1. Introduction
Water and air pollution represent significant challenges for all forms of life, exacerbated by industrial growth, rising energy demands, and rapid population expansion. In particular, the textile industry has seen an unprecedented surge in activity, contributing notably to water pollution. The waste products generated during the dyeing process of fabrics are frequently released into natural water bodies without adequate oversight regarding their impact on these vital resources, thereby negatively affecting the health of various organisms. Presently, it is estimated that approximately 70% of the water utilized in dyeing processes is discharged into aquatic ecosystems without any prior treatment, leading to the emergence of carcinogenic diseases and harmful mutagenic effects on both aquatic life and humans. [
1]. Additionally, dyes have low fixation on factory-made goods requesting higher concentration for better fixation, resulting in dye concentrations wastes in rivers exceeding 1500 mg/L. During dyeing processes, various toxic substances are emitted, including salts such as NaCl and Na
2SO
4, surfactants like phenols and amines, heavy metals found in dyes, chlorinated solvents, harmful anions such as sulfide, and various colored organic compounds [
2]. The by-products generated throughout these processes exhibit significant toxicity and possess low biodegradability. It is reported that only 45 to 47 percent of the dyes utilized are biodegradable [
3], with the remaining color primarily attributed to insoluble dyes, which further contributes to their low biodegradability. In order to address these problems, complex and costly water treatment techniques have been developed, such as filtration, electro flocculation, reverse osmosis, among others, with limited efficiency when applied on a large scale [
4,
5,
6]. Usual and new pollutant chemically stable species are difficult to treat with conventional methods, hence innovative, effective, environmentally friendly, and cost-effective processes are required to ensure a higher percentage of contaminant removal or degradation. In recent years, advanced oxidation processes (AOPs) have garnered significant attention due to their environmentally friendly approach to eliminating and degrading water pollutants. These processes generate reactive chemical species, primarily hydroxyl radicals (OH) and superoxide anions (O*
-), which interact with contaminants to form less harmful byproducts, including inorganic precipitates, carbon dioxide (CO
2), and water (H
2O). AOPs typically utilize heterogeneous photocatalysis with semiconductor oxides like titanium dioxide (TiO
2), zinc oxide (ZnO), tin dioxide (SnO
2), and tungsten trioxide (WO
3), among others. [
7,
8,
9,
10,
11,
12,
13]. Semiconductor oxides can be manufactured in thin film or powder form and can be processed by both physical and cost-effective chemical techniques, including sol-gel by dip coating or spinning, chemical bath, spray pyrolysis, among others [
14,
15,
16]. The sol-gel is an attractive and economical deposition chemical technique since it presents the advantage of a minimal equipment, easy handling, scalable to large surface areas, and has showed a high-quality performance as catalysts in photodegradation processes, that can be improved under the finding of optimal deposition conditions [
17].
The efficiency of the photodegradation process of contaminants using semiconductor oxides as catalysts depends on several parameters, such as adequate crystal structure, surface morphology, and chemical composition, and large effective surface area, which in turn are defined by the deposition conditions, such as solution composition, annealing temperature and film thickness [
18]. A detailed study of the effect of solution conditions can be crucial for manufacturing stable and efficient catalysts by low-cost processing. TiO
2 MB decoloration performance prevails over all others oxide semiconductors due to its chemical stability against photo corrosion under UV radiation, as occurs with other catalysts, as is the case of ZnO and SnO
2. This has stimulated different alternatives away to TiO
2. Suggested processing to enhance stability of ZnO and SnO
2, consider addition of dopants, composite formation, band gap engineering, and novel heterostructures [
19].
It is important to highlight that there is a scarcity of reports comparing the decoloration efficacy of various semiconductor oxides, including TiO2, ZnO, and SnO2, which have been deposited using a consistent and cost-effective method under identical temperature conditions. Research on the degradation of methylene blue (MB) utilizing these three semiconductors in thin film form, all produced under the same cost-effective sol-gel technique while varying the film thickness, is limited. Additionally, low-cost techniques are known for their energy efficiency when compared to more expensive vacuum-based methods. It is generally anticipated that TiO2 will consistently outperform the others, regardless of the deposition method used. This study evaluates the photocatalytic performance of SnO2, ZnO, and TiO2 in thin film configurations, deposited via the sol-gel technique, focusing on the decoloration of MB dye through both adsorption and degradation under UV light, with an emphasis on how film thickness influences these processes. Our objective was to identify the most effective oxide for maximizing MB degradation efficiency and to understand how the type of semiconductor oxide, its thickness, and physical characteristics impact the degradation of MB under controlled laboratory conditions that prioritize low energy consumption.
2. Experimental Procedure
2.1. Deposition by Immersion or Dip-Coating Method
The film deposition was carried out using the immersion or dip-coating method. One of the advantages of this technique is that it allows the use of various precursor solutions and is highly versatile for different types of substrates, making it adaptable to diverse processes and substrate sizes. Additionally, it is relatively easy to operate and cost-effective. The stages of dip-coating deposition were as follows:
Immersion: The substrate is dipped into a container containing the precursor solution. This process must be carried out at a controlled speed to achieve uniformity in the deposited film.
Dwell time: The substrate remains immersed in the solution for a certain period, where the interaction between the solution and the substrate occurs.
Extraction: Similar to the immersion process, controlled extraction speed is required. As the substrate is pulled out of the solution, a layer of the precursor solution is carried out, resulting in the deposition of the film. Excess solution is drained from the surface. This stage is critical as extraction conditions greatly influence the quality of the film.
Evaporation: As the substrate is extracted from the solution, the solvent components such as H2O and OH evaporate. The evaporation time of the solvent depends on its volatility and is affected by factors such as turbulence and variations in the atmosphere, such as relative humidity and dust, which can result in inhomogeneities throughout the film.
Final thermal treatment: The final stage involves subjecting the deposited film to a high-temperature drying process to remove residues and improve its physical properties [
20,
21,
22].
Figure 1 shows the different stages of the dip-coating deposit process.
2.2. Samples Preparation
Prior to the film deposition process, the substrates underwent a cleaning process. In this study, soda-lime glass substrates (CORNING, 25 mm × 75 mm) were used as the substrate material. The cleaning process involved the following steps: the substrates were immersed in a 2 % dilute solution of Extran (MERCK), followed by rinsing with deionized water and then with ethyl alcohol (EtOH). The substrates were dried using a flow of nitrogen gas (INFRA, industrial line) and finally heated in an oven at 150 °C for 5 minutes to remove any residual moisture. The preparation method for the different films is described below. ZnO thin films were deposited from a 0.6 M solution prepared as follows: 16.4 g of zinc acetate (Zn(CH3COO)2•2H2O, Sigma Aldrich, United State) were dissolved in a mix of monoethanolamine (MEA, NH2CH2CH2OH, Sigma Aldrich, United State) and methoxyethanol (CH3OCH2CH2OH, Sigma Aldrich, United State), stirred in darkness a period of one hour. SnO2 thin films were deposited from a 0.11 M solution prepared in the following way: 8.24 g of tin(II) acetate (Sn(CH3CO2)2, Sigma Aldrich, United State) were dissolved in a mix of monoethanolamine (MEA) and methoxyethanol, stirred in darkness a period of one hour. TiO2 thin films were deposited from a 0.17 M solution: 15 ml of titanium (IV) butoxide (Ti(OCH2CH2CH2CH3)4, Sigma Aldrich, United State) were dissolved in ethanol. A second solution with deionized water, ethanol and hydrochloric acid was added to the first solution. Total dissolution was obtained after stirring in darkness a period of one hour. Previously cleaned soda lime glass substrate was immersed and withdrawn into the corresponding solutions with a velocity of 7.12 and 1.43 mm/s, respectively. This process was carried out at room temperature. Further annealing treatment at 250 °C for 9 min of films for solvent removal was carried out.
In order to observe the thickness variation, different immersions or cycles were performed. For ZnO: 2, 6 and 10 cycles, for TiO2: 4, 7and 11 cycles and for SnO2: 6, 10 and 16 cycles. Finally, an annealing for 1 h at 450 °C was performed for all the films in order to guarantee a complete synthesis. The objective of a comparation of deposition of three catalyst under similar conditions, limits the upper annealing temperature in order to explore the performance of each material. This restriction is also based in the fact that cheap glass substrates start to soft at high temperature reported in this work, increasing the undesirable incorporation of alkaline elements into the semiconductor lattice affecting adversely the performance of the catalysts.
The samples were labeled as described in
Table 1.
2.3. Characterization
Film thickness measurements were performed measuring the steps made by chemical etching. For ZnO, TiO2 and SnO2 films, diluted solutions of 10 % HCl (37 %), 5 % HF and HCl (37 %) with zinc powder were used, respectively. Film thickness measurements were conducted using a Dektak XT BRUKER profilometer with a vertical resolution of 0.1 nm, and compared with micrographs obtained with SEM. The structural properties of thin films were investigated by X-ray diffraction (XRD) PANalytical X’Pert PRO 45 device using Cu-Kα1 (λ = 1.5418 Å) radiation, Bragg-Brentano (BB) mode with an angle ranging between 20 and 80°. The surface morphology was analyzed by SEM JEOL JSM-5900LV, with an accelerating voltage of 1 kV, magnification = 80 KX, aperture size = 20 µm, and WD = 3.6 mm. The samples did not undergo any additional process to obtain the image of their surface. The photocatalytic activities of the films were made by the degradation of MB (Tetramethyl thionine chloride, C16H18ClN3S•xH2O, Merck KGaA, Naucalpan, México), with a concentration of 1×10-5 M (pH ~ 9) dissolved in deionized water. 3 mL of 1×10−5 M (MB), was taken in a quartz cell (Hellma Analytics brand, 10 × 10 × 40 mm containing 3 mL of the MB solution), and a slice of film (10 × 9 mm2) was immersed. A total 6 cells were irradiated with a 15.0 W Phillips germicide lamp G15T8 inside a cylindrical reactor. The distance between the film and the UV lamp was fixed to 3 cm. The optical absorbance in the range of 400 to 900 nm, was continuously monitored with an UV–vis spectrophotometer Shimadzu brand model 2400PC at intervals of 30 min for 150 min. The residual concentration of MB was calculated at a wavelength of 667 nm, which corresponds to the maximum intensity of MB absorption.
4. Mechanism of Photodegradation
The degradation of MB dissolved in water is carried out through heterogeneous photocatalysis using semiconductor oxides as catalysts. The general mechanism of the photocatalytic process consists of several stages, which are described as follows [
42]:
Generation of electron-hole pairs: This step occurs when light with photons whose energy is equal to or greater than the bandgap of the semiconductor oxide (
hν ≥ EG) is incidenced on it. These photons are absorbed by the semiconductor oxide, exciting electrons in the conduction band
and leaving holes in the valence band
, thus generating electron-hole pairs:
Formation of reactive species: The generated electron-hole pairs migrate by diffusion to the surface of the semiconductor, leading to redox processes by charge transfer with absorbed species on the surface, in this case, molecules of the MB dye in water. The holes
react with water H
2O or hydroxide ions
to produce ionized species:
Meanwhile, the electrons
are captured by adsorbed oxygen molecules (O
2) to produce the superoxide radical anion:
Degradation of the dye: Both•OH and
react with the organic molecules of the MB dye in the aqueous medium, leading to its degradation, production of degradation intermediates, as described in equations 15 and 16.
Degradation products: During the dye degradation process, different intermediate products can be formed depending on various factors such as the catalyst used, pH of the medium, and other species or molecules present in the aqueous medium. In this stage, the conversion to less harmful molecules, mainly H
2O, CO
2 as well as minerals acids or inorganic acids containing hydrochloric, sulfuric and nitric acids among others. Almost all the elements that make up the organic contaminant, i.e., carbon, nitrogen, and sulfur, are converted into non-polluting organic species. This is due to the properties of the most important degrading species in the process, the •OH radical. After the formation of final products, they are distributed in the aqueous medium through diffusion. From the above, it can be said that to achieve higher efficiency in MB degradation, it is required to have: 1) Higher production of electron-hole pairs, which can be achieved by doping the semiconductor oxide with donor or acceptor atoms, and 2) Longer lifetime of photogenerated electron-hole pairs in their respective bands, i.e., electrons in the conduction band and holes in the valence band. To prolong the lifetime of charge carriers in their respective bands, a semiconductor with good crystalline quality is required [
43], as semiconductors with poor crystalline quality will contain more structural defects with energy levels near the center of the bandgap, which trap and retain charge carriers for longer, preventing them from reaching their respective bands, diffusing, and subsequently forming reactive species necessary for MB degradation [
44,
45] This is illustrated in
Figure 10.
Figure 12.
Shows semiconductor with different crystalline quality: (a) a semiconductor with good crystalline quality, containing few structural defects and few energy levels within the band gap, and (b) a semiconductor with poor crystalline quality, containing more structural defects and therefore more energy levels within the band gap. The conduction band (CB), valence band (VB) and trap energy level (Et) are also labeled.
Figure 12.
Shows semiconductor with different crystalline quality: (a) a semiconductor with good crystalline quality, containing few structural defects and few energy levels within the band gap, and (b) a semiconductor with poor crystalline quality, containing more structural defects and therefore more energy levels within the band gap. The conduction band (CB), valence band (VB) and trap energy level (Et) are also labeled.
Semiconductors with good crystalline quality have fewer defects and therefore fewer energy levels close to the center of the band gap. Additionally, having large grains on the film surface results in fewer dangling bonds. These two conditions allow more photo-generated charge carriers to reach their respective bands and participate in the photodegradation process, as fewer charge carriers are trapped and retained in structural defects. Comparing the physical properties of the three deposited films, it can be concluded that the films made of ZnO have the best structural properties. This is because their lattice constants are close to the volume values, they have larger crystal grain sizes (D), as shown in
Table 2, and the majority of their crystal planes are oriented towards a preferred direction or a higher texture coefficient (TC), as shown in
Table 3. The morphological properties of the ZnO films also consist of large grains, although they are formed by the coalescence of smaller grains, as seen in
Figure 4 (e-f). Therefore, the ZnO films are the most efficient in the degradation of MB. On the other hand, the TiO
2 films are the least efficient in the degradation of MB, as they have the poorest structural properties, being even amorphous, with the smallest grain sizes compared to the other semiconductor oxide films. From our results, it can be concluded that having poor crystalline quality favors less grain growth and therefore more dangling bonds on the film surface.
In the literature, TiO
2 stands out as the most promising solution for addressing water contamination, thanks to its cost-effectiveness, lack of toxicity, and enduring stability. This semiconductor has direct or indirect forbidden energy bands. Zhang et al. [
46] demonstrate that TiO
2 in its anatase phase has an indirect forbidden energy band, which means that the lifetime of photo-generated carriers is longer due to phonon-assisted recombination, promoting maximum efficiency in the photocatalytic evolution of MB. Electron mobility is higher in the case of the anatase phase due to its lower effective electron mass. ZnO is the second most studied semiconductor oxide for its application as a photocatalyst, similar to TiO
2. However, ZnO is very economical and environmentally friendly. This semiconductor oxide is usually synthesized in wurtzite hexagonal form. SnO
2 is another semiconductor oxide that combines high optical transmittance and electrical conductivity suitable for application as a photocatalyst; this semiconductor grows in rutile phase. SnO
2 has the highest forbidden band width value from 3.6 to 3.8 eV. These three semiconductor oxides have large forbidden band widths above 3.2 eV, therefore, only the UV light range from solar radiation, corresponding to 3 % of the total sunlight, will be utilized. Another important parameter for dye degradation is the exciton binding energy, which indicates the time that electron-hole pairs last before recombining and thereby more efficiently affecting light-induced chemical reactions in a photocatalytic material. In this case, TiO
2, having the largest exciton binding energy value, is the most suitable for degrading a dye.
Although, as we have observed with the deposition conditions used in this study, the ZnO film exhibits the best physical properties, followed by SnO
2. In the case of TiO
2 its physical characteristics are not as good as we would like; in fact, this semiconductor turned out to be amorphous. In
Table 7, we present some volume physical characteristics of the 3 semiconductor oxides analyzed in this study.
Starting from optical transmittance measurements and using equation 17 (Lambert-Beer’s law), the absorbance value is obtained for some films and presented in
Figure 11.
It is confirmed that all films have higher absorbance, which further enhances the photocatalytic process, the band gaps are 3.23, 3.25 and 3.24 for ZnO, SnO2 and TiO2 films, respectively.
Figure 13.
The absorbance for SnO2, ZnO and TiO2 films.
Figure 13.
The absorbance for SnO2, ZnO and TiO2 films.
6. Conclusions
Films of SnO2, ZnO, and TiO2 were successfully fabricated utilizing the dip coating technique and subsequently assessed for their photocatalytic potential. Specifically, the SnO2 films displayed a rutile tetragonal structure, while the ZnO films exhibited a wurtzite crystalline structure. The preferred growth planes identified were the (110) and (002) planes for SnO2 and ZnO, respectively. Among these, the ZnO films demonstrated superior structural attributes, as their lattice constants closely aligned with the volume values, the crystal grain size (D) was the largest, and they possessed a greater number of crystal planes oriented towards a specific crystallographic direction, resulting in a higher texture coefficient (TC) and a reduced density of dislocations (δ). Furthermore, the ZnO films presented larger grains in their surface morphology. Collectively, these characteristics contribute to a reduction in defects within both the volume and surface of the film, leading to fewer energy levels near the center of the band gap, which enhances the ability to trap and retain charge carriers for extended periods. The degradation of MB is contingent upon the generation rate of carriers and their longevity within their respective bands, thereby rendering the ZnO films the most effective for MB degradation. Raman spectroscopy was employed to verify the presence of TiO2 material. A correlation was noted between the structural properties and surface morphology; specifically, films with high crystalline quality, such as the ZnO films, exhibited greater grain growth in a preferred crystallographic direction, whereas films with lower crystalline quality, like the TiO2 films, showed minimal or no grain growth. The efficiency of MB degradation diminishes with a decrease in film thickness, attributed to the lower structural quality of thinner films, and for reused films, this reduction is due to the degradation of the film caused by the dye.