26, 2008. Archived from the original on April 15, 2014. Retrieved January 29, 2014.
- ^ a b "Daniel M. Fleetwood | School of Engineering | Vanderbilt University". engineering.vanderbilt.edu. Archived from the original on February 3, 2014. Retrieved January 29, 2014.
- ^ a b "Dan Fleetwood Home Page". eecs.vanderbilt.edu. Archived from the original on April 14, 2013. Retrieved January 29, 2014.
- ^ a b "Dan Fleetwood - Distinguished Alumnus 2007". physics.purdue.edu. Archived from the original on February 1, 2014. Retrieved January 29, 2014.
- ^ "Vanderbilt University - Research Analytics - Thomson Reuters". highlycited.com. Archived from the original on February 20, 2014. Retrieved January 29, 2014.
- ^ "Seymour Daily Tribune Newspaper Archives, May 18, 1976, p. 6". newspaperarchive.com. May 18, 1976. Archived from the original on March 25, 2018. Retrieved March 25, 2018.
- ^ "Purdue University Department of Physics - Awards to the Graduate Students". physics.purdue.edu. Archived from the original on February 1, 2014. Retrieved January 29, 2014.
- ^ "Sandia National Laboratories - News Releases: Protonic Computer Memory Remembers Information When Power Goes Off". sandia.gov. Archived from the original on October 19, 2020. Retrieved February 8, 2020.
- ^ "Radiation Effects and Reliability Group | Vanderbilt University". isde.vanderbilt.edu. Archived from the original on February 3, 2014. Retrieved January 29, 2014.
- ^ "Daniel M. Fleetwood - Google Scholar". scholar.google.com. Archived from the original on December 28, 2021. Retrieved August 17, 2018.
- ^ "Microelectronics master Dan Fleetwood named AAAS Fellow". engineering.vanderbilt.edu. Archived from the original on December 5, 2019. Retrieved February 8, 2020.
- ^ "Nuclear & Plasma Sciences Society | Past Recipients of the MERIT Award". ieee-npss.org. Archived from the original on March 31, 2018. Retrieved March 31, 2018.
- ^ "Cross Table".
External links
edit
- Daniel M. Fleetwood player details at ICCF
